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1. 发明申请

WO2007021741A2 ELECTRICALLY-CONDUCTIVE AND SEMI-CONDUCTIVE FILMS 审中-公开
标题翻译：导电和半导体膜
公开(公告)号：WO2007021741A2
公开(公告)日：2007-02-22
申请号：PCT/US2006/031028
申请日：2006-08-09
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , CAO, Tingbing , XU, Qiaobing , WINKLEMAN, Adam , WHITESIDES, George
发明人： CAO, Tingbing , XU, Qiaobing , WINKLEMAN, Adam , WHITESIDES, George
IPC分类号： G03F7/00
CPC分类号： C23C14/20 , B82Y30/00 , C23C14/0005 , C23C14/588 , G01N33/48707 , H01L21/76838
摘要： Methods and apparatuses for generating electrically-conductive and/or semi-conductive films, and more specifically, methods and apparatuses for generating conductive and/or semi-conductive films having nanoscale features are provided. In one embodiment, an electrically-conductive or semi-conductive film (e.g., a gold layer of less than 50 nanometer thickness) is provided on a substrate (e.g., a poly(dimethylsiloxane) (PDMS) stamp). The substrate may optionally include patterns or features having raised and recessed portions. A first portion of the film may be removed from the substrate, e.g., by methods such as physically contacting the first portion of the film with a surface to which the first portion preferentially adheres. This process can leave a second portion of the film remaining on the substrate. In some embodiments, the second portion includes at least one region having a dimension substantially parallel to a portion of the substrate i.e., of less than 50 nanometers. The second portion of the film may be used to establish electrical communication with an electrical contact. Advantageously, electrically-conductive and/or semi-conductive films having nanoscale features can be fabricated over large areas (e.g., areas greater than 1 cm 2 ) in a single step.
摘要翻译：提供用于产生导电和/或半导电膜的方法和装置，更具体地，提供了用于产生具有纳米尺度特征的导电和/或半导电膜的方法和装置。在一个实施例中，在衬底（例如，聚（二甲基硅氧烷）（PDMS）印模）上提供导电或半导电膜（例如，小于50纳米厚度的金层）。衬底可以可选地包括具有凸起和凹陷部分的图案或特征。膜的第一部分可以例如通过诸如使膜的第一部分与第一部分优先粘附的表面物理接触的方法从基材上除去。该过程可以使膜的第二部分残留在基底上。在一些实施例中，第二部分包括具有基本上平行于基底的一部分的尺寸的至少一个区域，即小于50纳米。胶片的第二部分可用于与电触点建立电连通。有利地，可以在单个步骤中在大面积（例如，大于1cm 2的区域）上制造具有纳米尺度特征的导电和/或半导电膜。

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