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    • 2. 发明申请
    • SPLIT EXIT PUPIL HEADS-UP DISPLAY SYSTEMS AND METHODS
    • SPLIT EXIT瞳孔抬头显示系统和方法
    • WO2017180372A1
    • 2017-10-19
    • PCT/US2017/026013
    • 2017-04-04
    • OSTENDO TECHNOLOGIES, INC.
    • CAI, JingboEL-GHOROURY, Hussein S.CHUANG, Chih-LiMAIERS, Marty
    • G02B27/00G02B27/10G02B27/01
    • A split exit pupil heads-up display (HUD) system and method. The HUD system architecture makes use of a split exit pupil design method that enables a modular HUD system and allows the HUD system viewing eye-box size to be tailored while reducing the overall volumetric aspects. A single HUD module utilizes a micro-pixel imager to generate a HUD virtual image with a given viewing eye-box size. When integrated together into a single HUD system, a multiplicity of such a HUD modules displaying the same image enables an integrated HUD system to have an eye-box size that equals the same multiple of the eye-box size of a single HUD module. The brightness of the integrated HUD system is maintained while the eye-box size becomes multiple size of the eye-box of a single module. The integrated HUD system can be comprised of multiplicity of single HUD modules to scale the eye-box size to match the intended application while maintaining system brightness.
    • 分离出瞳平视显示器(HUD)系统和方法。 HUD系统架构利用分离出瞳设计方法,使得模块化HUD系统能够使HUD系统在观察眼睛框尺寸的同时减小整体体积方面。 单个HUD模块利用微像素成像器来生成具有给定观看眼框大小的HUD虚拟图像。 当集成到单个HUD系统中时,多个显示相同图像的这种HUD模块使集成HUD系统具有的眼箱尺寸等于单个HUD模块的眼箱尺寸的相同倍数。 集成HUD系统的亮度保持不变,而眼睛框尺寸变成单个模块的眼睛框的多个尺寸。 集成的HUD系统可以由多个单独的HUD模块组成,以便在保持系统亮度的同时缩放眼睛盒的尺寸以匹配预期的应用。

    • 3. 发明申请
    • III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING AMBER-TO-RED LIGHT EMISSION (>600 nm) AND A METHOD FOR MAKING SAME
    • 具有琥珀色 - 红色光发射(> 600nm)的III型氮化物半导体发光器件及其制造方法
    • WO2017062889A1
    • 2017-04-13
    • PCT/US2016/056157
    • 2016-10-07
    • OSTENDO TECHNOLOGIES, INC.
    • YEH, Yea-Chuan MiltonEL-GHOROURY, Hussein S.LI, XingCHEN, Jyh-ChiaCHUANG, Chih-Li
    • H01L33/02H01L33/06H01L33/12H01L33/30
    • H01L33/06H01L33/0075H01L33/02H01L33/12H01L33/30H01L33/32
    • A III-nitride semiconductor light emitting device incorporating n -type III-nitride cladding layers, indium containing III-nitride light emitting region, and p -type III-nitride cladding layers. The light emitting region is sandwiched between n - and p -type III-nitride cladding layers and includes multiple sets of multi-quantum-wells (MQWs). The first MQW set formed on the n -type cladding layer comprises relatively lower indium concentration. The second MQW set comprising relatively moderate indium concentration. The third MQW set adjacent to the p -type cladding layer incorporating relatively highest indium concentration of the three MQW sets and is capable of emitting amber-to-red light. The first two MQW sets are utilized as pre-strain layers. Between the MQW sets, intermediate strain compensation layers (ISCLs) are added. The combination of the first two MQW sets and ISCLs prevent phase separation and enhance indium uptake in the third MQW set. The third MQW set, as a result, retains sufficiently high indium concentration to emit amber-to-red light of high output power without any phase separation associated problems.
    • 包含n型III族氮化物包覆层的III族氮化物半导体发光器件,含有III族氮化物发光区域的铟和III型氮化物覆盖层。 发光区域夹在n型和p型III族氮化物覆层之间,并且包括多组多量子阱(MQW)。 形成在n型包覆层上的第一MQW组包含相对较低的铟浓度。 第二MQW组合包含相对中等的铟浓度。 第三MQW设置为与三个MQW组中具有相对较高的铟浓度的p型包覆层相邻并且能​​够发射琥珀色至红色的光。 前两个MQW组用作预应变层。 在MQW组之间,添加了中间应变补偿层(ISCL)。 前两个MQW组和ISCL的组合防止相分离并增强第三MQW组中的铟摄取。 结果,第三MQW组保持足够高的铟浓度以发射具有高输出功率的琥珀色至红色光,而没有任何相分离相关问题。