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1. 发明申请

WO2004086508A1 IMPROVED GATE ELECTRODE FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于半导体器件的改进的栅极电极
公开(公告)号：WO2004086508A1
公开(公告)日：2004-10-07
申请号：PCT/IB2004/050321
申请日：2004-03-23
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , SURDEANU, Radu, C. , STOLK, Peter, A.
发明人： SURDEANU, Radu, C. , STOLK, Peter, A.
IPC分类号： H01L29/49
CPC分类号： H01L29/4925
摘要： The present invention provides an MIS type semiconductor device, comprising a semiconductor substrate and a gate electrode formed on the gate insulating film and formed of gate material. The gate electrode comprises: a first layer of activated crystalline gate material having a first side oriented towards a substrate and a second side oriented away from the substrate, the first layer of activated crystalline gate material having a doping level of 10 19 ions/cm 3 or higher, and a second layer of gate material at the second side of the first layer of activated crystalline gate material. The present invention also provides a method for making such a device.
摘要翻译：本发明提供了一种MIS型半导体器件，包括半导体衬底和形成在栅极绝缘膜上并由栅极材料形成的栅电极。栅极电极包括：第一激活晶体栅极材料层，其具有朝向衬底取向的第一侧和远离衬底取向的第二侧，所述第一层激活的晶体栅极材料具有10 / cm 3以上，第二层栅极材料在第一层激活的结晶栅极材料的第二侧。本发明还提供了制造这种装置的方法。

2. 发明申请

WO2003046967A2 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2003046967A2
公开(公告)日：2003-06-05
申请号：PCT/IB2002/004881
申请日：2002-11-20
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , STOLK, Peter, A.
发明人： STOLK, Peter, A.
IPC分类号： H01L21/268
CPC分类号： H01L29/66575 , H01L21/26513 , H01L21/2652 , H01L21/268 , H01L21/324
摘要： In the method of manufacturing a semiconductor device (1) with a semiconductor body (2), a doped zone (3) is formed in the semiconductor body (2). The semiconductor body (2) has a crystalline surface region (4), which crystalline surface region (4) is at least partly amorphized so as to form an amorphous surface layer (5). The amorphization is achieved by irradiating the surface (6) with a radiation pulse (7) which is absorbed by the crystalline surface region (4). The radiation pulse (7) has a wavelength which is chosen such that the radiation is absorbed by the crystalline surface region (4), and the energy flux of the radiation pulse (7) is chosen such that the crystalline surface layer (5) is melted. The method is useful for making ultra-shallow junctions.
摘要翻译：在制造具有半导体本体（2）的半导体器件（1）的方法中，在半导体本体（2）中形成掺杂区（3）。半导体本体（2）具有晶体表面区域（4），该晶体表面区域（4）至少部分非晶化，以形成非晶表面层（5）。非晶化是通过用由结晶表面区域（4）吸收的辐射脉冲（7）照射表面（6）来实现的。辐射脉冲（7）具有选择为使得辐射被结晶表面区域（4）吸收的波长，并且选择辐射脉冲（7）的能量通量使得晶体表面层（5）为融化了。该方法可用于制造超浅结。

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