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1. 发明申请

WO2009083001A2 RADIATION-EMITTING BODY AND METHOD FOR PRODUCING A RADIATION-EMITTING BODY 审中-公开
标题翻译：辐射发射体和产生辐射发射体的方法
公开(公告)号：WO2009083001A2
公开(公告)日：2009-07-09
申请号：PCT/DE2008002136
申请日：2008-12-19
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , EBERHARD FRANZ , WINDISCH REINER , WALTER ROBERT , SCHMAL MICHAEL , AHLSTEDT MAGNUS
发明人： EBERHARD FRANZ , WINDISCH REINER , WALTER ROBERT , SCHMAL MICHAEL , AHLSTEDT MAGNUS
IPC分类号： H01L33/22 , H01L33/46
CPC分类号： H01L33/22 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a radiation-emitting body, comprising a layer sequence, having an active layer (10) for producing electromagnetic radiation, a reflection layer (50), which reflects the radiation produced, and at least one intermediate layer (40), which is disposed between the active layer (10) and the reflection layer (50). To this end, the active layer (10) on an interface (15) directed toward the reflection layer (50) comprises a rough region, and the reflection layer (50) is substantially planar on an interface (45) directed toward the active layer (10). The invention further relates to a method for producing a radiation-emitting body, wherein a layer sequence is configured on a substrate having an active layer (10) for producing electromagnetic radiation. To this end, an interface (15) is roughened on the active layer (10) and at least one intermediate layer (40) and a reflection layer (50) are configured.
摘要翻译：本发明涉及一种包括一系列层，包括用于产生电磁辐射的反射层的有源层（10）发射辐射的本体（50），其反映所产生的辐射，并用至少一个中间层（40）（所述活性层之间 10）和反射层（50）。在这种情况下，反射层（50）在有源层（10）定向边界表面（15）具有粗糙，和反射层（50）被引导在有源层（10）界面（45）基本上是平面的。本发明还涉及一种用于制造辐射发射体的方法，其中在具有用于产生电磁辐射的活性层（10）的基板上形成层序列。这里，活性层（10）上的界面（15）粗糙化并形成至少一个中间层（40）和反射层（50）。

2. 发明申请

WO2007087769A3 OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH CURRENT SPREADING LAYER 审中-公开
标题翻译： WITH电流扩展层的光电子半导体器件
公开(公告)号：WO2007087769A3
公开(公告)日：2007-09-20
申请号：PCT/DE2006001617
申请日：2006-09-14
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , AHLSTEDT MAGNUS , EISSLER DIETER , WALTER ROBERT , WIRTH RALF
发明人： AHLSTEDT MAGNUS , EISSLER DIETER , WALTER ROBERT , WIRTH RALF
IPC分类号： H01L31/0224 , H01L33/00 , H01L33/42 , H01S5/042
CPC分类号： H01L31/022466 , H01L31/103 , H01L31/1884 , H01L33/0095 , H01L33/42 , H01L2224/48463 , H01S5/0421 , Y02E10/50
摘要： An optoelectronic semiconductor component with a semiconductor body (10) and a current spreading layer (3) is disclosed. The current spreading layer (3) is applied at least on parts of the semiconductor body (10). The current spreading layer (3) contains a metal (1) that forms a transparent, electroconductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from the side of the current spreading layer (3) facing the semiconductor body (10) to the side of the current spreading layer (3) away from the semiconductor body (10). Also disclosed is a method for producing this type of semiconductor component.
摘要翻译：提供了一种具有一半导体主体（10），和一个电流扩散层（3）的光电子半导体器件。电流扩散层（3）至少在所述半导体主体（10）上的地方使用。电流扩散层（3）包含一个金属（1）形成在电流扩散层（2）透明导电性的金属氧化物，和浓度（x）的金属（1）的从所述半导体主体增加（10）侧上面向背离由后电流扩散层（3）的距离所述半导体主体（10）侧。此外，提供了一种制造这种半导体器件的方法。

