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1. 发明申请

WO2004021398A2 WAFER-LEVEL SEAL FOR NON-SILICON-BASED DEVICES 审中-公开
标题翻译：用于非硅基器件的晶片级封装
公开(公告)号：WO2004021398A2
公开(公告)日：2004-03-11
申请号：PCT/US2003/018103
申请日：2003-06-09
申请人： SILICON LIGHT MACHINES, INC.
发明人： MILLER, Gregory, D. , BRUNER, Mike , RAGAN, Lawrence, H. , GREEN, Gary, W.
IPC分类号： H01L
CPC分类号： B81C1/00293 , B81C2203/0136 , H03H3/08 , H03H9/02921 , H03H9/02984 , H03H9/1092
摘要： One embodiment disclosed relates to a method (100) for sealing an active area of a non-silicon-based device on a wafer. The method includes providing (104) a sacrificial material over at least the active area of the non-silicon-based device, depositing (108) a seal coating over the wafer so that the seal coating covers the sacrificial material, and replacing (112, 114) the sacrificial material with a target atmosphere. Another embodiment disclosed relates to an SAW device sealed at the wafer level (i.e. prior to separation of the die from the wafer). The device includes an active area to be protected, an electrical contact area (4), and a lithographically-formed structure (24) sealing at least the active area and leaving at least a portion of the electrical contact area (4) exposed.
摘要翻译：所公开的一个实施例涉及用于密封晶片上的非硅基器件的有源区的方法（100）。该方法包括在非硅基器件的至少有源区域上方提供（104）牺牲材料，在晶片上沉积（108）密封涂层，使得密封涂层覆盖牺牲材料， 114）具有目标气氛的牺牲材料。所公开的另一个实施例涉及一种在晶片级密封的SAW器件（即在晶片与晶片分离之前）。该装置包括待保护的有源区域，电接触区域（4）以及至少密封有源区域并使电接触区域（4）的至少一部分暴露的光刻成形结构（24）。 / p>

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