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1. 发明申请

WO2014165225A1 SYSTEM AND METHOD FOR THIN FILM PHOTOVOLTAIC MODULES AND BACK CONTACT FOR THIN FILM SOLAR CELLS 审中-公开
标题翻译：用于薄膜太阳能电池的薄膜光伏模块和背接触的系统和方法
公开(公告)号：WO2014165225A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/024862
申请日：2014-03-12
申请人： NEW JERSEY INSTITUTE OF TECHNOLOGY
发明人： CHENG, Zimeng , CHIN, Ken, K. , DELAHOY, Alan, E.
IPC分类号： H01L31/00
CPC分类号： H01L31/1884 , H01L31/02245 , H01L31/022466 , H01L31/0296 , H01L31/18 , Y02E10/50
摘要： The present disclosure provides improved thin film photovoltaic devices and related methods of fabrication. More particularly, the present disclosure provides improved CdTe photovoltaic devices and related fabrication methods. Disclosed is a novel thin film photovoltaic device and means for its fabrication. An exemplary device includes a metal oxide layer between the absorber layer and the rear electrode, resulting in an ohmic back contact and having improved device stability. The metal oxide layer can include at least one of silver oxide or copper oxide, and may additionally contain nickel oxide, molybdenum oxide, and/or vanadium oxide. The present disclosure is directed towards formation of a ohmic back contact for solar cells, the back contact having improved stability. In certain embodiments, the present disclosure provides for an ohmic contact to p-type II-VI semiconductors, and to the fabrication of solar cells having improved stability, and to solar panels incorporating such back contact schemes.
摘要翻译：本公开提供改进的薄膜光伏器件和相关的制造方法。更具体地，本公开提供了改进的CdTe光伏器件和相关的制造方法。公开了一种新颖的薄膜光伏器件及其制造方法。示例性器件包括在吸收层和后电极之间的金属氧化物层，导致欧姆反接触并且具有改进的器件稳定性。金属氧化物层可以包括氧化银或氧化铜中的至少一种，并且还可以含有氧化镍，氧化钼和/或氧化钒。本公开涉及形成太阳能电池的欧姆背接触，后接触具有改进的稳定性。在某些实施方案中，本公开提供了对p型II-VI半导体的欧姆接触以及具有改进的稳定性的太阳能电池的制造以及包含这种背接触方案的太阳能电池板。

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