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1. 发明申请

WO2009017829A1 CONTROL OF STRAIN THROUGH THICKNESS IN EPITAXIAL FILMS VIA VERTICAL NANOCOMPOSITE HETEROEPITAXY 审中-公开
标题翻译：通过垂直纳米复合体异位置控制外膜中的厚度
公开(公告)号：WO2009017829A1
公开(公告)日：2009-02-05
申请号：PCT/US2008/009337
申请日：2008-08-01
申请人： LOS ALAMOS NATIONAL SECURITY, LLC , DRISCOLL, Judith, L. , JIA, Quanxi , ZERRER, Patrick
发明人： DRISCOLL, Judith, L. , JIA, Quanxi , ZERRER, Patrick
IPC分类号： H01L21/02 , H01L21/20 , C30B25/18
CPC分类号： C23C14/08 , C23C14/28 , C30B25/18 , H01L28/55
摘要： A two-dimensional vertical heteroepitaxial strain controlled composite is grown. The strain-controlling phase can be benign in all other respects so that the functional properties of the parent phase are unchanged, improved/enhanced, and/or manipulated. The new composite is advantageous because there is no need for expensive specialized crystals and because there are no thickness limitations.
摘要翻译：生长二维垂直异质外延应变控制复合材料。应变控制阶段在所有其他方面可以是良性的，使得母体相的功能特性不变，改善/增强和/或操纵。新的复合材料是有利的，因为不需要昂贵的专用晶体，因为没有厚度限制。

2. 发明申请

WO2012094266A1 MULTIFERROICS THAT ARE BOTH FERROELECTRIC AND FERROMAGNETIC AT ROOM TEMPERATURE 审中-公开
标题翻译：在室温下具有两种电磁和非线性的多功能
公开(公告)号：WO2012094266A1
公开(公告)日：2012-07-12
申请号：PCT/US2012/000016
申请日：2012-01-06
申请人： LOS ALAMOS NATIONAL SECURITY, LLC , DRISCOLL, Judith, L. , JIA, Quanxi
发明人： DRISCOLL, Judith, L. , JIA, Quanxi
IPC分类号： H01L41/18
CPC分类号： C30B29/22 , C01G49/009 , C30B23/02 , C30B23/025 , Y10T428/24975 , Y10T428/325
摘要： Multiferroic articles including highly resistive, strongly ferromagnetic strained thin films of BiFeo.5Mno.5O3 ("BFMO") on (001) strontium titanate and Nb-doped strontium titanate substrates were prepared. The films were tetragonal with high epitaxial quality and phase purity. The magnetic moment and coercivity values at room temperature were 90 emu/cc (H = 3 kOe) and 274 Oe, respectively. The magnetic transition temperature was strongly enhanced up to approximately 600 K, which is approximately 500 K higher than for pure bulk BiMn03.
摘要翻译：制备了（001）钛酸锶和Nb掺杂的钛酸锶衬底上的BiFeo.5Mno.5O3（“BFMO”）的高电阻，强铁磁应变薄膜的多铁制品。该薄膜是具有高外延质量和相纯度的四方晶。室温下的磁矩和矫顽力值分别为90emu / cc（H = 3kOe）和274Oe。磁转变温度大大提高至约600K，比纯体积BiMn03高约500K。

3. 发明申请

WO2011031290A1 TUNABLE TERAHERTZ RADIATION SOURCE 审中-公开
标题翻译： TUNABLE TERAHERTZ辐射源
公开(公告)号：WO2011031290A1
公开(公告)日：2011-03-17
申请号：PCT/US2010/002217
申请日：2010-08-11
申请人： LOS ALAMOS NATIONAL SECURITY, LLC , BOULAEVSKII, Lev , FELDMANN, David, M. , JIA, Quanxi , KOSHELEV, Alexei , MOODY, Nathan, A.
发明人： BOULAEVSKII, Lev , FELDMANN, David, M. , JIA, Quanxi , KOSHELEV, Alexei , MOODY, Nathan, A.
IPC分类号： H01L29/06
CPC分类号： H01L39/225 , H03B15/00
摘要： Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.
摘要翻译：太赫兹辐射源和产生太赫兹辐射的方法，所述源包括结堆叠，所述接合堆叠包括包含多个自同步内在约瑟夫逊结的结晶材料; 与所述结晶材料的两个相对侧接触的导电材料; 以及设置在所述结晶材料和所述导电材料两者的至少一部分上的基底层，其中所述结晶材料具有平行于所述基底层的c轴，并且其中所述源发射至少1mW的功率。

