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1. 发明申请

WO2004095564A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH A BIPOLAR TRANSISTOR 审中-公开
标题翻译：用双极晶体管制造半导体器件的方法
公开(公告)号：WO2004095564A1
公开(公告)日：2004-11-04
申请号：PCT/IB2004/050497
申请日：2004-04-23
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , MAGNEE, Petrus, H., C. , HUETING, Raymond, J., E. , MELAI, Joost , IN 'T ZANDT, Michael, A., A. , DONKERS, Johannes, J., T., M.
发明人： MAGNEE, Petrus, H., C. , HUETING, Raymond, J., E. , MELAI, Joost , IN 'T ZANDT, Michael, A., A. , DONKERS, Johannes, J., T., M.
IPC分类号： H01L21/331
CPC分类号： H01L29/66242 , H01L21/76895 , H01L29/7378
摘要： Method of manufacturing a semiconductor device with a bipolar transistor, in which method, on a surface (3) of a silicon body comprising a surface layer (2) of a first conductivity type lying on a heavily doped contact layer (6) of the same, first conductivity type, a first layer of semiconductor material (8) is formed in which layer the base (21) is to be formed. In this method, a mask (9) is formed on the first layer of semiconductor material at the location of the base to be formed, after which non-covered parts of the first layer of semiconductor material are successively etched away and replaced by a layer of doped amorphous or polycrystalline silicon. Next, the mask is removed, whereby a window (17) is formed at the location of the base in which a second layer of semiconductor material (19) of the first conductivity type is deposited for forming the emitter (20) of the transistor. Thus a transistor is formed, the base of which is contacted by a highly conductive base contact (15) formed in the layer of doped amorphous or polycrystalline silicon.
摘要翻译：制造具有双极性晶体管的半导体器件的方法，在该方法中，在硅体的表面（3）上，该硅体包括位于其上的重掺杂接触层（6）上的第一导电类型的表面层（2），第一导电型，形成第一半导体材料层（8），其中将形成基底（21）。在该方法中，在要形成的基底的位置处，在第一半导体材料层上形成掩模（9），之后将第一半导体材料层的未覆盖部分相继蚀刻掉，并由层的掺杂非晶或多晶硅。接下来，去除掩模，由此在基底的位置处形成窗口（17），在该位置沉积第一导电类型的第二半导体材料层（19）以形成晶体管的发射极（20）。因此，形成晶体管，其基极由形成在掺杂的非晶或多晶硅层中的高导电性基极接触（15）接触。

2. 发明申请

WO2007057803A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED WITH SUCH A METHOD 审中-公开
标题翻译：制造半导体器件的方法和采用这种方法获得的半导体器件
公开(公告)号：WO2007057803A1
公开(公告)日：2007-05-24
申请号：PCT/IB2006/053996
申请日：2006-10-29
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , MELAI, Joost , HIJZEN, Erwin , MEUNIER-BEILLARD, Philippe , DONKERS, Johannes, J., T., M.
发明人： MELAI, Joost , HIJZEN, Erwin , MEUNIER-BEILLARD, Philippe , DONKERS, Johannes, J., T., M.
IPC分类号： H01L21/331
CPC分类号： H01L29/66242 , H01L29/66287
摘要： The invention relates to a method of manufacturing a semiconductor device (10) with a substrate (11) and a semiconductor body (12) which is provided with at least one bipolar transistor having an emitter region (1), a base region (2) and a collector region (3), wherein in the semiconductor body (12) a first semiconductor region (13) is formed that forms one (3) of the collector and emitter regions (1,3) and on the surface of the semiconductor body (12) a stack of layers is formed comprising a first insulating layer (4), a polycrystalline semiconductor layer (5) and a second insulating layer (6) in which stack an opening (7) is formed, after which by non-selective epitaxial growth a further semiconductor layer (22) is deposited of which a monocrystalline horizontal part on the bottom of the opening (7) forms the base region (2) and of which a polycrystalline vertical part (2A) on a side face of the opening (7) is connected to the polycrystalline semiconductor layer (5), after which spacers (S) are formed parallel to the side face of the opening (7) and a second semiconductor region (31) is formed between said spacers (S) forming the other one (1) of the emitter and collector regions (1,3). According to the invention the above method is characterized in that before the further semiconductor layer (22) is deposited, the second insulating layer (6) is provided with an end portion (6A) that viewed in projection overhangs an end portion (5A) of the underlying semiconductor layer (5). In this way bipolar transistor devices can be obtained with good high frequency properties in a cost effective manner.
摘要翻译：本发明涉及一种制造半导体器件（10）的方法，所述半导体器件（10）具有衬底（11）和半导体本体（12），所述半导体器件（12）具有至少一个具有发射极区域（1），基极区域（2），和集电极区域（3），其中在所述半导体本体（12）中形成第一半导体区域（13），所述第一半导体区域形成所述集电极和发射极区域（1,3）中的一个（3）并且在所述半导体主体（12）形成一叠层，其包括形成有开口（7）的第一绝缘层（4），多晶半导体层（5）和第二绝缘层（6），之后通过非选择性外延生长沉积另外的半导体层（22），其中开口（7）的底部上的单晶水平部分形成基部区域（2），并且在该开口的侧面上具有多晶垂直部分（2A）（7）连接到多晶半导体层（5），之后是间隔（S）形成为平行于开口（7）的侧面，并且在形成发射极和集电极区域（1,3）的另一个（1）的所述间隔物（S）之间形成第二半导体区域（31））。根据本发明，上述方法的特征在于，在沉积另外的半导体层（22）之前，第二绝缘层（6）设置有端部（6A），该端部在突出部分中突出伸出端部（5A）底层半导体层（5）。以这种方式，可以以成本有效的方式获得具有良好高频特性的双极晶体管器件。

