专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2004084300A1 ELECTRICAL CONNECTIONS IN SUBSTRATES 审中-公开
标题翻译：基板电气连接
公开(公告)号：WO2004084300A1
公开(公告)日：2004-09-30
申请号：PCT/SE2004/000439
申请日：2004-03-22
申请人： SILEX MICROSYSTEMS AB , KÄLVESTEN, Edvard , EBEFORS, Thorbjörn , SVEDIN, Niklas , RANGSTEN, Pelle , HUHTAOJA, Tommy
发明人： KÄLVESTEN, Edvard , EBEFORS, Thorbjörn , SVEDIN, Niklas , RANGSTEN, Pelle , HUHTAOJA, Tommy
IPC分类号： H01L21/768
CPC分类号： B81B7/0006 , H01L21/76898 , H01L23/481 , H01L2224/05573 , H01L2224/13025 , H01L2224/131 , H01L2924/00014 , H01L2924/1461 , H01L2924/014 , H01L2924/00 , H01L2224/05599
摘要： The invention relates to a method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate. It comprising creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of said substrate, defined by said trench. It also relates to a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, comprising a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through said substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and comprises the same material as the substrate, i.e. it is made from the wafer material.
摘要翻译：本发明涉及一种在导电或半导体衬底的第一（顶部）和第二（底部）表面之间形成电连接的方法。其包括在第一表面中形成沟槽，并且建立绝缘外壳，其将由所述沟槽限定的所述衬底的一部分完全分离。它还涉及可用作制造微电子和/或微机械装置的起始衬底的产品，其包括半导体或导电材料的平坦衬底，并且具有第一表面和第二表面，并且至少一个导电构件延伸穿过所述衬底。导电构件通过绝缘材料的有限层与平坦基板的周围材料绝缘，并且包括与基板相同的材料，即由晶片材料制成。

2. 发明申请

WO2003034016A1 PRESSURE SENSOR 审中-公开
标题翻译：压力传感器
公开(公告)号：WO2003034016A1
公开(公告)日：2003-04-24
申请号：PCT/SE2002/001884
申请日：2002-10-15
申请人： SILEX MICROSYSTEMS AB , RANGSTEN, Pelle , KÄLVESTEN, Edvard , MECHBACH, Marianne
发明人： RANGSTEN, Pelle , KÄLVESTEN, Edvard , MECHBACH, Marianne
IPC分类号： G01L9/00
CPC分类号： G01L9/0042 , G01L9/0055 , Y10T29/49002 , Y10T29/49004 , Y10T29/49007
摘要： In manufacturing a pressure sensor a recess that will form part of the sensor cavity is formed in a lower silicon substrate. An SOI-wafer having a monocrystalline silicon layer on top of a substrate is bonded to the lower silicon substrate closing the recess and forming the cavity. The supporting substrate of the SOI-wafer is then etched away, the portion of the monocrystalline layer located above the recess forming the sensor diaphragm. The oxide layer of the SOI-wafer here acts as an "ideal" etch stop in the case where the substrate wafer is removed by dry (plasma) or wet etching using e.g. KOH. This is due to high etch selectivity between silicon and oxide for some etch processes and it results in a diaphragm having a very accurately defined and uniform thickness.The cavity is evacuated by forming a opening to the cavity and then sealing the cavity by closing the opening using LPCVD. Sensor paths for sensing the deflection of the diaphragm are applied on the outer or inner surface of the diaphragm. The monocrystalline diphragm gives the sensor a good long-term stability. Also the sensor path can be made of monocrystalline material, this giving the sensor even better good long-term characteristics. An increased sensitivity can be obtained by making active portions of the sensor paths freely extending, unsupported by other material of the pressure sensor, by suitable etching procedures.
摘要翻译：在制造压力传感器时，形成传感器腔的一部分的凹部形成在下硅衬底中。在衬底顶部具有单晶硅层的SOI晶片被接合到下硅衬底上，封闭凹部并形成空腔。然后蚀刻掉SOI晶片的支撑衬底，单晶层的部分位于形成传感器膜片的凹部之上。 SOI晶片的氧化物层在此通过干式（等离子体）或湿式蚀刻方式除去基板晶片的情况下，作为“理想的”蚀刻停止。 KOH。这是由于在一些蚀刻工艺中硅和氧化物之间的高蚀刻选择性，并且其导致具有非常精确限定和均匀厚度的膜片。通过形成到空腔的开口然后通过闭合开口来密封空腔来抽空空腔使用LPCVD。用于感测隔膜偏转的传感器路径被施加在隔膜的外表面或内表面上。单晶diphragm给传感器良好的长期稳定性。此外，传感器路径也可以由单晶材料制成，这给传感器带来更好的长期特性。传感器路径的有效部分通过适当的蚀刻程序自由延伸，不受压力传感器的其他材料支撑，可以获得增加的灵敏度。

