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1. 发明申请

WO2022238320A1 PHOTODETECTOR APPARATUS AND METHOD OF DETECTING LIGHT 审中-公开
公开(公告)号：WO2022238320A1
公开(公告)日：2022-11-17
申请号：PCT/EP2022/062468
申请日：2022-05-09
申请人： MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E. V. , UNIVERSITY OF TORONTO
发明人： LIN, Yiding , YONG, Zheng , MAK, Jason , SACHER, Wesley , POON, Joyce
IPC分类号： G02B6/12 , H01L31/105 , G02B2006/12123 , G02B6/12004
摘要： A photodetector apparatus (100), being configured for detecting light in the visible or infrared spectrum, comprises a substrate (30), a waveguide (20), a detector section (10), a first contact section (50) and a second contact section (52). The substrate (30) has a substrate surface (32) and a cladding layer (40). The waveguide (20) is arranged above the substrate surface (32) in the cladding layer (40) and is adapted for guiding light. The detector section (10) comprises a p-doped region (12, 14) and an ndoped region (16, 18), and the detector section (10') is arranged for producing charge carriers by the (10) light guided in the waveguide (20). The first contact section (50) is connected to the p-doped region (12, 14) and the second contact section (52) is connected to the n-doped region (16, 18), the first and second contact sections (50, 52) being connectable to a measuring device for measuring an electrical signal based on the charge carriers produced by the light. The waveguide (20) and the detector section (10) are spaced apart by a portion of the cladding layer (40) with a mutual distance such that optical power of the light guided in the waveguide( 20) can be gradually transferred from the waveguide (20) to the detector section (10). Furthermore, a method of detecting light in the visible or infrared spectrum is described.

2. 发明申请

WO2017149369A1 SYSTEM AND METHOD FOR MANUFACTURING A SEMICONDUCTOR JUNCTION 审中-公开
标题翻译：用于制造半导体连接的系统和方法
公开(公告)号：WO2017149369A1
公开(公告)日：2017-09-08
申请号：PCT/IB2016/057079
申请日：2016-11-23
申请人： THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO , POON, Joyce Kai See , YONG, Zheng , SACHER, Wesley David
发明人： POON, Joyce Kai See , YONG, Zheng , SACHER, Wesley David
IPC分类号： G02F1/025
摘要： A method of fabricating a P-N junction in a semiconductor structure, e.g. silicon (Si) structure, is presented. The method may include several implantation steps performed at a single implantation angle with respect to the Si structure. In a first implantation step, a first dopant species is implanted over a first portion of the Si structure including a first edge of the Si structure. In a second implantation step, a second dopant species is implanted over a second portion of the Si structure including a second edge of the Si structure opposed to the first edge but excluding the first edge. The first portion and the second portion may overlap in a central portion of the Si structure between the first edge and the second edge, such that the second dopant species may be implanted below the first dopant species. In a third implantation step, the second dopant species is implanted over the second portion of the Si structure including the second edge of the Si structure opposed to the first edge but excluding the first edge, such that the second dopant species is implanted above the first dopant species.
摘要翻译：制造半导体结构中的P-N结的方法，例如，硅（Si）结构。该方法可以包括在相对于Si结构的单个注入角处执行的多个注入步骤。在第一注入步骤中，将第一掺杂物质注入到包括Si结构的第一边缘的Si结构的第一部分上。在第二注入步骤中，将第二掺杂物质注入到Si结构的第二部分上，包括与第一边缘相对但不包括第一边缘的Si结构的第二边缘。第一部分和第二部分可以在第一边缘和第二边缘之间的Si结构的中心部分中重叠，使得第二掺杂物质可以被注入到第一掺杂物物质下方。在第三注入步骤中，将第二掺杂剂物质注入到Si结构的第二部分上，包括与第一边缘相对但不包括第一边缘的Si结构的第二边缘，使得第二掺杂剂物种被注入到第一边缘上方掺杂物质。

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