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    • 1. 发明申请
    • IMPROVED NON-PLANAR INTERFACE CONSTRUCTION
    • 改进的非平面接口结构
    • WO2011022372A2
    • 2011-02-24
    • PCT/US2010/045726
    • 2010-08-17
    • SMITH INTERNATIONAL, INC.EYRE, Ronald, K.VORONIN, Georgiy
    • EYRE, Ronald, K.VORONIN, Georgiy
    • E21B10/56E21B10/573B22F7/06
    • E21B10/5673
    • A cutting element is provided, including a substrate and an ultra-hard material layer formed over the substrate. At one end of the substrate is an interface surface that interfaces with the ultra- hard material layer to bond the layer to the substrate. The interface surface includes a first or outer annular section that extends to the peripheral edge of the substrate, and a second or inner section that is radially inside the first section. The interface surface includes several spaced-apart projections arranged in an annular row. In one aspect, each projection has an upper surface that defines a groove bisecting the projection. In another aspect, the interface surface may include a bridge coupling adjacent projections.
    • 提供了一种切割元件,其包括基底和在基底上形成的超硬材料层。 在基板的一端是界面表面,该界面表面与超硬材料层交界以将该层结合到基板。 界面表面包括延伸到衬底的周边边缘的第一或外部环形部分以及径向位于第一部分内部的第二或内部部分。 界面表面包括以环形排排列的几个间隔开的凸起。 在一个方面,每个突起具有限定将所述突起二等分的凹槽的上表面。 在另一方面,界面表面可以包括连接相邻突起的桥。
    • 5. 发明申请
    • METHOD FOR FORMING A POLYCRYSTALLINE LAYER OF ULTRA HARD MATERIAL
    • 形成超硬材料多晶层的方法
    • WO1997009174A1
    • 1997-03-13
    • PCT/US1996014476
    • 1996-09-09
    • SMITH INTERNATIONAL, INC.
    • SMITH INTERNATIONAL, INC.ANDERSON, Nathan, R.EYRE, Ronald, K.KESHAVAN, Madapusi, K.RAI, Ghanshyam
    • B32B31/20
    • B24D18/0009B24D3/06B24D3/28Y10S76/11Y10S76/12Y10T156/1067Y10T156/1075
    • A polycrystalline diamond layer (27) is bonded to a cemented metal carbide substrate (21) by this process. A layer of dense high shear compaction material (27) including diamond or cubic boron nitride particles is placed adjacent to a metal carbide substrate (21). The particles of diamond have become rounded instead of angular due to high shear compaction in a multiple roller process. The volatiles in the high shear compaction material are removed and binder decomposed at high temperature, for example, 950 DEG C, leaving residual amorphous carbon or graphite in a layer of ultra hard material particles on the carbide substrate. The substrate and layer assembly is then subjected to a high pressure, high temperature process, thereby sintering the ultra hard particles to each other to form a polycrystalline ultra hard layer (27) bonded to the metal carbide substrate (21). The layer of high shear compaction material is also characterized by a particle size distribution including larger and smaller particles that are distributed uniformly throughout the layer.
    • 通过该工艺将多晶金刚石层(27)结合到胶结金属碳化物基体(21)上。 将包括金刚石或立方氮化硼颗粒的致密高剪切压实材料(27)放置在与金属碳化物基体(21)相邻的位置。 由于多辊工艺中的高剪切压实,金刚石颗粒已经变圆而不是角度。 除去高剪切压实材料中的挥发物,并在高温下(例如950℃)分解粘结剂,在碳化物基体上留下残留的无定形碳或石墨的超硬材料颗粒层。 然后将基板和层组件进行高压高温处理,从而将超硬颗粒相互烧结,形成结合到金属碳化物基体(21)上的多晶超硬层(27)。 高剪切压实材料层的特征还在于粒度分布包括均匀分布在整个层中的越来越小的颗粒。