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1. 发明申请

WO1998005066A2 METHODS AND APPARATUS FOR THE IN-PROCESS DETECTION AND MEASUREMENT OF THIN FILM LAYERS 审中-公开
标题翻译：薄膜层的过程检测和测量方法和装置
公开(公告)号：WO1998005066A2
公开(公告)日：1998-02-05
申请号：PCT/US1997013373
申请日：1997-07-23
申请人： SPEEDFAM CORPORATION
发明人： SPEEDFAM CORPORATION , HOLZAPFEL, Paul , ALLEN, Robert, F. , LIN, Warren , SCHLUETER, James , KARLSRUD, Chris
IPC分类号： H01L21/66
CPC分类号： G01B11/0625 , B24B37/013 , B24B49/00 , H01L22/12 , H01L22/26
摘要： The present invention provides methods and apparatus which permits in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a work piece, e.g., a semiconductor wafer. A probe (500) disposed proximate to the outer perimeter of a polishing pad (126) on a CMP table, such that the probe establishes optical contact with the wafer surface (304) as a portion of the wafer extends beyond the outer perimeter (330) of the polishing pad (126). A nozzle (312) may be provided to apply a stream of compressed air at the disk surface under inspection to thereby remove excess slurry from the local region of the workpiece being inspected. A broad band light source (322) is employed in conjunction with a fiber optic cable (318) to direct light at the wafer surface. A bifurcated probe is employed such that the light applied to the workpiece surface is reflected back to and captured by a corresponding optical sensor connected to a fiber optic cable (320). The captured reflected light received by the receptor sensor and fiber optic cable assembly is applied to a photospectrum meter (324) which analyzes the reflected light. An output signal from the photospectrum meter is transmitted to a processor (326) which includes a smart algorithm configured to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.
摘要翻译：本发明提供方法和装置，其允许在工件中，即时地，基本上实时地测量工件（例如半导体晶片）的表面层的实际厚度。设置在CMP台上靠近抛光垫（126）的外周边的探针（500），使得当晶片的一部分延伸超过外周（330）时，探针与晶片表面（304）建立光学接触）抛光垫（126）。可以设置喷嘴（312）以在被检查的盘表面处施加压缩空气流，从而从被检查的工件的局部区域移除多余的浆料。与光纤电缆（318）结合使用宽带光源（322）以引导晶片表面的光。采用分叉探针，使得施加到工件表面的光被反射回并连接到光纤电缆（320）的对应的光学传感器捕获。由受体传感器和光纤电缆组件接收的捕获的反射光被施加到分析反射光的光谱仪（324）。来自光谱仪的输出信号被传送到处理器（326），处理器（326）包括配置成计算表面层厚度的智能算法。或者，半导体层的反射特性可能会影响反射信号的性质; 可以检测反射信号的变化，以指示何时从氧化物层去除金属层。

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