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1. 发明申请

WO2017099702A1 THERMAL BUDGET ENHANCEMENT OF A MAGNETIC TUNNEL JUNCTION 审中-公开
标题翻译：磁性隧道结热预算增强
公开(公告)号：WO2017099702A1
公开(公告)日：2017-06-15
申请号：PCT/US2015/064182
申请日：2015-12-07
申请人： INTEL CORPORATION , RAHMAN, Tofizur , WIEGAND, Christopher J. , BERGSTROM, Daniel B.
发明人： RAHMAN, Tofizur , WIEGAND, Christopher J. , BERGSTROM, Daniel B.
IPC分类号： H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： Embodiments of the disclosure are directed to a magnetic tunneling junction (MTJ) that includes a diffusion barrier. The diffusion barrier can be disposed between two ferromagnetic layers of the MTJ. More specifically, the diffusion barrier can be disposed between a first ferromagnetic layer, which is adjacent to a natural antiferromagnetic layer, and a second ferromagnetic layer; the first and second ferromagnetic layers and the diffusion barrier being part of a synthetic antiferromagnet. The diffusion barrier can be made of a refractory metal, such as tantalum. The diffusion barrier acts as a barrier for manganese diffusion from the natural antiferromagnetic layer into the synthetic antiferromagnet and other higher layers of the MTJ.
摘要翻译：本公开的实施例针对包括扩散阻挡层的磁性隧道结（MTJ）。扩散阻挡层可以设置在MTJ的两个铁磁层之间。更具体地说，扩散阻挡层可以设置在与天然反铁磁层相邻的第一铁磁层和第二铁磁层之间; 第一和第二铁磁层以及扩散阻挡层是合成反铁磁体的一部分。扩散阻挡层可以由难熔金属例如钽制成。扩散阻挡层起到阻止锰从天然反铁磁层扩散到合成反铁磁体和MTJ的其他更高层的作用。

2. 发明申请

WO2018004698A1 DEVICE, SYSTEM AND METHOD FOR IMPROVED MAGNETIC ANISOTROPY OF A MAGNETIC TUNNEL JUNCTION 审中-公开
标题翻译：改善磁隧道结的磁各向异性的装置，系统和方法
公开(公告)号：WO2018004698A1
公开(公告)日：2018-01-04
申请号：PCT/US2016/040875
申请日：2016-07-01
申请人： INTEL CORPORATION , RAHMAN, MD Tofizur , WIEGAND, Christopher J. , MAERTZ, Brian , OUELLETTE, Daniel G. , O'BRIEN, Kevin P. , OGUZ, Kaan , DOYLE, Brian S. , DOCZY, Mark L. , BERGSTROM, Daniel B. , BROCKMAN, Justin S. , GOLONZKA, Oleg , GHANI, Tahir
发明人： RAHMAN, MD Tofizur , WIEGAND, Christopher J. , MAERTZ, Brian , OUELLETTE, Daniel G. , O'BRIEN, Kevin P. , OGUZ, Kaan , DOYLE, Brian S. , DOCZY, Mark L. , BERGSTROM, Daniel B. , BROCKMAN, Justin S. , GOLONZKA, Oleg , GHANI, Tahir
IPC分类号： H01L43/02 , H01L43/10 , G11C11/16
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.
摘要翻译：材料层堆叠结构提供具有改善的垂直磁各向异性（PMA）特性的磁性隧道结（MTJ）。在一个实施例中，材料层堆叠的自由磁层设置在隧道势垒层和氧化镁（Mg）的盖层之间。自由磁层包括基本上由钴原子，铁原子和硼原子的组合构成的钴 - 铁 - 硼（CoFeB）体。在与自由磁性层与隧道势垒层的界面邻接的第一区域中，CoFeB主体的第一硼质量分数等于或大于25％（例如，等于或大于27％）。在另一个实施例中，第一硼质量分数大于CoFeB主体的第二区域中的第二硼质量分数，所述第二区域邻接自由磁层与帽层的界面。

