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1. 发明申请

WO2009051745A8 CONSTANT FORCE MECHANICAL SCRIBERS AND METHODS FOR USING SAME IN SEMICONDUCTOR PROCESSING APPLICATIONS 审中-公开
公开(公告)号：WO2009051745A8
公开(公告)日：2009-04-23
申请号：PCT/US2008/011800
申请日：2008-10-16
申请人： SOLYNDRA, INC. , MILSHTEIN, Erel , SHENDEROVICH, Alex , DJUROVIC, Boris , LIU, Daniel , CHANG, Wen , BULLER, Benyamin
发明人： MILSHTEIN, Erel , SHENDEROVICH, Alex , DJUROVIC, Boris , LIU, Daniel , CHANG, Wen , BULLER, Benyamin
IPC分类号： B28D5/00 , B28D1/22
摘要： A scribing system comprising a mounting mechanism, stylus, and force generating mechanism is provided. The mounting mechanism is configured to rotate an elongated object in such a manner that the object is subjected to a bow effect wherein a middle portion of the object bends relative to the end portions of the object. The stylus is for scribing the object at a position X along the long dimension of the object while the mounting mechanism rotates the object. The force generating mechanism is connected to the stylus so that the stylus applies the same constant force to the elongated object regardless of the position x along the long dimension of the object that the stylus is positioned, while the mounting mechanism rotates the object and thereby subjects the object to the bow effect, thereby scribing the object.

2. 发明申请

WO2004072734A2 TRANSMISSION MASK WITH DIFFERENTIAL ATTENUATION TO IMPROVE ISO-DENSE PROXIMITY 审中-公开
标题翻译：具有差异衰减的传输面板，以提高ISO感光度接近
公开(公告)号：WO2004072734A2
公开(公告)日：2004-08-26
申请号：PCT/EP2004/001216
申请日：2004-02-10
申请人： INFINEON TECHNOLOGIES AG , UNITED MICROELECTRONICS CO: , LIN, Benjamin , LIU, Daniel , SCHMIDT, Sebastian
发明人： LIN, Benjamin , LIU, Daniel , SCHMIDT, Sebastian
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/50 , G03F7/70283
摘要： An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
摘要翻译：一种用于补偿光刻工艺中图案成像中的邻近效应的装置，系统和方法。通过具有对应于预定图案的透光开口的曝光掩模，以预定图案实现光致抗蚀剂层的曝光。曝光掩模具有由透光开口和由透光开口稀疏地填充的区域密集地区域。光通过密集居住的透光开口被衰减不同于通过疏散人口的透光开口的量。

3. 发明申请

WO2011062605A1 METHOD OF HIGH DENSITY FIELD INDUCED MRAM PROCESS 审中-公开
标题翻译：高密度场诱导MRAM方法
公开(公告)号：WO2011062605A1
公开(公告)日：2011-05-26
申请号：PCT/US2010/002923
申请日：2010-11-08
申请人： MAGIC TECHNOLOGIES, INC. , ZHONG, Tom , KAN, Wai-Ming, Johnson , LIU, Daniel , ZHONG, Adam , TORNG, Chyr-Jiuh
发明人： ZHONG, Tom , KAN, Wai-Ming, Johnson , LIU, Daniel , ZHONG, Adam , TORNG, Chyr-Jiuh
IPC分类号： H01L29/82
CPC分类号： H01L21/76807 , H01L21/76816 , H01L27/228
摘要： Described herein are novel, cost effective and scalable methods for integrating a CMOS level with a memory cell level forming a field induced MRAM device. The memory portion of the device includes N parallel word lines overlaid by M parallel bit lines orthogonal to the word lines and individual patterned memory cells formed on previously patterned electrodes at the NxM intersections of the two sets of lines. The memory portion is integrated with a CMOS level and the connection between levels is facilitated by the formation of interconnecting vias between the NxM electrodes and corresponding pads in the CMOS level and by word line connection pads in the memory device level and corresponding metal pads in the CMOS level.
摘要翻译：这里描述了用于将CMOS电平与形成场感应MRAM器件的存储器单元级集成的新颖的，成本有效的和可扩展的方法。器件的存储器部分包括由与两条线的NxM交点处的与字线正交的M个并行位线和形成在先前图案化电极上的各个图案化存储单元重叠的N个并行字线。存储器部分与CMOS电平集成，并且通过在CMOS电平中的NxM电极和相应焊盘之间的互连通孔以及存储器件级中的字线连接焊盘和相应的金属焊盘中形成互连通孔来促进电平之间的连接 CMOS电平。

