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    • 4. 发明申请
    • SYSTEMS, APPARATUSES AND METHODS FOR CONVERTING LIGHT WAVELENGTHS
    • 用于转换光波长的系统,装置和方法
    • WO2014151655A1
    • 2014-09-25
    • PCT/US2014/026180
    • 2014-03-13
    • NORTHWESTERN UNIVERSITY
    • MOHSENI, Hooman
    • G09G5/10
    • H01L27/32H01L25/167H01L27/3227H01L31/055H01L51/422H01L2924/0002Y02E10/52H01L2924/00
    • In one aspect, an apparatus for converting light having a first wavelength to a light having a second wavelength is provided. The apparatus includes an interband light detector configured to detect light with the first wavelength, a light emitting device configured to emit light with the second wavelength, and a connector connecting the light detector to the light emitting device. In another aspect, an apparatus includes an absorber layer configured to absorb light having a first wavelength, a barrier and trap layer adjacent the absorber layer, an injector layer adjacent the barrier and trap layer, and an emitting device configured to emit light having a second wavelength. In a further aspect, a method is provided and includes absorbing an input light having a first wavelength, converting the first wavelength to a second wavelength different in size than the first wavelength, and emitting an output light having the second wavelength.
    • 一方面,提供一种用于将具有第一波长的光转换成具有第二波长的光的装置。 该装置包括配置成检测具有第一波长的光的带间光检测器,配置成发射具有第二波长的光的发光器件,以及将光检测器连接到发光器件的连接器。 在另一方面,一种装置包括:吸收层,被配置为吸收具有第一波长的光,邻近吸收层的阻挡层和捕获层,与阻挡层和捕获层相邻的注入层;以及发射器件,被配置为发射具有第二波长 波长。 另一方面,提供了一种方法,包括吸收具有第一波长的输入光,将第一波长转换成尺寸不同于第一波长的第二波长,以及发射具有第二波长的输出光。
    • 5. 发明申请
    • A SINGLE-PHOTON DETECTOR AND APPLICATIONS OF SAME
    • 单光子探测器及其应用
    • WO2007038600A2
    • 2007-04-05
    • PCT/US2006/037679
    • 2006-09-27
    • NORTHWESTERN UNIVERSITYMOHSENI, Hooman
    • MOHSENI, Hooman
    • H01L29/732
    • H01L27/14643
    • A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the photodetector comprises a plurality of InP/ AlInGa As/ AlGa As Sb layers, capable of spatially separating the electron and the hole of an photo-generated electron-hole pair in one layer, transporting one of the electron and the hole of the photo- generated electron-hole pair into another layer, focalizing it into a desired volume and trapping it therein, the desired volume having a dimension in a scale of nanometers to reduce its capacitance and increase the change of potential for a trapped carrier, and a nano-inj ector, capable of inj ecting carriers into the plurality of InP/ AlInGaAs/ AlGaAsSb layers, where the carrier transit time in the nano-inj ector is much shorter than the carrier recombination time therein, thereby causing a very large carrier recycling effect.
    • 用于光子检测的半导体光电探测器不使用雪崩倍增,并且能够在低偏置电压下工作并且没有过量噪声。 在一个实施例中,光电探测器包括多个InP / AlInGaAs / AlGaAsAsSb层,其能够在空间上分离一层中的光生电子空穴对的电子和空穴,将电子和空穴中的一个 将光生电子 - 空穴对转换成另一层,将其聚焦成所需体积并将其俘获在其中,所需体积具有纳米尺度的尺寸以降低其电容并增加捕获载体的电位变化, 以及能够将载流子注入到多个InP / AlInGaAs / AlGaAsSb层中的纳米注入器,其中纳米注入器中的载流子传输时间比其中的载流子再结合时间短得多,由此导致非常大的载流子 回收效果。