4. 发明申请

WO2009134698A1 PRECURSORS FOR THE POLYMER-ASSISTED DEPOSITION OF FILMS 审中-公开
标题翻译：聚合物辅助沉积膜的前驱体
公开(公告)号：WO2009134698A1
公开(公告)日：2009-11-05
申请号：PCT/US2009/041716
申请日：2009-04-24
申请人： LOS ALAMOS NATIONAL SECURITY, LLC , MCCLESKEY, Thomas, M. , BURRELL, Anthony, K. , JIA, Quanxi , LIN, Yuan
发明人： MCCLESKEY, Thomas, M. , BURRELL, Anthony, K. , JIA, Quanxi , LIN, Yuan
IPC分类号： C08K3/00
CPC分类号： C08G73/0206 , C08K3/10
摘要： A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.
摘要翻译：提出了用于沉积金属氧化物膜的聚合物辅助沉积工艺。该方法包括一种或多种金属前体和对于一种或多种金属前体具有结合特性的可溶性聚合物的溶液。在涂覆操作之后，将所得涂层在高温下加热以产生金属氧化物膜。这样的膜可以在结构上外延，并且可以具有光学质量。该方法可以是无机溶剂。

5. 发明申请

WO2008143922A1 POLYMER-ASSISTED DEPOSITION OF FILMS 审中-公开
标题翻译：聚合物辅助沉积膜
公开(公告)号：WO2008143922A1
公开(公告)日：2008-11-27
申请号：PCT/US2008/006218
申请日：2008-05-15
申请人： LOS ALAMOS NATIONAL SECURITY, LLC , MCCLESKEY, Thomas, M. , BURRELL, Anthony, K. , JIA, Quanxi , LIN, Yuan
发明人： MCCLESKEY, Thomas, M. , BURRELL, Anthony, K. , JIA, Quanxi , LIN, Yuan
IPC分类号： B05D3/02 , B05D3/00
CPC分类号： C23C26/00 , C23C18/122 , C23C18/1279 , C23C18/1283
摘要： A polymer assisted deposition process for deposition of metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be conformal on a variety of substrates including non-planar substrates. In some instances, the films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.
摘要翻译：提出了用于沉积金属氮化物膜等的聚合物辅助沉积工艺。该方法包括一种或多种金属前体和对于一种或多种金属前体具有结合特性的可溶性聚合物的溶液。在涂覆操作之后，将所得涂层在合适的气氛下在高温下加热，得到金属氮化物膜等。这样的膜可以在包括非平面基底的各种基底上共形。在一些情况下，膜可以在结构上外延，并且可以具有光学质量。该方法可以是无机溶剂。

6. 发明申请

WO2011094559A1 PREPARATION OF METAL CARBIDE FILMS 审中-公开
标题翻译：金属碳膜的制备
公开(公告)号：WO2011094559A1
公开(公告)日：2011-08-04
申请号：PCT/US2011/022950
申请日：2011-01-28
申请人： LOS ALAMOS NATIONAL SECURITY, LLC , ZOU, Guifu , LUO, Hongmei , JIA, Quanxi , MCCLESKEY, Thomas Mark , BURRELL, Anthony, K.
发明人： ZOU, Guifu , LUO, Hongmei , JIA, Quanxi , MCCLESKEY, Thomas Mark , BURRELL, Anthony, K.
IPC分类号： B32B9/00
CPC分类号： C23C18/1204 , C23C18/127 , C23C18/1279
摘要： A coating solution including a polymer and a metal selected from scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, boron, aluminum and silicon can be deposited on a substrate and then exposed at elevated temperature to a reducing atmosphere including a gaseous carbon source. Solvent evaporates and the polymer decomposes and a metal carbide film forms on the substrate. Metal carbide films of titanium carbide, vanadium carbide, niobium carbide, tantalum carbide, tungsten carbide, silicon carbide, and several mixed carbides were prepared. X-Ray diffraction patterns of metal carbide films provide evidence of a highly ordered structure and excellent alignment with the substrate. A composite film of niobium carbide and carbon nanotubes was also prepared.
摘要翻译：包括聚合物和选自钪，钇，钛，锆，铪，钒，铌，钽，铬，钼，钨，硼，铝和硅的金属的涂层溶液可以沉积在基材上，然后在高温下包括气态碳源的还原气氛。溶剂蒸发并且聚合物分解，并且在基材上形成金属碳化物膜。制备碳化钛，碳化钒，碳化铌，碳化钽，碳化钨，碳化硅和几种混合碳化物的金属碳化物膜。金属碳化物膜的X射线衍射图形提供了高度有序结构和与衬底的优异对准的证据。还制备了碳化铌和碳纳米管的复合膜。