4. 发明申请

WO2010051010A1 A HIGH DENSITY SPIN-TRANSFER TORQUE MRAM PROCESS 审中-公开
标题翻译：高密度转子扭矩MRAM工艺
公开(公告)号：WO2010051010A1
公开(公告)日：2010-05-06
申请号：PCT/US2009/005646
申请日：2009-10-16
申请人： MAGIC TECHNOLOGIES, INC. , ZHONG, Tom , TORNG, Chiu-Jiuh , XIAO, Rongfu , ZHONG, Adam , KAN, Wai-Ming, Johnson , LIU, Daniel
发明人： ZHONG, Tom , TORNG, Chiu-Jiuh , XIAO, Rongfu , ZHONG, Adam , KAN, Wai-Ming, Johnson , LIU, Daniel
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , H01L43/12
摘要： A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.
摘要翻译：公开了一种STT-MRAM集成方案，其中通过在CMOS着陆焊盘，接触和覆盖VAC的金属（VAM）焊盘上形成中间通孔接触（VAC）来简化MTJ和CMOS金属之间的连接，以及MTJ 在VAM上执行双镶嵌工艺，通过设备区域中的VAC / VAM / MTJ堆叠将BIT线金属连接到CMOS着陆焊盘，并通过设备区域外的BIT连接通孔将BIT线连接焊盘连接到CMOS连接焊盘。 VAM焊盘是由Ta，TaN或用作扩散阻挡层的其他导体制成的单层或复合材料，具有用于MTJ形成的高度光滑的表面，并且在化学机械抛光工艺期间提供优异的再填充介电材料的选择性。每个VAC的厚度为500至3000埃，以最小化额外的电路电阻并最小化蚀刻负担。

5. 发明申请

WO2007142645A1 EXTENDED READ RANGE RFID SYSTEM 审中-公开
标题翻译：扩展阅读范围RFID系统
公开(公告)号：WO2007142645A1
公开(公告)日：2007-12-13
申请号：PCT/US2006/022263
申请日：2006-06-08
申请人： ASYST TECHNOLOGIES, INC. , SHARMA, Arun , FRITSCHEN, Dan , LIU, Daniel , RILEY, Norma
发明人： SHARMA, Arun , FRITSCHEN, Dan , LIU, Daniel , RILEY, Norma
IPC分类号： G06K7/08
CPC分类号： G06K7/10178 , G06K7/10336
摘要： The present invention generally comprises an apparatus that allows an RPID antenna to obtain information from an RFID tag mounted on a container. The apparatus reproduces the RF field generated by the antenna to a location proximate to the RFID tag. In one embodiment, the apparatus comprises a pickup device and a reproduction device electrically coupled with the pickup device. In another embodiment, the apparatus comprises at least one magnetic rod, which creates a magnetic path for the RF field to travel between the antenna and the RFID tag. In another embodiment, the apparatus comprises a pickup antenna and a reproduction antenna for transmitting the RF signal from the antenna proximate to the RFID tag.
摘要翻译：本发明通常包括允许RPID天线从安装在容器上的RFID标签获取信息的装置。该装置将由天线产生的RF场再现到靠近RFID标签的位置。在一个实施例中，该装置包括拾取装置和与拾取装置电耦合的再现装置。在另一个实施例中，该装置包括至少一个磁棒，其产生用于RF场在天线和RFID标签之间行进的磁路。在另一个实施例中，该装置包括拾取天线和用于从靠近RFID标签的天线发送RF信号的再现天线。

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