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    • 1. 发明申请
    • TRENCH ISOLATION STRUCTURE AND METHOD OF MANUFACTURE
    • TRENCH隔离结构和制造方法
    • WO2008144631A1
    • 2008-11-27
    • PCT/US2008/064087
    • 2008-05-19
    • TEXAS INSTRUMENTS INCORPORATEDSRIDHAR, SeetharamanHALL, Craig
    • SRIDHAR, SeetharamanHALL, Craig
    • H01L21/768
    • H01L21/823878H01L21/76232
    • The disclosure provides a trench isolation structure, a semiconductor device, and a method for manufacturing a semiconductor device. The semiconductor device (100), in one embodiment, includes a substrate (105) having a first device region (120) and a second device region (160), wherein the first device region includes a first gate structure (125) and first source/drain regions (150) and the second device region includes a second gate structure (165) and second source/drain regions (190). The semiconductor device further includes a trench isolation structure (110) configured to isolate the first device region from the second device region, the trench isolation structure comprising: 1) an isolation trench located within the substrate, wherein the isolation trench includes an opening portion and a bulbous portion, and further wherein a maximum width of the opening portion is less than a maximum width of the bulbous portion, and 2) dielectric material substantially filling the isolation trench.
    • 本公开提供了沟槽隔离结构,半导体器件以及半导体器件的制造方法。 在一个实施例中,半导体器件(100)包括具有第一器件区域(120)和第二器件区域(160)的衬底(105),其中第一器件区域包括第一栅极结构(125)和第一源极 漏极区域(150),第二器件区域包括第二栅极结构(165)和第二源极/漏极区域(190)。 所述半导体器件还包括被配置为将所述第一器件区域与所述第二器件区隔离的沟槽隔离结构(110),所述沟槽隔离结构包括:1)位于所述衬底内的隔离沟槽,其中所述隔离沟槽包括开口部分和 球根部分,并且其中所述开口部分的最大宽度小于所述球形部分的最大宽度,以及2)绝缘材料基本上填充所述隔离沟槽。