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1. 发明申请

WO2005066793A3 NON-VOLATILE MEMORY AND METHOD WITH NON-SEQUENTIAL UPDATE BLOCK MANAGEMENT 审中-公开
标题翻译：非易失性存储器和非顺序更新块管理方法
公开(公告)号：WO2005066793A3
公开(公告)日：2006-06-15
申请号：PCT/US2004043762
申请日：2004-12-21
申请人： SANDISK CORP , SINCLAIR ALAN WELSH , GOROBETS SERGEY ANATOLIEVICH , BENNETT ALAN DAVID , SMITH PETER JOHN
发明人： SINCLAIR ALAN WELSH , GOROBETS SERGEY ANATOLIEVICH , BENNETT ALAN DAVID , SMITH PETER JOHN
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7202
摘要： In a nonvolatile memory with block management system that supports update blocks with non-sequential logical units, an index of the logical units in a non-sequential update block is buffered in RAM and stored periodically into the non-volatile memory. In one embodiment, the index is stored in a block dedicated for storing indices. In another embodiment, the index is stored in the update block itself. In yet another embodiment, the index is stored in the header of each logical unit. In another aspect, the logical units written after the last index update but before the next have their indexing information stored in the header of each logical unit. In this way, after a power outage, the location of recently written logical units can be determined without having to perform a scanning during initialization. In yet another aspect, a block is managed as partially sequential and partially non-sequential, directed to more than one logical subgroup.
摘要翻译：在具有支持具有非顺序逻辑单元的更新块的块管理系统的非易失性存储器中，非顺序更新块中的逻辑单元的索引被缓冲在RAM中并被周期性地存储到非易失性存储器中。在一个实施例中，索引被存储在专用于存储索引的块中。在另一个实施例中，索引被存储在更新块本身中。在另一个实施例中，索引被存储在每个逻辑单元的标题中。在另一方面，在最后一个索引更新之后但在下一个之前写入的逻辑单元将其索引信息存储在每个逻辑单元的标题中。以这种方式，在断电之后，可以确定最近写入的逻辑单元的位置，而不必在初始化期间执行扫描。在另一方面，块被部署顺序地且部分地非顺序地管理，定向到多于一个的逻辑子组。

2. 发明申请

WO2005066792A3 NON-VOLATILE MEMORY AND METHOD WITH MEMORY PLANES ALIGNMENT 审中-公开
标题翻译：非易失性存储器和方法与存储器平面对齐
公开(公告)号：WO2005066792A3
公开(公告)日：2006-02-09
申请号：PCT/US2004043377
申请日：2004-12-21
申请人： SANDISK CORP , GOROBETS SERGEY ANATOLIEVICH , SMITH PETER JOHN , BENNETT ALAN DAVID
发明人： GOROBETS SERGEY ANATOLIEVICH , SMITH PETER JOHN , BENNETT ALAN DAVID
IPC分类号： G06F12/02 , G11C11/56 , G11C16/10
CPC分类号： G11C16/105 , G06F12/0246 , G06F2212/7202 , G06F2212/7208 , G11C11/5628 , G11C16/102
摘要： A non-volatile memory is constituted from a set of memory planes, each having its own set of read/write circuits so that the memory planes can operate in parallel. The memory is further organized into erasable blocks, each for storing a logical group of logical units of data. In updating a logical unit, all versions of a logical unit are maintained in the same plane as the original. Preferably, all versions of a logical unit are aligned within a plane so that they are all serviced by the same set of sensing circuits. In a subsequent garbage collection operation, the latest version of the logical unit need not be retrieved from a different plane or a different set of sensing circuits, otherwise resulting in reduced performance. In one embodiment, any gaps left after alignment are padded by copying latest versions of logical units in sequential order thereto.
摘要翻译：非易失性存储器由一组存储器平面构成，每个存储器平面具有其自己的一组读/写电路，使得存储器平面可以并行操作。存储器被进一步组织成可擦除块，每个块用于存储数据的逻辑单元的逻辑组。在更新逻辑单元时，逻辑单元的所有版本都保持在与原始单元相同的平面中。优选地，逻辑单元的所有版本在平面内对准，使得它们都由相同的一组感测电路服务。在随后的垃圾回收操作中，不需要从不同的平面或不同的感测电路组检索最新版本的逻辑单元，否则导致性能降低。在一个实施例中，通过按照顺序复制最新版本的逻辑单元来填补对齐之后留下的任何间隙。