3. 发明申请

WO2006109208A2 METHOD OF FABRICATING A HETEROJUNCTION BIPOLAR TRANSISTOR 审中-公开
标题翻译：制备异相双极晶体管的方法
公开(公告)号：WO2006109208A2
公开(公告)日：2006-10-19
申请号：PCT/IB2006/051005
申请日：2006-04-03
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , MEUNIER-BEILLARD, Philippe , DONKERS, Johannes, J., T., M. , HIJZEN, Erwin , MELAI, Joost
发明人： MEUNIER-BEILLARD, Philippe , DONKERS, Johannes, J., T., M. , HIJZEN, Erwin , MELAI, Joost
CPC分类号： H01L29/66242 , H01L29/16 , H01L29/7378
摘要： The invention provides a method for fabricating a heterojunction bipolar transistor with a base connecting region (23), which is formed self-aligned to a base region (7) without applying photolithographic techniques. Further, a collector connecting region (31) and an emitter region (29) are formed simultaneously and self-aligned to the base connecting region (23) without applying photolithographic techniques.
摘要翻译：本发明提供了一种用于制造具有基极连接区域（23）的异质结双极晶体管的方法，该基极连接区域（23）在不施加光刻技术的情况下与基极区域（7）自对准地形成。此外，在不使用光刻技术的情况下，集电极连接区域（31）和发射极区域（29）同时形成并且与基底连接区域（23）自对准。

4. 发明申请

WO2007144828A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2007144828A1
公开(公告)日：2007-12-21
申请号：PCT/IB2007/052220
申请日：2007-06-12
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , HIJZEN, Erwin , MELAI, Joost , VAN NOORT, Wibo, D. , DONKERS, Johannes, J., T., M. , MEUNIER-BEILLARD, Philippe , PIONTEK, Andreas, M. , CHOI, Li Jen , VAN HUYLENBROECK, Stefaan
发明人： HIJZEN, Erwin , MELAI, Joost , VAN NOORT, Wibo, D. , DONKERS, Johannes, J., T., M. , MEUNIER-BEILLARD, Philippe , PIONTEK, Andreas, M. , CHOI, Li Jen , VAN HUYLENBROECK, Stefaan
IPC分类号： H01L27/06 , H01L21/8249
CPC分类号： H01L27/0623 , H01L21/8249 , H01L29/456 , H01L29/66242 , H01L29/7378
摘要： The invention relates to a semiconductor device (10) with a substrate (11) and a semiconductor body (1) comprising a bipolar transistor with in that order a collector region (2), a base region (3), and an emitter region (4), wherein the semiconductor body comprises a projecting mesa (5) comprising at least a portion of the collector region (2) and the base region (3), which mesa is surrounded by an isolation region (6). According to the invention, the semiconductor device (10) also comprises a field effect transistor with a source region, a drain region, an interposed channel region, a superimposed gate dielectric (7), and a gate region (8), which gate region (8) forms a highest part of the field effect transistor, and the height of the mesa (5) is greater than the height of the gate region (8). This device can be manufactured inexpensively and easily by a method according to the invention, and the bipolar transistor can have excellent high-frequency characteristics.
摘要翻译：本发明涉及具有基板（11）和半导体本体（1）的半导体器件（10），该半导体器件（1）包括双极晶体管，依次具有集电极区域（2），基极区域（3）和发射极区域 4），其中半导体主体包括包括集电极区域（2）和基极区域（3）的至少一部分的突出台面（5），该台面由隔离区域（6）包围。根据本发明，半导体器件（10）还包括具有源极区域，漏极区域，插入沟道区域，叠加栅极电介质（7）和栅极区域（8）的场效应晶体管，该栅极区域（8）形成场效应晶体管的最高部分，台面（5）的高度大于栅极区域（8）的高度。该装置可以通过根据本发明的方法廉价且容易地制造，并且双极晶体管可以具有优异的高频特性。