7. 发明申请

WO2008143723A3 WIDE BAND GAP SEMICONDUCTOR TEMPLATES 审中-公开
公开(公告)号：WO2008143723A3
公开(公告)日：2008-11-27
申请号：PCT/US2008/001903
申请日：2008-02-12
申请人： LOS ALAMOS NATIONAL SECURITY, LLC , ARENDT, Paul, N. , STAN, Liliana , JIA, Quanxi , DEPAULA, Raymond, F. , USOV, Igor, O.
发明人： ARENDT, Paul, N. , STAN, Liliana , JIA, Quanxi , DEPAULA, Raymond, F. , USOV, Igor, O.
IPC分类号： H01B1/02
摘要： The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

8. 发明申请

WO2010014060A1 COATED SUPERCONDUCTING MATERIALS 审中-公开
标题翻译：涂层超导材料
公开(公告)号：WO2010014060A1
公开(公告)日：2010-02-04
申请号：PCT/US2008/009202
申请日：2008-07-29
申请人： LOS ALAMOS NATIONAL SECURITY, LLC , JIA, Quanxi , USOV, Igor, Olegovich , STAN, Liliana , DEPAULA, Raymond, F.
发明人： JIA, Quanxi , USOV, Igor, Olegovich , STAN, Liliana , DEPAULA, Raymond, F.
IPC分类号： H01L39/00
CPC分类号： H01L39/2461
摘要： A superconducting article comprising a substrate and a single composite layer deposited onto said substrate, wherein said single composite layer comprises Y 2 O 3 and Al 2 O3, has a thickness of from about 20 nm to about 700 nm, and wherein the ratio of aluminum to yttrium is from about 10: 1 to about 1 : 10; and wherein said superconducting article has a critical current density of at least 1 MA/cm 2 .
摘要翻译：一种超导制品，其包含沉积在所述基底上的基底和单一复合层，其中所述单一复合层包括Y 2 O 3和Al 2 O 3，其厚度为约20nm至约700nm，并且其中铝与钇的比率为约 10：1至约1：10; 并且其中所述超导制品具有至少1MA / cm 2的临界电流密度。

9. 发明申请

WO2009020646A1 BUFFER LAYERS FOR COATED CONDUCTORS 审中-公开
标题翻译：涂层导体缓冲层
公开(公告)号：WO2009020646A1
公开(公告)日：2009-02-12
申请号：PCT/US2008/009516
申请日：2008-08-07
申请人： LOS ALAMOS NATIONAL SECURITY, LLC , STAN, Liliana , JIA, Quanxi , FOLTYN, Stephen, R.
发明人： STAN, Liliana , JIA, Quanxi , FOLTYN, Stephen, R.
IPC分类号： H01L39/00 , H01L29/06 , B32B9/00
CPC分类号： H01L39/2461 , Y10S505/701
摘要： A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.
摘要翻译：提供了一种复合结构，其包括基底基板，在基底基板上的取向为IBAD的材料，以及在IBAD取向材料上选自稀土锆酸盐和稀土铪的立方金属氧化物材料。此外，提供了一种制品，其包括基底基材，在基底基材上的取向为IBAD的材料，在IBAD取向材料上选自稀土锆酸盐和稀土铪的立方晶金属氧化物材料，以及厚度为立方金属氧化物材料。最后，提供了一种超导制品，其包括基底基材，在基底基材上的IBAD取向材料，在IBAD取向材料上选自稀土锆酸盐和稀土铪的立方金属氧化物材料，以及钇钡铜氧化物材料在立方金属氧化物材料上。

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