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1. 发明申请

WO2018111333A1 ATOMIC LAYER ETCH PROCESS USING PLASMA IN CONJUNCTION WITH A RAPID THERMAL ACTIVATION PROCESS 审中-公开
公开(公告)号：WO2018111333A1
公开(公告)日：2018-06-21
申请号：PCT/US2017/030350
申请日：2017-05-01
申请人： MATTSON TECHNOLOGY, INC.
发明人： MA, Shawming
IPC分类号： H01L21/311
摘要： A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.

2. 发明申请

WO2017123589A1 VARIABLE PATTERN SEPARATION GRID FOR PLASMA CHAMBER 审中-公开
标题翻译：等离子体室可变模式分离网格
公开(公告)号：WO2017123589A1
公开(公告)日：2017-07-20
申请号：PCT/US2017/012940
申请日：2017-01-11
申请人： MATTSON TECHNOLOGY, INC.
发明人： NAGORNY, Vladimir , MA, Shawming , VANIAPURA, Vijay M. , PAKULSKI, Ryan M.
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/02 , H05H1/46 , H01L21/311 , H01L21/027
CPC分类号： H01L21/0206 , B08B7/0035 , H01J37/32009 , H01J37/32357 , H01J37/32449 , H01J37/32651 , H01J2237/334 , H01L21/0273
摘要： Systems, methods, and apparatus for processing a substrate in a plasma processing apparatus using a variable pattern separation grid are provided. In one example implementation, a plasma processing apparatus can have a plasma chamber and a processing chamber separated from the plasma chamber. The apparatus can further include a variable pattern separation grid separating the plasma chamber and the processing chamber. The variable pattern separation grid can include a plurality grid plates. Each grid plate can have a grid pattern with one or more holes. At least one of the plurality of grid plates is movable relative to the other grid plates in the plurality of grid plates such that the variable pattern separation grid can provide a plurality of different composite grid patterns.
摘要翻译：提供了用于使用可变图案分离栅格在等离子体处理设备中处理衬底的系统，方法和设备。在一个示例实施方式中，等离子体处理装置可具有等离子体室和与等离子体室分离的处理室。该设备可以进一步包括分离等离子体腔室和处理腔室的可变图案分离栅格。可变图案分离网格可以包括多个网格板。每个网格板可以具有带有一个或多个孔的网格图案。多个格栅板中的至少一个可相对于多个格栅板中的其他格栅板移动，使得可变图案分离格栅可提供多个不同的复合格栅图案。

3. 发明申请

WO2019240907A1 METHOD FOR PROCESSING A WORKPIECE USING A MULTI-CYCLE THERMAL TREATMENT PROCESS 审中-公开
公开(公告)号：WO2019240907A1
公开(公告)日：2019-12-19
申请号：PCT/US2019/032811
申请日：2019-05-17
申请人： MATTSON TECHNOLOGY, INC. , BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY, CO., LTD
发明人： YANG, Michael X. , MA, Shawming
IPC分类号： H01L21/67 , H01L21/683
摘要： A method for processing a workpiece is provided. The method can include placing a workpiece on a susceptor disposed within a processing chamber. The method can include performing a multi-cycle thermal treatment process on the workpiece in the processing chamber. The multi-cycle thermal treatment process can include at least two thermal cycles. Each thermal cycle of the at least two thermal cycles can include performing a first treatment on the workpiece at a first temperature; heating a device side surface of the workpiece to a second temperature in less than one second; performing a second treatment on the workpiece at approximately the second temperature; and cooling the workpiece subsequent to performing the second treatment.

4. 发明申请

WO2018226274A1 PLASMA PROCESSING APPARATUS WITH POST PLASMA GAS INJECTION 审中-公开
公开(公告)号：WO2018226274A1
公开(公告)日：2018-12-13
申请号：PCT/US2018/020098
申请日：2018-02-28
申请人： MATTSON TECHNOLOGY, INC.
发明人： MA, Shawming , NAGORNY, Vladimir , DESAI, Dixit V. , PAKULSKI, Ryan M.
IPC分类号： H01J37/32
摘要： Plasma processing with post plasma gas injection is provided. In one example implementation, a plasma processing apparatus includes a plasma chamber. The apparatus includes a processing chamber separated from the plasma chamber. The processing chamber includes a substrate holder operable to support a workpiece. The apparatus includes a plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a separation grid separating the plasma chamber from the processing chamber. The separation grid can be configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber. The apparatus can include at least one gas port configured to inject a gas into neutral particles passing through the separation grid.

5. 发明申请

WO2021055693A1 METHODS FOR THE TREATMENT OF WORKPIECES 审中-公开
公开(公告)号：WO2021055693A1
公开(公告)日：2021-03-25
申请号：PCT/US2020/051415
申请日：2020-09-18
申请人： MATTSON TECHNOLOGY, INC. , BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD.
发明人： XIE, Ting , CHUNG, Hua , LI, Haochen , LU, Xinliang , MA, Shawming , YANG, Haichun , YANG, Michael X.
IPC分类号： H01L21/02 , H01L21/321 , H01J37/32 , H01L21/67
摘要： Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