3. 发明申请

WO2006065668B1 NON-VOLATILE MEMORY AND METHOD WITH MULTI-STREAM UPDATING 审中-公开
标题翻译：非易失性存储器和多流程更新方法
公开(公告)号：WO2006065668B1
公开(公告)日：2007-02-22
申请号：PCT/US2005044720
申请日：2005-12-08
申请人： SANDISK CORP , SMITH PETER JOHN , GOROBETS SERGEY ANATOLIEVICH , BENNETT ALAN DAVID
发明人： SMITH PETER JOHN , GOROBETS SERGEY ANATOLIEVICH , BENNETT ALAN DAVID
IPC分类号： G06F12/02
CPC分类号： G06F3/064 , G06F3/0616 , G06F3/0679 , G06F12/0246 , G06F2212/7203 , G11C16/102
摘要： In a memory that is programmable page by page and each page having multiple sectors that are once-programmable, even if successive writes are sequential, the data recorded to an update block may be fragmented and non-sequential. Instead of recording update data to an update block, the data is being recorded in at least two interleaving streams. When a full page of data is available, it is recorded to the update block. Otherwise, it is temporarily recorded to the scratch pad block until a full page of data becomes available to be transferred to the update block. Preferably, a pipeline operation allows the recording to the update block to be set up as soon as the host write command indicates a full page could be written. If the actual write data is incomplete due to interruptions, the setup will be canceled and recording is made to the scratch pad block instead.
摘要翻译：在逐页可编程的存储器中，每页具有一次可编程的多个扇区，即使连续的写入是顺序的，记录到更新块的数据可能是分段的和非顺序的。代替将更新数据记录到更新块，数据被记录在至少两个交错流中。当全页数据可用时，它被记录到更新块。否则，它被临时记录到便笺块块中，直到完整页面的数据可用于传送到更新块。优选地，管道操作允许一旦主机写入命令指示可以写入完整页面就可以对更新块进行记录。如果实际的写入数据由于中断而不完整，则设置将被取消，而代之以记录。

4. 发明申请

WO2006065668A3 NON-VOLATILE MEMORY AND METHOD WITH MULTI-STREAM UPDATING 审中-公开
标题翻译：非易失性存储器和多流更新方法
公开(公告)号：WO2006065668A3
公开(公告)日：2006-12-07
申请号：PCT/US2005044720
申请日：2005-12-08
申请人： SANDISK CORP , SMITH PETER JOHN , GOROBETS SERGEY ANATOLIEVICH , BENNETT ALAN DAVID
发明人： SMITH PETER JOHN , GOROBETS SERGEY ANATOLIEVICH , BENNETT ALAN DAVID
IPC分类号： G06F12/02
CPC分类号： G06F3/064 , G06F3/0616 , G06F3/0679 , G06F12/0246 , G06F2212/7203 , G11C16/102
摘要： In a memory that is programmable page by page and each page having multiple sectors that are once-programmable, even if successive writes are sequential, the data recorded to an update block may be fragmented and non-sequential. Instead of recording update data to an update block, the data is being recorded in at least two interleaving streams. When a full page of data is available, it is recorded to the update block. Otherwise, it is temporarily recorded to the scratch pad block until a full page of data becomes available to be transferred to the update block. Preferably, a pipeline operation allows the recording to the update block to be set up as soon as the host write command indicates a full page could be written. If the actual write data is incomplete due to interruptions, the setup will be canceled and recording is made to the scratch pad block instead.
摘要翻译：在一页一页可编程的存储器中，每个页面具有一次可编程的多个扇区，即使连续写入是连续的，记录到更新块的数据也可以是分段的并且是非顺序的。不是将更新数据记录到更新块，而是将数据记录在至少两个交织流中。当整页数据可用时，它被记录到更新块中。否则，它会暂时记录到便笺式存储块中，直到整页数据可用于传输到更新块为止。优选地，流水线操作允许一旦主机写入命令指示可以写入完整页面就立即记录到更新块。如果实际的写入数据由于中断而不完整，则设置将被取消，而代之以记录到高速暂存区块。