3. 发明申请

WO2010047648A1 PRESSURE RELIEF VALVE 审中-公开
标题翻译：压力减压阀
公开(公告)号：WO2010047648A1
公开(公告)日：2010-04-29
申请号：PCT/SE2009/051181
申请日：2009-10-19
申请人： NANOSPACE AB , GRÖNLAND, Tor-Arne , RANGSTEN, Pelle , JONSSON, Kerstin , BEJHED, Johan
发明人： GRÖNLAND, Tor-Arne , RANGSTEN, Pelle , JONSSON, Kerstin , BEJHED, Johan
IPC分类号： B81B7/00 , F16K15/14 , F16K17/28
CPC分类号： F16K99/0001 , F16K99/0057 , F16K2099/008 , Y10T137/1812 , Y10T137/7842 , Y10T137/8122 , Y10T137/87507 , Y10T137/87555
摘要： A micromechanical pressure relief valve arrangement (10) comprises a stack of wafers (13). An active pressure relief valve (20) is realized within the stack of wafers (13). A passive pressure relief valve (30) is also realized within said stack of wafers (13), arranged in parallel to the active pressure relief valve (20). A check valve (50), also realized within the stack of wafers (13), is arranged in series with both the active pressure relief valve (20) and the passive pressure relief valve (30).
摘要翻译：微机械压力释放阀装置（10）包括一叠晶片（13）。在晶片堆叠（13）内实现主动减压阀（20）。在所述堆叠的晶片（13）内还实现被动的压力释放阀（30），其平行于主动减压阀（20）布置。在晶片堆叠（13）内实现的止回阀（50）与主动减压阀（20）和被动式压力释放阀（30）同时布置。

4. 发明申请

WO2008030176A1 SUBSTRATE-PENETRATING ELECTRICAL CONNECTIONS 审中-公开
标题翻译：基板电气连接
公开(公告)号：WO2008030176A1
公开(公告)日：2008-03-13
申请号：PCT/SE2007/050617
申请日：2007-09-04
申请人： NANOSPACE AB , RANGSTEN, Pelle , JOHANSSON, Håkan , BEJHED, Johan
发明人： RANGSTEN, Pelle , JOHANSSON, Håkan , BEJHED, Johan
IPC分类号： H05K3/36 , H01L23/48 , H01R12/34
CPC分类号： B82Y15/00 , B64G1/1078 , B64G1/26 , B64G1/401 , B81B7/0006 , B81B2207/092 , B81B2207/096 , F02K9/62 , F02K9/80 , F05D2250/82 , F05D2250/84 , Y10T29/49083 , Y10T29/49099 , Y10T29/49155 , Y10T29/49346 , Y10T29/49718 , Y10T29/49746
摘要： A wafer assembly (30) comprises a substrate (71), in turn comprising a wafer (70) or a stack of wafers. The wafer assembly (30) further comprises an electrical connection (32) arranged through at least a part of the substrate (71). The electrical connection (32) is made by low-resistance silicon. The electrical connection (32) is positioned in a hole (84) penetrating at least a part of the substrate (71). A surface (78) of the substrate (71) confining the hole (84) is electrically insulating. The electrical connection (32) has at least one protrusion (75), which protrudes transversally to a main extension (83) of the hole (84) and the protrusion (75) protrudes outside a minimum hole diameter (85), as projected in the main extension (83) of the hole (84). Preferably, the protrusion (75) is supported by a support surface (81) of the substrate (71). A manufacturing method is also disclosed.
摘要翻译：晶片组件（30）包括基板（71），其又包括晶片（70）或晶片堆叠。晶片组件（30）还包括布置成穿过衬底（71）的至少一部分的电连接（32）。电连接（32）由低电阻硅制成。电连接（32）位于贯穿基板（71）的至少一部分的孔（84）中。限制孔（84）的基板（71）的表面（78）是电绝缘的。电连接（32）具有至少一个突出部（75），该突起横向突出到孔（84）的主延伸部（83），并且突起（75）突出到最小孔直径（85）的外侧，如投影在孔（84）的主延伸部（83）。优选地，突起（75）由衬底（71）的支撑表面（81）支撑。还公开了一种制造方法。

