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1. 发明申请

WO2007036897A2 IMPROVEMENTS IN OR RELATING TO THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS 审中-公开
标题翻译：或与薄膜大声波（BAW）谐振器相关的改进
公开(公告)号：WO2007036897A2
公开(公告)日：2007-04-05
申请号：PCT/IB2006053534
申请日：2006-09-28
申请人： KONINKL PHILIPS ELECTRONICS NV , MILSON ROBERT F , VANHELMONT FREDERIK W M , JANSMANN ANDREAS B M , RUIGROK JAAP , LOEBL HANS-PETER
发明人： MILSON ROBERT F , VANHELMONT FREDERIK W M , JANSMANN ANDREAS B M , RUIGROK JAAP , LOEBL HANS-PETER
IPC分类号： H03H9/17
CPC分类号： H03H9/02118 , H03H9/0211 , H03H9/174 , H03H9/175
摘要： A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1 ) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15 %, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16). Planarisation of the dielectric material (18) enhances the performance of the device.
摘要翻译：一种薄膜体声波（BAW）谐振器，例如SBAR或FBAR，用于在1 GHz频率工作的RF选择性滤波器。 BAW谐振器包括在相对侧上具有第一和第二表面的压电层（14），在第一表面上延伸的第一电极（16）和在第二表面上延伸的第二电极（12）确定谐振器的基本厚度延伸（TE）模式的激励区域的第一和第二电极的重叠（R1）。通过在与第一电极（16）相同的层中提供介电材料（18）并围绕该电极来减小谐振器的插入损耗。构成电介质材料（18）的材料与其包围的第一电极（16）的材料具有不同的质量，通常在5％至15％之间。电介质材料（18）的质量可以低于或高于第一电极（16）的质量。介电材料（18）的平面化增强了器件的性能。

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