5. 发明申请

WO2010078540A3 SPARE BLOCK MANAGEMENT IN NON-VOLATILE MEMORIES 审中-公开
标题翻译：非易失性记忆中的备份管理
公开(公告)号：WO2010078540A3
公开(公告)日：2010-08-26
申请号：PCT/US2010020014
申请日：2010-01-04
申请人： SANDISK CORP , GOROBETS SERGEY ANATOLIEVICH , BENNETT ALAN DAVID , ZILBERMAN EUGENE
发明人： GOROBETS SERGEY ANATOLIEVICH , BENNETT ALAN DAVID , ZILBERMAN EUGENE
IPC分类号： G11C11/56 , G06F12/02 , G11C29/00
CPC分类号： G11C11/5621 , G06F12/0246 , G06F12/0866 , G06F12/0897 , G06F2212/7202 , G11C29/76 , G11C2211/5641
摘要： Techniques for the management of spare blocks in re-programmable non-volatile memory system, such as a flash EEPROM system, are presented. In one set of techniques, for a memory partitioned into two sections (for example a binary section and a multi-state section), where blocks of one section are more prone to error, spare blocks can be transferred from the more error prone partition to the less error prone partition. In another set of techniques for a memory partitioned into two sections, blocks which fail in the more error prone partition are transferred to serve as spare blocks in the other partition. In a complementary set of techniques, a 1-bit time stamp is maintained for free blocks to determine whether the block has been written recently. Other techniques allow for spare blocks to be managed by way of a logical to physical conversion table by assigning them logical addresses that exceed the logical address space of which a host is aware.
摘要翻译：介绍了用于管理可重新编程的非易失性存储器系统（例如闪存EEPROM系统）中的备用块的技术。在一组技术中，对于分为两个部分（例如二进制部分和多状态部分）的存储器，其中一个部分的块更容易出错，可以将备用块从更容易出错的分区转移到易出错的分区。在将内存分成两部分的另一组技术中，在更容易出错的分区中失败的块被传送以用作另一分区中的备用块。在一组互补的技术中，为空闲块保留1位时间标记以确定块是否最近被写入。其他技术允许空闲块通过逻辑到物理转换表的方式进行管理，方法是分配逻辑地址超过主机知道的逻辑地址空间。