5. 发明申请

WO2008030175A1 NOZZLE ARRANGEMENT FOR USE IN A GAS THRUSTER, GAS THRUSTER, METHOD FOR MANUFACTURING A NOZZLE ARRANGEMENT, METHOD FOR IN-SITU REPAIRING OF A NOZZLE ARRANGEMENT AND A METHOD FOR OPERATING A GAS THRUSTERS 审中-公开
标题翻译：用于燃气喷射器的喷嘴装置，气体压路机，制造喷嘴装置的方法，用于现场修理喷嘴装置的方法和操作气体喷射器的方法
公开(公告)号：WO2008030175A1
公开(公告)日：2008-03-13
申请号：PCT/SE2007/050615
申请日：2007-09-04
申请人： NANOSPACE AB , GRÖNLAND, Tor-Arne , RANGSTEN, Pelle , JOHANSSON, Håkan , BEJHED, Johan
发明人： GRÖNLAND, Tor-Arne , RANGSTEN, Pelle , JOHANSSON, Håkan , BEJHED, Johan
IPC分类号： F02K9/62 , B64G1/40 , F03H5/00
CPC分类号： B82Y15/00 , B64G1/1078 , B64G1/26 , B64G1/401 , B81B7/0006 , B81B2207/092 , B81B2207/096 , F02K9/62 , F02K9/80 , F05D2250/82 , F05D2250/84 , Y10T29/49083 , Y10T29/49099 , Y10T29/49155 , Y10T29/49346 , Y10T29/49718 , Y10T29/49746
摘要： A nozzle arrangement for use in a gas thruster is presented. At least one heater micro structure (20) is arranged in a stagnation chamber (12) of the gas thruster. The heater microstructure (20) comprises a core of silicon or a silicon compound coated by a surface metal or metal compound coating. The heater microstructure (20) is manufactured in silicon or a silicon compound and covered by a surface metal coating. The heater microstructure (20) is mounted in the stagnation chamber (12) before or after the coverage of the surface metal or metal compound coating. The coverage is performed by heating the heater microstructure and flowing a gas comprising low quantities of a metal compound. The compound decomposes at the heated heater microstructure (20), forming the surface metal or metal compound coating. The same principles of coating can be used for repairing the heater microstructure (20) in situ. The driving gas comprises preferably a compound exhibiting an exothermic reaction when coming into contact with a catalytically active material. If the gas is exposed to heater microstructures being covered with the catalytically active material, the gas is further heated by the catalytic reaction.
摘要翻译：提出了一种用于气体推进器的喷嘴装置。至少一个加热器微结构（20）布置在气体推进器的停滞室（12）中。加热器微结构（20）包括由核或硅化合物涂覆的表面金属或金属化合物涂层。加热器微结构（20）由硅或硅化合物制成并被表面金属涂层覆盖。加热器微结构（20）在表面金属或金属化合物涂层的覆盖之前或之后安装在停滞室（12）中。通过加热加热器微结构并流动包含少量金属化合物的气体来进行覆盖。该化合物在加热的加热器微结构（20）处分解，形成表面金属或金属化合物涂层。相同的涂层原理可用于原位修复加热器微结构（20）。当与催化活性材料接触时，驱动气体优选包含表现出放热反应的化合物。如果气体暴露于被催化活性材料覆盖的加热器微结构，则气体被催化反应进一步加热。

