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    • 4. 发明申请
    • EFFICIENT PITCH MULTIPLICATION PROCESS
    • 有效的PITCH MULTIPLICATION PROCESS
    • WO2008033695A2
    • 2008-03-20
    • PCT/US2007/077463
    • 2007-08-31
    • MICRON TECHNOLOGY, INC.FISCHER, MarkRUSSELL, StephenMANNING, H., Montgomery
    • FISCHER, MarkRUSSELL, StephenMANNING, H., Montgomery
    • H01L29/06H01L21/0338H01L21/3088
    • Pitch multiplied and non-pitch multiplied features of an integrated circuit (100), e.g., features in the array, interface and periphery areas (102), (104) and (106), respectively, of the integrated circuit (100), are formed by processing a substrate (110) through a mask. The mask is formed by patterning a photoresist layer which simultaneously defines mask elements corresponding to features in the array, interface and periphery areas (102), (104) and (106), respectively, of the integrated circuit (100). The pattern is transferred to an amorphous carbon layer (140). Sidewall spacers (165) are formed on the sidewalls of the patterned amorphous carbon layer (140). A layer (170) of protective material is deposited and then patterned to expose mask elements in the array region (102) and in selected parts of the interface or periphery areas (104), (106). Amorphous carbon in the array region or other exposed parts is removed, thereby leaving a pattern including free-standing, pitch multiplied spacers (165) in the array region (102). The protective material (170) is removed, leaving a pattern of pitch multiplied spacers in the array region (102) and non-pitch multiplied mask elements in the interface and periphery areas (104), (106). The pattern is transferred to a hard mask layer (150), through which an underlying substrate (110) is etched.
    • 集成电路(100)的间距乘法和非间距倍数特征分别为集成电路(100)的阵列,接口和外围区域(102),(104)和(106)中的特征,分别为 通过掩模处理衬底(110)形成。 通过图案化光刻胶层来形成掩模,该光致抗蚀剂层同时限定对应于集成电路(100)的阵列,界面和外围区域(102),(104)和(106)中的特征的掩模元件。 将图案转移到无定形碳层(140)。 侧壁间隔物(165)形成在图案化无定形碳层(140)的侧壁上。 沉积保护材料层(170),然后图案化以暴露阵列区域(102)中的掩模元件和界面或外围区域(104),(106)的选定部分。 在阵列区域或其他暴露部分中的无定形碳被去除,从而在阵列区域(102)中留下包括独立的间距倍增间隔物(165)的图案。 去除保护材料(170),在界面和外围区域(104),(106)中留下阵列区域(102)中的间距倍数间隔物和非间距倍增的掩模元件的图案。 将图案转移到硬掩模层(150),通过该掩模层(150)蚀刻下面的衬底(110)。