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1. 发明申请

WO2015130560A1 GETTER STRUCTURE AND METHOD FOR FORMING SUCH STRUCTURE 审中-公开
标题翻译：形成这种结构的结构和方法
公开(公告)号：WO2015130560A1
公开(公告)日：2015-09-03
申请号：PCT/US2015/016736
申请日：2015-02-20
申请人： RAYTHEON COMPANY
发明人： GOOCH, Roland , KENNEDY, Adam, M. , BLACK, Stephen, H. , KOCIAN, Thomas, Allan , DIEP, Buu
IPC分类号： G01J5/04 , G02B19/00 , H01L23/26
CPC分类号： C23C14/28 , B32B3/10 , B32B15/04 , B32B2255/205 , B32B2457/00 , C23C14/06 , G01J5/045 , H01L23/26 , H01L2924/0002 , Y10T428/24802 , H01L2924/00
摘要： A getter structure and method wherein a layer of seed material is deposited on a predetermined region of a surface of a structure under conditions to form a plurality of nucleation sites on a surface of the structure. The nucleation sites have an average height over the surface area of the predetermined region of less than one molecule thick. Subsequently a getter material is deposited over the surface to form a plurality of getter material members projecting outwardly from the nucleation sites.
摘要翻译：一种吸气剂结构和方法，其中在结构的表面上形成多个成核位置的条件下，将种子材料层沉积在结构表面的预定区域上。成核位置具有小于一分子厚的预定区域的表面积的平均高度。随后，吸气剂材料沉积在表面上以形成从成核位置向外突出的多个吸气材料构件。

2. 发明申请

WO2015088771A1 METHOD OF FORMING DEPOSITED PATTERNS ON A SURFACE 审中-公开
标题翻译：在表面形成沉积图案的方法
公开(公告)号：WO2015088771A1
公开(公告)日：2015-06-18
申请号：PCT/US2014/067285
申请日：2014-11-25
申请人： RAYTHEON COMPANY
发明人： GOOCH, Roland , KOCIAN, Thomas, Allan , DIEP, Buu , KENNEDY, Adam, M. , BLACK, Stephen, H.
IPC分类号： B81C1/00
CPC分类号： H01L31/18 , B81C1/00373 , B81C2201/0188 , H01L31/02327
摘要： A method for forming a coating of material on selected portions of a surface of a substrate having a plurality of cavities (11) includes: providing a structure (16) having a release agent (18) thereon; contacting a top surface (17) of the wafer (10) with the release agent to transfer portions of the release agent to the top surface of the wafer while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure (24); the release agent disposed on the top surface of the wafer and with the bottom portions of the cavities void of the release agent; exposing the intermediate structure to the material (27) to blanket coat the material on both the release agent and the bottom portions of the cavities; and selectively removing the release agent together with the coating material while leaving the coating material on the bottom portions of the cavities.
摘要翻译：在具有多个空腔（11）的基板的表面的选定部分上形成材料涂层的方法包括：提供在其上具有脱模剂（18）的结构（16）; 使所述晶片（10）的顶表面（17）与所述脱模剂接触以将所述脱模剂的部分转移到所述晶片的顶表面，同时所述空腔的底部保持与所述脱模剂间隔开以产生中间结构（24 ）; 所述脱模剂设置在所述晶片的顶表面上，并且所述空腔的底部部分脱离所述脱模剂; 将所述中间结构暴露于所述材料（27）以将所述材料涂覆在所述空腔的所述脱模剂和所述底部两者上; 并且与涂料一起选择性地除去脱模剂，同时将涂料留在空腔的底部。

3. 发明申请

WO2014099123A1 GETTER STRUCTURE FOR WAFER LEVEL VACUUM PACKAGED DEVICE 审中-公开
标题翻译：水平真空包装设备的结构
公开(公告)号：WO2014099123A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/065883
申请日：2013-10-21
申请人： RAYTHEON COMPANY
发明人： GOOCH, Roland , KENNEDY, Adam, M. , BLACK, Stephen, H. , KOCIAN, Thomas, Allan , DIEP, Buu
IPC分类号： G01J5/02 , G01J5/04 , H01L23/26 , G01J5/08 , B81B7/00
CPC分类号： H01L31/0203 , B81B7/0038 , G01J5/0285 , G01J5/045 , G01J5/0875 , H01L23/26 , H01L27/14618 , H01L27/14649 , H01L2924/0002 , Y10T29/4998 , Y10T428/24521 , H01L2924/00
摘要： A wafer level vacuum packaged (WLVP) device having a first substrate having an array of detectors and a second substrate bonded to the first substrate having a plurality of protrusions and a plurality of getter material members projecting outwardly from a sidewall of the protrusions members are disposed at oblique angles to the sidewalls and have ends extending into gaps between the protrusions. The device is formed by: forming protrusions into a surface of a substrate; and depositing getter material by physical vapor deposition from an evaporating source of the getter material at an oblique angle to the sidewalls, atoms of the getter material initially forming nucleation sites on the sidewalls with subsequent atoms attaching to the nucleation sites and shadowing area surrounding each nucleation site, the getter material thereby growing into structures towards the evaporating source.
摘要翻译：晶片级真空封装（WLVP）器件具有具有检测器阵列的第一衬底和与第一衬底接合的第二衬底，其具有多个突起和从突出构件的侧壁向外突出的多个吸气材料构件与侧壁成倾斜的角度并且具有延伸到突起之间的间隙的端部。该装置通过以下方式形成：将突起形成在基板的表面中; 并且通过物理气相沉积从吸气材料的蒸发源以与侧壁倾斜的角度沉积吸气剂材料，吸气材料的原子最初在侧壁上形成成核位点，随后的原子附着于成核位置和围绕每个成核的阴影区域吸气剂材料因此生长成朝向蒸发源的结构。

4. 发明申请

WO2014070534A2 INTEGRATED BONDLINE SPACERS FOR WAFER LEVEL PACKAGED CIRCUIT DEVICES 审中-公开
标题翻译：用于水平包装电路设备的集成式骨架间隔件
公开(公告)号：WO2014070534A2
公开(公告)日：2014-05-08
申请号：PCT/US2013/066266
申请日：2013-10-23
申请人： RAYTHEON COMPANY
发明人： GOOCH, Roland , DIEP, Buu , KOCIAN, Thomas Allan , BLACK, Stephen H. , KENNEDY, Adam M.
IPC分类号： H01L23/48 , H01L21/56 , H01L23/544
CPC分类号： B81B7/0041 , B81B7/007 , B81C1/00269 , B81C2203/019 , H01L23/053 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/27444 , H01L2224/27462 , H01L2224/27464 , H01L2224/29011 , H01L2224/291 , H01L2224/83001 , H01L2224/83007 , H01L2224/83139 , H01L2224/8314 , H01L2224/83141 , H01L2224/83192 , H01L2924/1461 , H01L2924/163 , H01L2924/00014 , H01L2924/014
摘要： A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.
摘要翻译：一种形成晶片级封装电路器件的方法包括形成器件晶片，器件晶片包括残留在器件晶片的衬底的第一区域中的第一组一个或多个材料层; 以及形成被配置为附接到所述器件晶片的盖晶片，所述盖晶片包括留在所述盖晶片的衬底的第二区域中的第二组一个或多个材料层; 其中一个或多个材料层的所述第一和第二组的组合厚度在所述器件晶片和所述盖晶片接合时限定了整合的接合间隙控制结构。

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