3. 发明申请

WO2009015645A3 OPTOELECTRONIC COMPONENT HAVING A LAYER STACK 审中-公开
标题翻译： WITH A栈层OPTO电子元件
公开(公告)号：WO2009015645A3
公开(公告)日：2009-04-23
申请号：PCT/DE2008001225
申请日：2008-07-24
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , AHLSTEDT MAGNUS , BADER STEFAN , BAUR JOHANNES , SABATHIL MATTHIAS , STRASSBURG MARTIN , ZEHNDER ULRICH
发明人： AHLSTEDT MAGNUS , BADER STEFAN , BAUR JOHANNES , SABATHIL MATTHIAS , STRASSBURG MARTIN , ZEHNDER ULRICH
IPC分类号： H01L33/02 , H01L33/04 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/46
CPC分类号： H01L33/02 , H01L33/04 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/46
摘要： Optoelectronic component (20) having a layer stack (10), comprising at least the following: a layer sequence constituting a semiconductor light emitting diode (5) and comprising at least a first light emitting diode layer (2), a second light emitting diode layer (4) and an optically active zone (3) between the first (2) and the second light emitting diode layer (4), wherein the two light emitting diode layers (2, 4) are in each case formed from a III-V semiconductor material containing in each case at least one of the elements aluminium, gallium and indium and in each case at least one of the elements nitrogen, phosphorus and arsenic, and wherein the first light emitting diode layer (2) is an n-doped layer and the second light emitting diode layer (4) is a p-doped layer, a silver-containing metallic layer (9) and an interlayer (8) composed of a transparent conductive oxide, which is arranged between the semiconductor light emitting diode (15) and the metallic layer (9), characterized in that the metallic layer (9) and the interlayer (8) are arranged on that side of the semiconductor light emitting diode (15) which the p-doped second light emitting diode layer (4) faces, and in that at least one highly doped first semiconductor layer (7), the dopant concentration of which is greater than the dopant concentration of the second light emitting diode layer (4), is arranged between the second light emitting diode layer (4) and the interlayer (8).
摘要翻译：光电子器件（20），包括一个叠层（10），至少包括：一个层序列，其是一种半导体发光二极管（5）和至少一个第一发光二极管（2），第二发光层（4）和光学活性区域（3）第一（2）和第二发光层（4），其中所述两个发光层（2,4）分别由III-V族半导体材料，元素铝，镓和铟的至少一种形成，并且在每种情况下之间包含的元素氮，磷和砷的至少一种，并且其中，所述第一发光层（2）的n型掺杂层和第二发光层（4）p型掺杂的层，含银金属层（9）和一个中间层（8 ），其特征在于透明导电氧化物，其被设置在半导体发光二极管（15）和所述金属层（9）之间的，所述金属金属层（9）和所述中间层（8）上的半导体发光二极管的那侧（15）被布置成面对所述p型第二发光层（4），并且所述第二发光层（4）和中间层（8）之间（7）被布置在至少一个高度掺杂的第一半导体层，掺杂剂浓度比所述第二发光层（4）的掺杂剂浓度。

4. 发明申请

WO2010084101A3 OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：光电子半导体元件和用于制造光电子半导体元件的方法
公开(公告)号：WO2010084101A3
公开(公告)日：2010-09-30
申请号：PCT/EP2010050536
申请日：2010-01-18
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , AHLSTEDT MAGNUS , AHLSTEDT MIKAEL , GROLIER VINCENT
发明人： AHLSTEDT MAGNUS , AHLSTEDT MIKAEL , GROLIER VINCENT
IPC分类号： H01L33/62 , H01L33/48 , H01L33/60 , H01L33/64
CPC分类号： H01L33/62 , H01L33/483 , H01L33/60 , H01L33/647 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an optoelectronic semiconductor component comprising at least one optoelectronic semiconductor chip (1), which comprises a radiation passage surface (11), wherein the radiation passage surface (11) is formed on a main surface (10) of the semiconductor chip (1); a cover plate (2), which is fastened to the optoelectronic semiconductor chip (1) and spans the entire radiation passage surface (11) of the semiconductor chip (1), wherein the cover plate (2) laterally protrudes over the semiconductor chip (1); a contact point (3), which is fastened to the cover plate (2) on the side of the cover plate (2) facing the semiconductor chip (1); wherein the contact point (3) is connected in an electrically conductive manner to at least one connection point (13) of the semiconductor chip (1) by means of a connecting element (4); and the connection point (13) is arranged on the main surface (10) of the semiconductor chip (1).
摘要翻译：提供了一种具有（1）具有一个辐射穿透面（11），其特征在于，在半导体芯片（1）的主表面（10）形成的辐射通路表面（11）的至少一个光电子半导体芯片一个otoelektronisches半导体装置; 盖板（2）的光电子半导体芯片（1）被固定和半导体芯片（1）跨越的整个辐射穿透面（11），其中所述盖板（2）突出于半导体芯片（1）横向; 提供在半导体芯片上的接触点（3）（1）的朝向（2）安装在所述盖板上的盖板（2）的侧上; 其中通过连接元件（4）与半导体芯片（1）的至少一个连接点（13）的接触点（3）电连接; 和半导体芯片（1）的主表面（10）上的连接点（13）。

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