5. 发明申请

WO2005013350A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH A BIPOLAR TRANSISTOR AND DEVICE WITH A BIPOLAR TRANSISTOR 审中-公开
标题翻译：用双极晶体管制造半导体器件的方法和具有双极晶体管的器件
公开(公告)号：WO2005013350A1
公开(公告)日：2005-02-10
申请号：PCT/IB2004/051292
申请日：2004-07-26
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , NEUILLY, Francois, I. , DONKERS, Johannes, J., T., M. , AKSEN, Eyup , MELAI, Joost , FURUKAWA, Yukiko
发明人： NEUILLY, Francois, I. , DONKERS, Johannes, J., T., M. , AKSEN, Eyup , MELAI, Joost , FURUKAWA, Yukiko
IPC分类号： H01L21/331
CPC分类号： H01L29/66287 , H01L29/41708 , H01L29/66242
摘要： The invention relates to the manufacturing of a bipolar transistor device (10) in which the emitter is formed using a polycrystalline silicon region (14) which is prevent in a window in an insulating layer (13) and which extends laterally over said insulating layer (13). The silicon region (14) as well as another silicon region (12) bordering the stack of insulating region (13) and silicon region (14) are silicided by means of a metal layer (16) deposited over the structure. The sideface of the stack is provided with means to avoid bridging of the silicides (17) to be formed. According to the invention the means to prevent bridging of the silicides to be formed comprises that the side face of the stack is structured in such a way that the distance between the upper surface of the silicon region (14) and the upper surface the other silicon region (12) along the surface of the side face of the stack is made longer than the total thickness of the insulating layer (13) and the semiconductor layer (14). Through the increased path by either a positive or negative slope of the side face of the stack, the bridging of silicides is avoided. Preferred embodiments relate to how the side face of the stack is structured.
摘要翻译：本发明涉及双极晶体管器件（10）的制造，其中使用在绝缘层（13）的窗口中防止并且在所述绝缘层上横向延伸的多晶硅区域（14）形成发射极 13）。通过沉积在结构上的金属层（16）将硅区域（14）以及与绝缘区域（13）和硅区域（14）接合的另一个硅区域（12）被硅化。堆叠的侧面设置有避免要形成的硅化物（17）的桥接的装置。根据本发明，防止要形成的硅化物的桥接的手段包括：堆叠的侧面以如下方式构成：硅区域（14）的上表面与上表面之间的距离与另一硅使得沿着堆叠侧面的表面的区域（12）比绝缘层（13）和半导体层（14）的总厚度长。通过堆叠侧面的正或负斜率的增加的路径，避免了硅化物的桥接。优选实施例涉及如何构造堆叠的侧面。

6. 发明申请

WO2006114746A2 BIPOLAR TRANSISTOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：双极晶体管及其制造方法
公开(公告)号：WO2006114746A2
公开(公告)日：2006-11-02
申请号：PCT/IB2006/051248
申请日：2006-04-21
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , MELAI, Joost , MADAKASIRA, Vijayaraghavan
发明人： MELAI, Joost , MADAKASIRA, Vijayaraghavan
CPC分类号： H01L29/7378 , H01L27/0623 , H01L29/0821 , H01L29/66242
摘要： The invention provides a bipolar transistor with an improved performance because of a reduced collector series resistance and a reduced collector to substrate capacitance. The bipolar transistor includes a protrusion (5) which size may be reduced to a dimension that cannot be achieved with lithographic techniques. The protrusion (5) comprises a collector region (21) and a base region (22), in which the collector region (21) covers and electrically connects to a first portion of a first collector connecting region (3). A second collector connecting region (13) covers a second portion of the first collector connecting region (3) and is separated from the protrusion (5) by an insulation layer (10, 11), which covers the sidewalls of the protrusion (5). A contact to the base region (22) is provided by a base connecting region (15), which adjoins the protrusion (5) and which is separated from the second collector connecting region (13) by an insulation layer (14). A collector contact (31) and a base contact (32) are formed simultaneously on an exposed portion of the second collector connecting region (13) and on a portion of the base connecting region (15) that has not been removed.
摘要翻译：本发明提供一种具有改进性能的双极晶体管，因为集电极串联电阻降低，集电极与基板电容降低。双极晶体管包括突起（5），其尺寸可以减小到用光刻技术无法实现的尺寸。突起（5）包括收集器区域（21）和基极区域（22），集电区域（21）覆盖并电连接到第一集电器连接区域（3）的第一部分。第二集电器连接区域（13）覆盖第一集电器连接区域（3）的第二部分，并且通过覆盖突起（5）的侧壁的绝缘层（10,11）与突起（5）分离，。与基部区域（22）的接触由邻接突起（5）的基部连接区域（15）提供，并且通过绝缘层（14）与第二集电器连接区域（13）分离。同时在第二集电器连接区域（13）的露出部分和未被去除的基座连接区域（15）的一部分上同时形成集电极触点（31）和基部触点（32）。