6. 发明申请

WO2018052494A1 STRIP PROCESS FOR HIGH ASPECT RATIO STRUCTURE 审中-公开
标题翻译：高纵横比结构的条形工艺
公开(公告)号：WO2018052494A1
公开(公告)日：2018-03-22
申请号：PCT/US2017/033047
申请日：2017-05-17
申请人： MATTSON TECHNOLOGY, INC.
发明人： VANIAPURA, Vijay M. , MA, Shawming , HOU, Li
IPC分类号： H01L21/033 , H01L21/3065 , H01L21/02
摘要： Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures.
摘要翻译：提供了用于从具有高纵横比结构的衬底去除掩模层（例如，掺杂的无定形碳掩模层）的工艺。在一个示例实施方式中，工艺可以包括在衬底上的高纵横比结构的顶端的至少一部分上沉积聚合物层。该工艺可以进一步包括使用等离子剥离工艺去除至少一部分聚合物层和掺杂的无定形碳膜形成衬底。在示例实施例中，沉积聚合物层可以包括用聚合物层堵塞一个或多个高纵横比结构。在示例实施例中，沉积聚合物层可以包括在一个或多个高纵横比结构的侧壁上形成聚合物层。

7. 发明申请

WO2018034715A1 SEPARATION GRID FOR PLASMA CHAMBER 审中-公开
标题翻译：等离子室分离格
公开(公告)号：WO2018034715A1
公开(公告)日：2018-02-22
申请号：PCT/US2017/031847
申请日：2017-05-10
申请人： MATTSON TECHNOLOGY, INC.
发明人： VANIAPURA, Vijay M. , MA, Shawming , NAGORNY, Vladimir , PAKULSKI, Ryan M.
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32357 , H01J37/32422 , H01J37/32522 , H01J37/32623 , H01J37/32724 , H01J2237/32 , H01L21/67248
摘要： Separation grids for plasma processing apparatus are provided. In some embodiments, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a processing chamber. The processing chamber can be separated from the plasma chamber. The apparatus can include a separation grid. The separation grid can separate the plasma chamber and the processing chamber. The apparatus can include a temperature control system. The temperature control system can be configured to regulate the temperature of the separation grid to affect a uniformity of a plasma process on a substrate. In some embodiments, a separation grid can have a varying thickness profile across a cross-section of the separation grid to affect a flow of neutral species through the separation grid.
摘要翻译：提供了等离子体处理设备的分离栅格。在一些实施例中，等离子体处理设备包括等离子体室。等离子体处理装置包括处理室。处理室可以与等离子体室分离。该设备可以包括分离网格。分离栅格可以分离等离子体室和处理室。该设备可以包括温度控制系统。温度控制系统可以被配置为调节分离栅格的温度以影响衬底上的等离子体处理的均匀性。在一些实施方式中，分离格栅可以在分离格栅的横截面上具有变化的厚度分布，以影响通过分离格栅的中性物质的流动。

8. 发明申请

WO2020146558A1 IMPROVED ELECTROSTATIC SHIELD FOR INDUCTIVE PLASMA SOURCES 审中-公开
公开(公告)号：WO2020146558A1
公开(公告)日：2020-07-16
申请号：PCT/US2020/012820
申请日：2020-01-09
申请人： MATTSON TECHNOLOGY, INC. , BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD.
发明人： SAVAS, Stephen, Edward , CHEN, Chen-An , MA, Shawming
IPC分类号： H01J37/32
摘要： Electrostatic shields for inductive plasma sources are provided. In one implementations, a plasma processing apparatus can include a plasma chamber, a dielectric wall forming at least a portion of the plasma chamber, an inductive coupling element located proximate the dielectric wall. The inductive coupling element can generate a plasma in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can further include an electrostatic shield located between the inductive coupling element and the dielectric wall. The electrostatic shield can include a plurality of shield plates, slots, and/or layers.

9. 发明申请

WO2020086288A1 WATER VAPOR BASED FLUORINE CONTAINING PLASMA FOR REMOVAL OF HARDMASK 审中-公开
公开(公告)号：WO2020086288A1
公开(公告)日：2020-04-30
申请号：PCT/US2019/055627
申请日：2019-10-10
申请人： MATTSON TECHNOLOGY, INC. , BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY, CO., LTD
发明人： HOU, Li , VANIAPURA, Vijay M. , MENG, Shuang , MA, Shawming , CHUNG, Hua , SAHAY, Jeyta Anand
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/033 , H01L21/324 , H01L21/67
摘要： Apparatus, systems, and methods for conducting a hardmask (e.g., boron doped amorphous carbon hardmask) removal process on a workpiece are provided. In one example implementation, a method includes supporting a workpiece on a workpiece support in a processing chamber. The method can include generating a plasma from a process gas in a plasma chamber using a plasma source. The plasma chamber can be separated from the processing chamber by a separation grid. The method can include exposing the workpiece to one or more radicals generated in the plasma to perform a plasma strip process on the workpiece to at least partially remove the hardmask layer from the workpiece. The method can include exposing the workpiece to water vapor as a passivation agent during the plasma strip process.

10. 发明申请

WO2018226275A1 PLASMA STRIP TOOL WITH UNIFORMITY CONTROL 审中-公开
公开(公告)号：WO2018226275A1
公开(公告)日：2018-12-13
申请号：PCT/US2018/020103
申请日：2018-02-28
申请人： MATTSON TECHNOLOGY, INC.
发明人： MA, Shawming , NAGORNY, Vladimir , DESAI, Dixit V. , PAKULSKI, Ryan M.
IPC分类号： H01J37/32
摘要： Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber. The apparatus includes a first pedestal in the processing chamber operable to support a workpiece. The first pedestal can define a first processing station. The plasma processing apparatus can include a second pedestal in the processing chamber operable to support a workpiece. The second pedestal can define a second processing station. The apparatus can include a first plasma chamber disposed above the first processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The apparatus can include a second plasma chamber disposed above the second processing station. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.

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