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    • 3. 发明申请
    • DISC TILT DETECTING DEVICE
    • DISC倾斜检测装置
    • WO2005073962A1
    • 2005-08-11
    • PCT/IB2005/050228
    • 2005-01-19
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.VAN SOMEREN, Bob
    • VAN SOMEREN, Bob
    • G11B7/095
    • G11B7/0956
    • The invention relates to a device (201) for scanning an optical disc (202), such as a CD or DVD, the device (201) comprising a radial error detection unit (210) for determining a radial tracking error signal (e.g. a RPP or DTD-signal) while moving radially across a pattern (203) of substantially parallel data tracks on the disc (202). The hereby obtained periodic signal is analyzed by a tilt detection circuit (211) for detecting disc tilt. Each period of the periodic signal corresponds to a pitch of the data tracks. The tilt detection circuit (211) is arranged for detecting an asymmetry in the periodic signal. In an embodiment the asymmetry is detected by integrating the periodic signal over an integer number of periods.
    • 本发明涉及一种用于扫描诸如CD或DVD的光盘(202)的设备(201),该设备(201)包括径向误差检测单元(210),用于确定径向跟踪误差信号(例如RPP 或DTD信号),同时径向地跨越盘(202)上的基本上平行的数据轨道的图案(203)。 由此获得的周期信号由用于检测盘倾斜的倾斜检测电路(211)分析。 周期信号的每个周期对应于数据轨迹的间距。 倾斜检测电路(211)用于检测周期信号的不对称性。 在一个实施例中,通过在整数个周期上对周期信号进行积分来检测不对称性。
    • 5. 发明申请
    • WRITING SCHEME FOR AN OPTICAL RECORDING MEDIUM
    • 光记录介质的写入方案
    • WO2003083848A1
    • 2003-10-09
    • PCT/IB2003/000879
    • 2003-03-05
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.VAN SOMEREN, BobCOENE, Willem, M., J., M.
    • VAN SOMEREN, BobCOENE, Willem, M., J., M.
    • G11B7/013
    • G11B7/24085G11B7/24088
    • The present invention relates to a writing scheme for writing an information to an optical recording medium by forming mark areas, e.g. pit areas, corresponding to a predetermined state of said information on a recording surface of said optical recording medium. The writing scheme is adapted to modulate the shape of said mark areas in a predetermined manner so as to obtain incomplete mark areas which do not fully cover the size which is allocated to the channel bit to be written. Thereby, the problem of folding can be prevented or alleviated during the writing or mastering process due to the fact that the incomplete mark areas, e.g. pit effects, do not form large mirror surfaces when combined in clusters of adjacent pits. The incomplete mark areas may be obtained by modulating their shape in any manner suitable to reduce the reflection surface and/or to increase diffraction. Additionally, a multi-level modulation or a binary modulation may be achieved by controlling the shape or number of the incomplete mark areas, respectively, in accordance with the level of a multi-level coded information.
    • 本发明涉及一种通过形成标记区域来将信息写入光学记录介质的写入方案。 凹坑区域,对应于所述光学记录介质的记录表面上的所述信息的预定状态。 写入方案适于以预定方式调制所述标记区域的形状,以便获得不完全覆盖被分配给要写入的通道位的大小的不完整标记区域。 因此,由于以下事实,可以防止或减轻在书写或母盘制作过程中折叠的问题: 在相邻凹坑的簇中组合时,不会形成大的镜面。 可以通过以适于减少反射表面和/或增加衍射的任何方式调制其形状来获得不完整的标记区域。 此外,可以根据多级编码信息的级别分别控制不完整标记区域的形状或数量来实现多电平调制或二进制调制。
    • 8. 发明申请
    • HIGH TRACK DENSITY SUPER RESOLUTION MO-ROM MEDIUM
    • 高跟踪密度超分辨率MO-ROM介质
    • WO2004032123A1
    • 2004-04-15
    • PCT/IB2003/004006
    • 2003-09-12
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.VERSCHUREN, Coen, A.VAN SOMEREN, Bob
    • VERSCHUREN, Coen, A.VAN SOMEREN, Bob
    • G11B7/007
    • G11B7/00718G11B7/0901G11B7/0938G11B7/24079G11B11/10515G11B11/10576G11B11/10578G11B11/10584
    • The invention relates to a MO-ROM medium with a small track width, wherein data is recorded at least on one side of a disk wherein a data side has on a substrate at least a recording layer wherein said data is recorded and at least a read-out layer to reproduce said data recorded in said recording layer during read-out. Recorded data is arranged within adjacent data tracks on said disk and a recording density within a data track is beyond the diffraction limited density of the focussing optics. By arrangement of the data tracks in groups of several adjacent data tracks wherein a track width within a data track group is at least less than the diffraction limit of the focussing optics and providing reference means for tracking a selected data track group with said read-out laser beam a specific data track of each data track group can be read-out by adjusting a proper offset value within the radial tracking unit.