6. 发明申请

WO2006078531A2 SCHEDULING OF HOUSEKEEPING OPERATIONS IN FLASH MEMORY SYSTEMS 审中-公开
标题翻译：在闪存存储系统中调度操作
公开(公告)号：WO2006078531A2
公开(公告)日：2006-07-27
申请号：PCT/US2006001070
申请日：2006-01-11
申请人： SANDISK CORP , BENNETT ALAN DAVID , GOROBETS SERGEY ANATOLIEVICH , TOMLIN ANDREW , SCHROTER CHARLES
发明人： BENNETT ALAN DAVID , GOROBETS SERGEY ANATOLIEVICH , TOMLIN ANDREW , SCHROTER CHARLES
IPC分类号： G06F13/16 , G11C16/34
CPC分类号： G11C16/349 , G06F12/0246 , G06F2212/7205
摘要： A re-programmable non-volatile memory system, such as a flash EEPROM system, having its memory cells grouped into blocks of cells that are simultaneously erasable is operated to perform memory system housekeeping operations in the foreground during execution of a host command, wherein the housekeeping operations are unrelated to execution of the host command. Both one or more such housekeeping operations and execution of the host command are performed within a time budget established for executing that particular command. One such command is to write data being received to the memory. One such housekeeping operation is to level out the wear of the individual blocks that accumulates through repetitive erasing and re-programming.
摘要翻译：操作一个可重新编程的非易失性存储器系统，例如闪存EEPROM系统，其具有分组为可同时擦除的单元块的存储器单元，以在主机命令的执行期间在前台执行存储器系统管理操作，其中，内务管理操作与主机命令的执行无关。在为执行该特定命令建立的时间预算内执行一个或多个此类内务处理操作和主机命令的执行。一个这样的命令是将正在接收的数据写入存储器。一个这样的内务处理操作是通过重复擦除和重新编程来平衡累积的各个块的磨损。

7. 发明申请

WO2006065566A9 SCRATCH PAD BLOCK 审中-公开
标题翻译：刮板垫块
公开(公告)号：WO2006065566A9
公开(公告)日：2006-09-08
申请号：PCT/US2005043811
申请日：2005-12-01
申请人： SANDISK CORP , BENNETT ALAN DAVID , GOROBETS SERGEY ANATOLIEVICH
发明人： BENNETT ALAN DAVID , GOROBETS SERGEY ANATOLIEVICH
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7203
摘要： In a memory array having a minimum unit of erase of a block, a scratch pad block is used to store data that is later written to another block. The data may be written to the scratch pad block with a low degree of parallelism and later written to another location with a high degree of parallelism so that it is stored with high density. Data may be temporarily stored in the scratch pad block until it can be more efficiently stored elsewhere. This may be when some other data is received. Unrelated data may be stored in the same page of a scratch pad block.
摘要翻译：在具有块的最小擦除单元的存储器阵列中，使用便笺式块来存储稍后写入到另一块的数据。数据可以以低平行度写入便笺式块，然后写入另一个具有高度平行度的位置，以便以高密度存储。数据可能暂时存储在便笺式存储块中，直到其可以更高效地存储在别处。这可能是在收到其他一些数据时。不相关的数据可以存储在便笺式块的相同页面中。

8. 发明申请

WO2010078540A4 SPARE BLOCK MANAGEMENT IN NON-VOLATILE MEMORIES 审中-公开
标题翻译：非易失性存储器中的备件管理
公开(公告)号：WO2010078540A4
公开(公告)日：2010-10-14
申请号：PCT/US2010020014
申请日：2010-01-04
申请人： SANDISK CORP , GOROBETS SERGEY ANATOLIEVICH , BENNETT ALAN DAVID , ZILBERMAN EUGENE
发明人： GOROBETS SERGEY ANATOLIEVICH , BENNETT ALAN DAVID , ZILBERMAN EUGENE
IPC分类号： G11C11/56 , G06F12/02 , G11C29/00
CPC分类号： G11C11/5621 , G06F12/0246 , G06F12/0866 , G06F12/0897 , G06F2212/7202 , G11C29/76 , G11C2211/5641
摘要： Techniques for the management of spare blocks in re-programmable non-volatile memory system, such as a flash EEPROM system, are presented. In one set of techniques, for a memory partitioned into two sections (for example a binary section and a multi-state section), where blocks of one section are more prone to error, spare blocks can be transferred from the more error prone partition to the less error prone partition. In another set of techniques for a memory partitioned into two sections, blocks which fail in the more error prone partition are transferred to serve as spare blocks in the other partition. In a complementary set of techniques, a 1-bit time stamp is maintained for free blocks to determine whether the block has been written recently. Other techniques allow for spare blocks to be managed by way of a logical to physical conversion table by assigning them logical addresses that exceed the logical address space of which a host is aware.
摘要翻译：提出了用于管理可重新编程的非易失性存储器系统中的备用块的技术，例如闪存EEPROM系统。在一组技术中，对于分为两个部分（例如二进制部分和多状态部分）的内存，一个部分的块更容易出错，备用块可以从更易出错的分区传输到较小的错误分区。在分为两部分的内存的另一组技术中，在更易出错的分区中失败的块被传送到另一分区中的备用块。在一组互补的技术中，为空闲块维护1位时间戳，以确定块是否已被最近写入。其他技术允许通过逻辑到物理转换表来管理备用块，分配逻辑地址超过主机知道的逻辑地址空间。