6. 发明申请

WO2007040455A1 A HIGH PRESSURE ISOLATION VALVE SYSTEM 审中-公开
标题翻译：高压隔离阀系统
公开(公告)号：WO2007040455A1
公开(公告)日：2007-04-12
申请号：PCT/SE2006/050375
申请日：2006-10-04
申请人： NANOSPACE AB , STENMARK, Lars , RANGSTEN, Pelle
发明人： STENMARK, Lars , RANGSTEN, Pelle
IPC分类号： F16K31/02 , F16K13/00 , F16K7/12 , G01L9/12 , B64G1/40
CPC分类号： F16K17/383 , B64G1/402 , F16K17/403 , F16K99/0038 , Y10T137/0497 , Y10T137/1639 , Y10T137/1774 , Y10T137/8122 , Y10T137/8326
摘要： An isolation valve system comprises a main body (32), an actuator body (34) and a sealing membrane (307). The sealing membrane (307) is arranged at a high pressure portion (36) of the isolation valve system. The sealing membrane (307) mechanically attaches the actuator body (34) to the main body (32). The sealing membrane (307) further seals the high pressure portion (36) from a low pressure portion (38). A burst plug (315) is arranged against the main body (32) and supports the actuator body (34). An activation arrangement (50) is arranged for allowing an at least partial displacement of the burst plug (315), typically causing a phase transition. The sealing membrane (307) is dimensioned to break when the actuator body (34) is moved due to the displacement of the burst plug (315). The isolation valve system comprises preferably a stack (30) of substrates (301- 304) being bonded together. The substrates (301-304) have micromechanical structures, which form at least the actuator body (34) and the sealing membrane (307).
摘要翻译：隔离阀系统包括主体（32），致动器主体（34）和密封膜（307）。密封膜（307）布置在隔离阀系统的高压部分（36）处。密封膜（307）将致动器主体（34）机械地附接到主体（32）。密封膜（307）进一步将高压部分（36）与低压部分（38）密封。爆破塞（315）抵靠主体（32）设置并支撑致动器主体（34）。激活装置（50）被布置成允许突发塞（315）的至少部分移位，通常导致相变。当致动器主体（34）由于爆裂塞（315）的位移而移动时，密封膜（307）的尺寸被设计成断裂。隔离阀系统优选地包括结合在一起的衬底（301-304）的堆叠（30）。基板（301-304）具有至少形成致动器主体（34）和密封膜（307）的微机械结构。

7. 发明申请

WO2009029023A1 FIRE SAFETY VALVE 审中-公开
标题翻译：消防安全阀
公开(公告)号：WO2009029023A1
公开(公告)日：2009-03-05
申请号：PCT/SE2008/050928
申请日：2008-08-18
申请人： NANOSPACE AB , RANGSTEN, Pelle , BEJHED, Johan , BJÖRKLUND, Maria , GRÖNLAND, Tor-Arne , JOHANSSON, Håkan , JONSSON, Kerstin
发明人： RANGSTEN, Pelle , BEJHED, Johan , BJÖRKLUND, Maria , GRÖNLAND, Tor-Arne , JOHANSSON, Håkan , JONSSON, Kerstin
IPC分类号： F16K17/38 , F17C13/06
CPC分类号： F16K17/383 , F17C13/06 , F17C2201/0119 , F17C2201/032 , F17C2201/052 , F17C2201/054 , F17C2203/0617 , F17C2203/0648 , F17C2203/0656 , F17C2205/0305 , F17C2205/0317 , F17C2209/221 , F17C2221/014 , F17C2223/0123 , F17C2223/036 , F17C2260/017 , F17C2260/021 , F17C2260/042 , F17C2260/044 , F17C2270/05
摘要： A high-pressure fire safety valve (1) comprises a disc (10) that is capable of mechanically withstanding a high-pressure difference. The disc (10) has a multitude of holes (12) penetrating through the disc (10). Each of the holes (12) has a smallest diameter (d) of less than 100 micrometer. The high- pressure fire safety valve ( 1) further comprises a sealing substance (20) in a solid phase, sealing each of the holes (12). The sealing substance (20) exhibits a phase transition into a fluid state at elevated temperatures. This configuration results in that the multitude of holes (12) constitute straight evacuation channels for the high pressure when the sealing substance (20) has performed said phase transition. A high-pressure gas container comprising such a high-pressure fire safety valve and a manufacturing method for such a high-pressure fire safety valve are also disclosed.
摘要翻译：高压消防安全阀（1）包括能够机械地承受高压差的盘（10）。盘（10）具有贯穿盘（10）的多个孔（12）。每个孔（12）具有小于100微米的最小直径（d）。高压消防安全阀（1）还包括固相的密封物质（20），密封每个孔（12）。密封物质（20）在升高的温度下呈现相变为流体状态。这种结构导致当密封物质（20）进行所述相变时，多个孔（12）构成用于高压的直排空通道。还公开了一种包括这种高压消防安全阀的高压气体容器和这种高压消防安全阀的制造方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式