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    • 2. 发明申请
    • FABRICATION OF TRANSISTOR WITH HIGH DENSITY STORAGE CAPACITOR
    • 具有高密度存储电容器的晶体管的制造
    • WO2015183510A1
    • 2015-12-03
    • PCT/US2015/029721
    • 2015-05-07
    • QUALCOMM MEMS TECHNOLOGIES, INC.
    • KIM, CheonhongFUNG, Tze-ChingSEO, Jae HyeongCHANG, Tallis Young
    • H01L27/12
    • H01L27/13H01L27/1225H01L27/1255H01L28/40H01L29/6675
    • This disclosure provides apparatuses and methods for fabricating TFTs and storage capacitors on a substrate. In one aspect, an apparatus includes a TFT and a storage capacitor, where the TFT includes a first metal layer, a second metal layer, and a semiconductor layer, where the semiconductor layer is protected by a first etch stop layer and a second etch stop layer. The storage capacitor includes the second etch stop layer as a dielectric between the first metal layer and the second metal layer. In another aspect, an apparatus includes a TFT and a storage capacitor, where the TFT includes a first metal layer, a dielectric layer, and a semiconductor layer, where the semiconductor layer is protected by an etch stop layer. The storage capacitor includes the dielectric layer as a dielectric between the first metal layer and the semiconductor layer.
    • 本公开提供了用于在基板上制造TFT和存储电容器的装置和方法。 在一个方面,一种装置包括TFT和存储电容器,其中TFT包括第一金属层,第二金属层和半导体层,其中半导体层被第一蚀刻停止层和第二蚀刻停止 层。 存储电容器包括作为第一金属层和第二金属层之间的电介质的第二蚀刻停止层。 在另一方面,一种装置包括TFT和存储电容器,其中TFT包括第一金属层,电介质层和半导体层,其中半导体层被蚀刻停止层保护。 存储电容器包括作为第一金属层和半导体层之间的电介质的电介质层。
    • 5. 发明申请
    • STORAGE CAPACITOR FOR ELECTROMECHANICAL SYSTEMS AND METHODS OF FORMING THE SAME
    • 用于机电系统的存储电容器及其形成方法
    • WO2013070608A1
    • 2013-05-16
    • PCT/US2012/063715
    • 2012-11-06
    • QUALCOMM MEMS TECHNOLOGIES, INC.
    • SEO, Jae HyeongTUNG, Ming-HauMIGNARD, Marc M.
    • G02B26/00
    • G02B26/001
    • This disclosure provides systems, methods and apparatus for storage capacitors. In one aspect, an electromechanical systems (EMS) device includes a substrate, an optical stack disposed over the substrate, a mechanical layer positioned over the optical stack, and a storage capacitor. The optical stack includes a stationary electrode and at least one dielectric layer disposed over the stationary electrode, and the storage capacitor includes a first plate, a second plate and a dielectric structure disposed between the first and second plates. The first plate includes a portion of the mechanical layer positioned over an optically non-active region of the device, and the dielectric structure of the storage capacitor includes a portion of the at least one dielectric layer of the optical stack.
    • 本公开提供了用于存储电容器的系统,方法和装置。 一方面,机电系统(EMS)装置包括衬底,设置在衬底上的光学堆叠,位于光学堆叠上的机械层和存储电容器。 光学堆叠包括固定电极和设置在固定电极上的至少一个电介质层,并且存储电容器包括设置在第一和第二板之间的第一板,第二板和电介质结构。 第一板包括位于器件的光学无效区域上的机械层的一部分,并且存储电容器的电介质结构包括光学堆叠的至少一个电介质层的一部分。