7. 发明申请

WO2007000683A3 BIPOLAR TRANSISTOR AND METHOD OP MANUFACTURING THE SAME 审中-公开
公开(公告)号：WO2007000683A3
公开(公告)日：2007-01-04
申请号：PCT/IB2006/051975
申请日：2006-06-20
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , HIJZEN, Erwin , MELAI, Joost , NEUILLY, Francois
发明人： HIJZEN, Erwin , MELAI, Joost , NEUILLY, Francois
IPC分类号： H01L29/732 , H01L21/331
摘要： The invention relates to a semiconductor device with a substrate (11) and a semiconductor body (11) comprising a bipolar transistor with an emitter region (1), a base region (2) and a collector region (3) comprising a first, a second and a third connection conductor, which emitter region (1) comprises a mesa-shaped emitter connection region (IA) provided with spacers (4) and adjacent thereto a base connection region (2A) comprising a conductive region (2AA) of poly crystalline silicon. In a device (10) according to the invention, the base connection region (2A) comprises a further conducting region (2AB), which is positioned between the conductive region (2AA) of poly crystalline silicon and the base region (2) and which is made of a material with respect to which the conducting region (2AA) of polycrystalline silicon is selectively etchable. Such a device (10) is easy to manufacture by means of a method according to the invention and its bipolar transistor possesses excellent RF properties.

8. 发明申请

WO2003015177A1 BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：双极晶体管及其制造方法
公开(公告)号：WO2003015177A1
公开(公告)日：2003-02-20
申请号：PCT/IB2002/002680
申请日：2002-06-27
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： HUIZING, Hendrik, G., A. , SLOTBOOM, Jan, W. , LYUBOSHENKO, Igor , KLOOTWIJK, Johan, H. , VAN RIJS, Freerk , MELAI, Joost
IPC分类号： H01L29/737
CPC分类号： H01L29/7378 , H01L29/0821 , H01L29/7371
摘要： The bipolar transistor comprises a collector region (1) of a semiconductor material with a first doping type, an emitter region (2) with a first doping type, and a base region (3) of a semiconductor material with a second doping type, opposite to the first doping type, which base region is arranged between the emitter region (2) and the collector region (1), and a semiconductor area (4) extending between the collector region (1) and the base region (3). The collector region (1) is doped such that the semiconductor area (4) is fully depleted and the magnitude of the intrinsic electric field in the semiconductor area (4) is at least substantially independent of the applied doping types and the doping concentration in the semiconductor area (4). The method of manufacturing the bipolar transistor comprises the step of epitaxially growing a semiconductor layer (6) over a collector region (1) and doping the epitaxial layer (6) in situ, after which the base region (3) is deposited epitaxially. The comparatively thin semiconductor area (4) between the base region (3) and the collector region (1) allows ultrafast bipolar transistors with a high cutoff frequency and an improved breakdown voltage to be manufactured. The product of the cutoff frequency and the collector-emitter breakdown voltage of these bipolar transistors exceeds the Johnson limit.
摘要翻译：双极晶体管包括具有第一掺杂类型的半导体材料的集电极区域（1），具有第一掺杂类型的发射极区域（2）和具有第二掺杂类型的半导体材料的基极区域（3）到第一掺杂类型，该基极区域布置在发射极区域（2）和集电极区域（1）之间，以及在集电极区域（1）和基极区域（3）之间延伸的半导体区域（4）。掺杂集电极区域（1）使得半导体区域（4）完全耗尽并且半导体区域（4）中的本征电场的大小至少基本上与施加的掺杂类型和掺杂浓度半导体区域（4）。制造双极晶体管的方法包括在集电极区域（1）上外延生长半导体层（6）并原位掺杂外延层（6）的步骤，然后外延地沉积基极区域（3）。在基极区域（3）和集电极区域（1）之间的较薄的半导体区域（4）允许制造具有高截止频率和改善的击穿电压的超快双极型晶体管。这些双极晶体管的截止频率和集电极 - 发射极击穿电压的乘积超过约翰逊限制。

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