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1. 发明申请

WO2017200845A1 METHOD OF FORMING A P-TYPE LAYER FOR A LIGHT EMITTING DEVICE 审中-公开
标题翻译：形成用于发光装置的P型层的方法
公开(公告)号：WO2017200845A1
公开(公告)日：2017-11-23
申请号：PCT/US2017/032234
申请日：2017-05-11
申请人： LUMILEDS LLC
发明人： WILDESON, Isaac , NELSON, Erik Charles , DEB, Parijat
IPC分类号： H01L29/02 , H01L21/306 , H01L21/02 , H01L21/324
摘要： In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.
摘要翻译：在根据本发明实施例的方法中，生长包括设置在p型区域与n型区域之间的III族氮化物发光层的半导体结构。 p型区埋在半导体结构内。在半导体结构中形成沟槽。沟槽暴露出p型区域。在形成沟槽之后，半导体结构被退火。

2. 发明申请

WO2019050939A1 OPTOELECTRONIC DEVICE AND ADAPTIVE ILLUMINATION SYSTEM USING THE SAME 审中-公开
公开(公告)号：WO2019050939A1
公开(公告)日：2019-03-14
申请号：PCT/US2018/049533
申请日：2018-09-05
申请人： LUMILEDS LLC
发明人： NELSON, Erik Charles , WILDESON, Isaac , DEB, Parijat , VAMPOLA, Kenneth
IPC分类号： H05B33/08
摘要： An apparatus is disclosed that includes a segmented light-emitting diode (LED) chip having a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections. Each section may include at least one first LED and at least one second LED. A controller may be configured to apply a forward bias to each of the first LEDs and apply a reverse bias to each of the second LEDs. The controller may change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section. The apparatus may be an automotive headlight that includes an optical unit including a plurality of optical elements, each optical element having a different central direction. Each section may be aligned with a different respective optical element.

3. 发明申请

WO2022211989A1 THIN COMPACT WAVELENGTH CONVERTING STRUCTURE FOR pcLED 审中-公开
公开(公告)号：WO2022211989A1
公开(公告)日：2022-10-06
申请号：PCT/US2022/019322
申请日：2022-03-08
申请人： LUMILEDS LLC
发明人： BECHTEL, Hans-Helmut , DEB, Parijat , VAN DER VEEN, Niels Jeroen
IPC分类号： H01L33/50 , H01L33/48 , H01L25/075
摘要： This specification discloses pcLEDs in which the wavelength converting structure comprises one or more layers of phosphor particles disposed on a transparent substrate at high packing density. The particles are coated with an inorganic non-absorbing layer which mechanically stabilizes the phosphor particle layers and provides a thermally conductive connection between the phosphor particles. The wavelength converting structure is attached to a semiconductor LED die with the transparent substrate of the wavelength converting structure facing away from the die by a thin glue layer that bonds a light emitting surface of the die to the phosphor particle layers. Methods for fabricating such pcLEDs are also disclosed.

4. 发明申请

WO2017201363A1 METHODS FOR USING REMOTE PLASMA CHEMICAL VAPOR DEPOSITION (RP-CVD) AND SPUTTERING DEPOSITION TO GROW LAYERS IN LIGHT EMITTING DEVICES 审中-公开
标题翻译：在发光装置中使用远程等离子体化学气相沉积（RP-CVD）和溅射沉积成长层的方法
公开(公告)号：WO2017201363A1
公开(公告)日：2017-11-23
申请号：PCT/US2017/033466
申请日：2017-05-19
申请人： LUMILEDS LLC
发明人： WILDESON, Isaac , DEB, Parijat , NELSON, Erik Charles , KOBAYASHI, Junko
IPC分类号： H01L33/06 , H01L21/02 , H01L33/00 , H01L33/32
摘要： Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.
摘要翻译：这里描述的是使用远程等离子体化学气相沉积（RP-CVD）和溅射沉积来生长用于发光器件的层的方法。一种方法包括在生长衬底上生长发光器件结构，并且使用RP-CVD和溅射沉积中的至少一种在发光器件结构上生长隧道结。隧道结包括与p型区直接接触的p ++层，其中通过使用RP-CVD和溅射沉积中的至少一种生长p ++层。用于生长器件的另一种方法包括使用RP-CVD和溅射沉积中的至少一种在生长衬底上生长p型区域，并且在p型区域上生长另外的层。用于生长器件的另一种方法包括使用RP-CVD和在p型区域上的溅射沉积中的至少一种生长发光区域和n型区域。

5. 发明申请

WO2021126445A1 LIGHT EMITTING DIODE DEVICE WITH HIGH DENSITY TEXTURE 审中-公开
公开(公告)号：WO2021126445A1
公开(公告)日：2021-06-24
申请号：PCT/US2020/060961
申请日：2020-11-18
申请人： LUMILEDS LLC
发明人： WILDESON, Isaac , LOPEZ, Toni , ARMITAGE, Robert , DEB, Parijat
IPC分类号： H01L33/00 , H01L21/02 , H01L33/20 , H01L21/02403 , H01L21/02414 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02472 , H01L21/0254 , H01L21/02639 , H01L33/007 , H01L33/22 , H01L33/32
摘要： Light emitting diode (LED) devices comprise: a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features; a selective layer comprising a dielectric material located on the surfaces of the integral features, wherein there is an absence of the selective layer on the base surface; and a III-nitride layer comprising a III-nitride material on the selective layer and the base surface.

6. 发明申请

WO2019022960A1 STRAINED ALGAINP LAYERS FOR EFFICIENT ELECTRON AND HOLE BLOCKING IN LIGHT EMITTING DEVICES 审中-公开
公开(公告)号：WO2019022960A1
公开(公告)日：2019-01-31
申请号：PCT/US2018/041771
申请日：2018-07-12
申请人： LUMILEDS LLC
发明人： BHUSAL, Lekhnath , CHUNG, Theodore , DEB, Parijat
IPC分类号： H01L33/14 , H01L33/04 , H01L33/12 , H01S5/34 , H01L33/30
摘要： A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, wherein at least a portion of the electron blocking layer is arranged to have a tensile strain, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.

7. 发明申请

WO2018081635A1 METHODS FOR GROWING LIGHT EMITTING DEVICES UNDER ULTRA-VIOLET ILLUMINATION 审中-公开
标题翻译：用于在超紫外照射下生长发光装置的方法
公开(公告)号：WO2018081635A1
公开(公告)日：2018-05-03
申请号：PCT/US2017/058867
申请日：2017-10-27
申请人： LUMILEDS LLC
发明人： ISHIKAWA, Tsutomu , WILDESON, Isaac , NELSON, Erik Charles , DEB, Parijat
IPC分类号： H01L33/00 , H01L21/02 , H01L21/268 , H01L33/32
摘要： Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg-H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.
摘要翻译：这里描述的是用于在紫外（UV）照射下生长发光器件的方法。一种方法包括在UV照射下在III族氮化物p型层上生长III族氮化物n型层。另一种方法包括在生长衬底上生长发光器件结构并在发光器件结构上生长隧道结，其中在UV照射下生长某些层。另一种方法包括在III族氮化物p型层上方形成III族氮化物隧道结n型层以形成隧道结发光二极管。 III族氮化物隧道结n型层的表面在初始阶段期间在照明下完成，并且在没有照明的情况下完成剩余的形成。紫外光的光子能量高于III族氮化物p型层的带隙能量。紫外照射抑制了由沉积室中存在的氢引起的III族氮化物p型层内的Mg-H复合物的形成。

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