    • 本发明涉及一种具有小轨道宽度的MO-ROM介质,其中至少在盘的一侧记录数据,其中数据侧在衬底上至少记录了所述数据的记录层,并且至少读取 输出层,用于在读出期间再现记录在所述记录层中的所述数据。 记录的数据被布置在所述盘上的相邻数据轨道内,并且数据轨道内的记录密度超过聚焦光学器件的衍射受限密度。 通过以数个相邻数据磁道的组的数据磁道的排列,其中数据磁道组内的磁道宽度至少小于聚焦光学器件的衍射极限,并提供用于使用所述读出跟踪所选数据磁道组的参考装置 可以通过调整径向跟踪单元内的适当偏移值来读取每个数据轨道组的特定数据轨道的激光束。
    • 9. 发明申请
    • TUNABLE SEMICONDUCTOR LASER DEVICE AND METHOD FOR OPERATING A TUNABLE SEMICONDUCTOR LASER DEVICE
    • 可动半导体激光器件及其操作方法
    • WO2012074382A1
    • 2012-06-07
    • PCT/NL2011/050775
    • 2011-11-11
    • EUPHOENIX B.V.ENGELMANN, MichaelVAN SOMEREN, Bob
    • ENGELMANN, MichaelVAN SOMEREN, Bob
    • H01S5/06H01S5/12
    • H01S5/06H01S5/0607H01S5/1234H01S5/1237H01S5/22
    • The invention provides a semiconductor laser device comprising -a semiconductor structure (10), having end surfaces (la, lb) on opposing sides along a longitudinal axis (2) being formed to have in an active region layer (12) between a top (4) and a bottom surface (5) of the structure; -a longitudinal structure (20) provided on the top surface (4) to receive an electrical current through a contact surface (22); -a first longitudinal interdigitated transducer, IDT, (35) provided on the top surface (4), said first IDT (35) extending longitudinally in a direction parallel to the longitudinal axis (2) and being arranged to generate a surface acoustic wave, SAW, in a direction parallel to the longitudinal axis (2), wherein the first IDT (35) is arranged parallel to the longitudinal structure (20) with the IDT (35), the centers of the IDT (35) and the longitudinal structure being separated by a distance along the lateral axis (3). Electrical current is supplied to the active region via a top contact (22a) and a bottom contact and to the IDT (35) via two contacts (22b, 22c). The longitudinal structure (20) may be a ridge.
    • 本发明提供一种包括半导体结构(10)的半导体激光器件,其沿着纵向轴线(2)的相对侧上具有端面(1a,1b),其形成为在顶部(12)之间具有有源区域层 4)和所述结构的底表面(5); - 设置在所述顶表面(4)上以接收通过接触表面(22)的电流的纵向结构(20); - 设置在所述顶表面(4)上的第一纵向叉指传感器(IDT)(35),所述第一IDT(35)沿与所述纵向轴线(2)平行的方向纵向延伸并被布置成产生表面声波, SAW在平行于纵向轴线(2)的方向上,其中第一IDT(35)与IDT(35)平行于纵向结构(20)布置,IDT(35)的中心和纵向结构 沿着横轴(3)分开一段距离。 电流通过顶部接触件(22a)和底部接触件通过两个触点(22b,22c)提供给有源区域。 纵向结构(20)可以是脊。
    • 10. 发明申请
    • TUNABLE SEMICONDUCTOR DEVICE AND METHOD FOR MAKING TUNABLE SEMICONDUCTOR DEVICE
    • 可控半导体器件及制造可控硅半导体器件的方法
    • WO2013178262A1
    • 2013-12-05
    • PCT/EP2012/060173
    • 2012-05-30
    • EUPHOENIX BVVAN SOMEREN, Bob
    • VAN SOMEREN, Bob
    • H01S5/06H01S5/22H01S5/30H01S5/32H01S5/12H01S5/20
    • H01S5/1234H01S5/0607H01S5/1237H01S5/2031H01S5/22H01S5/305H01S5/3211H01S5/343
    • Method and apparatus for a tunable laser device. In one aspect, a tunable laser device (100) comprises a first doped cladding layer (104) on a semiconductor substrate (102), a first waveguide layer (106) of essentially undoped piezoelectric material on a top surface of the first doped cladding layer (104), an active layer (108) on the top surface of the first waveguide layer (106), a second waveguide layer (110) of essentially undoped piezoelectric material on the top surface of the active layer (108), a longitudinal structure (114) parallel to a longitudinal axis of the semiconductor device on a top surface (113) of the second waveguide layer (110) comprising a doped semiconductor material, and a longitudinal interdigitated transducer IDT (116,118) formed on the top surface (113) of the second waveguide layer (110) or on the bottom surface of the first waveguide layer, the IDT extending longitudinally in a direction parallel to the longitudinal axis and being arranged to, in response to a signal from a signal generator, generate a surface acoustic wave (SAW) in a direction parallel to the longitudinal axis.
    • 可调谐激光装置的方法和装置。 一方面,可调激光器件(100)包括在半导体衬底(102)上的第一掺杂包层(104),在第一掺杂包覆层的顶表面上的基本上未掺杂的压电材料的第一波导层(106) (104),在所述第一波导层(106)的顶表面上的有源层(108),在所述有源层(108)的顶表面上的基本上未掺杂的压电材料的第二波导层(110),纵向结构 (114),在包括掺杂半导体材料的第二波导层(110)的顶表面(113)上平行于半导体器件的纵向轴线,以及形成在顶表面(113)上的纵向交叉换能器IDT(116,118) 的第二波导层(110)或第一波导层的底表面上,IDT在平行于纵向轴线的方向上纵向延伸并且被布置成响应于来自信号发生器的信号而产生为 在与纵轴平行的方向上的表面声波(SAW)。