9. 发明申请

WO2005066970A3 ROBUST DATA DUPLICATION AND IMPROVED UPDATE METHOD IN A MULTIBIT NON-VOLATILE MEMORY 审中-公开
标题翻译：多个非易失性存储器中的稳健数据重复和改进方法
公开(公告)号：WO2005066970A3
公开(公告)日：2005-11-24
申请号：PCT/US2004043680
申请日：2004-12-22
申请人： SANDISK CORP , GOROBETS SERGEY ANATOLIEVICH , BRYCE ALAN DOUGLAS , BENNETT ALAN DAVID
发明人： GOROBETS SERGEY ANATOLIEVICH , BRYCE ALAN DOUGLAS , BENNETT ALAN DAVID
IPC分类号： G06F11/20 , G06F12/02 , G11C11/56 , G11C16/34 , G11C29/00
CPC分类号： G11C16/20 , G06F11/1072 , G06F11/141 , G06F11/1415 , G06F11/1658 , G06F11/1666 , G06F12/0246 , G06F2212/7202 , G06F2212/7205 , G11C11/5621 , G11C11/5628 , G11C29/00 , G11C2211/5641
摘要： In a nonvolatile memory with block management system, critical data such as control data for the block management system is maintained in duplicates. Various methods are described for robustly writing and reading two copies of critical data in multi-state memory. In another aspect of the invention, a preemptive garbage collection on memory block containing control data avoids an undesirable situation where a large number of such memory blocks need be garbage collected at the same time.
摘要翻译：在具有块管理系统的非易失性存储器中，诸如块管理系统的控制数据的关键数据保持重复。描述了用于在多状态存储器中强制写入和读取关键数据的两个副本的各种方法。在本发明的另一方面，在包含控制数据的存储器块上的抢占式垃圾收集避免了不希望的情况，其中大量的这种存储器块需要同时被垃圾收集。

10. 发明申请

WO2008038002A3 T CELL THERAPIES 审中-公开
标题翻译： T细胞疗法
公开(公告)号：WO2008038002A3
公开(公告)日：2008-07-24
申请号：PCT/GB2007003676
申请日：2007-09-26
申请人： MEDIGENE LTD , BENNETT ALAN DAVID , JAKOBSEN BENT KARSTEN
发明人： BENNETT ALAN DAVID , JAKOBSEN BENT KARSTEN
IPC分类号： C07K14/705 , A61K39/00
CPC分类号： C12N5/0636 , A61K2039/5158 , C12N2501/515 , C12N2510/00
摘要： This invention provides a method of treating cancer or infection by administering T cells transfected with T cell receptors (TCRs) which in their soluble form have a half life for their interaction with their cognate peptide- MHC complex chosen to enhance the avidity of the T cells for target cells presenting that peptide MHC complex while maintaining the activation specificity of the T cells by that peptide-MHC complex.
摘要翻译：本发明提供了通过施用T细胞受体（TCR）转染的T细胞治疗癌症或感染的方法，T细胞受体（TCR）以其可溶形式具有半衰期用于其与选择用于增强T细胞亲合力的同源肽-MHC复合物的相互作用对于呈递肽MHC复合物的靶细胞，同时保持该肽-MHC复合物对T细胞的激活特异性。

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