3. 发明申请

WO2015094309A1 METHOD OF FORMING A WRAP-AROUND CONTACT ON A SEMICONDCUTOR DEVICE 审中-公开
标题翻译：在半导体器件上形成缠绕接触的方法
公开(公告)号：WO2015094309A1
公开(公告)日：2015-06-25
申请号：PCT/US2013/076694
申请日：2013-12-19
申请人： INTEL CORPORATION , LEIB, Jeffrey S. , TROEGER, Ralph T. , BERGSTROM, Daniel B.
发明人： LEIB, Jeffrey S. , TROEGER, Ralph T. , BERGSTROM, Daniel B.
IPC分类号： H01L21/28
CPC分类号： H01L21/76895 , H01L21/2855 , H01L21/28568 , H01L21/76865 , H01L21/76883 , H01L23/528 , H01L23/53266 , H01L23/535 , H01L29/41791 , H01L29/66795 , H01L29/785 , H01L2029/7858
摘要： Techniques and methods related to forming a wrap-around contact on a semiconductor device, and apparatus, system, and mobile platform incorporating such semiconductor devices.
摘要翻译：涉及在半导体器件上形成环绕接触的技术和方法，以及包括这种半导体器件的装置，系统和移动平台。

4. 发明申请

WO2017052491A1 ASPECT RATIO MODIFICATION VIA ANGLED IMPLANTATION 审中-公开
标题翻译：通过植入植被进行比较改良
公开(公告)号：WO2017052491A1
公开(公告)日：2017-03-30
申请号：PCT/US2015/051138
申请日：2015-09-21
申请人： INTEL CORPORATION
发明人： WIEGAND, Christopher J. , BERGSTROM, Daniel B.
IPC分类号： H01L43/12 , H01L43/02 , H01L43/08
CPC分类号： H01L43/12 , H01L43/08
摘要： This disclosure is directed to aspect ratio modification via angled implantation. For a structure fabricated on a substrate during integrated circuit (IC) manufacture, achieving a certain target aspect ratio (AR) may be important for proper operation of the IC. The target AR may be based on internal dimensions of the structure (e.g., a magnetic tunnel junction). Fabricating the structure to have the target AR employing typical semiconductor fabrication operations may be difficult, expensive, etc. However, the requirements to achieve the target AR may be relaxed, and angled implantation may be used to modify the internal dimensions resulting from fabrication (e.g., a fabrication AR) to the target AR. For example, ions of amorphizing material may be accelerated at an angle into portions of the structure to deactivate at least some material in the structure, which may modify the fabrication AR to the target AR.
摘要翻译：本公开涉及通过倾斜植入进行的纵横比修改。对于在集成电路（IC）制造期间在衬底上制造的结构，实现某一目标宽高比（AR）对于IC的正确操作可能是重要的。目标AR可以基于结构的内部尺寸（例如，磁性隧道结）。使用典型的半导体制造操作来制造具有目标AR的结构可能是困难的，昂贵的等等。然而，实现目标AR的要求可以被放宽，并且角度注入可以用于修改由制造导致的内部尺寸（例如，，制造AR）到目标AR。例如，非晶化材料的离子可以以一定角度加速到结构的部分以使结构中的至少一些材料停用，这可以将制造AR修改为目标AR。

5. 发明申请

WO2018125243A1 PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ) DEVICES HAVING A METAL OXIDE LAYER 审中-公开
公开(公告)号：WO2018125243A1
公开(公告)日：2018-07-05
申请号：PCT/US2016/069625
申请日：2016-12-30
申请人： INTEL CORPORATION
发明人： RAHMAN, MD Tofizur , WIEGAND, Christopher J. , MAERTZ, Brian , OUELLETTE, Daniel G. , OGUZ, Kaan , O'BRIEN, Kevin P. , DOYLE, Brian S. , DOCZY, Mark L. , BERGSTROM, Daniel B. , GHANI, Tahir , GOLONZKA, Oleg , BROCKMAN, Justin S.
IPC分类号： H01L43/08 , H01L43/02 , H01L43/10 , H01L43/12
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12
摘要： In various embodiments, the systems, methods, and apparatus disclosed herein are directed to reducing the effects of damping, for example, Gilbert damping, in perpendicular magnetic tunnel junction (pMTJ) devices, while maintaining the tunnel magnetoresistance (TMR) and/or the resistance area (RA) product of the pMTJ devices. In one embodiment, the Gilbert damping can be directly proportional to the switching current in pMTJ devices. Accordingly, because the systems, methods, and apparatus can reduce the Gilbert damping, the switching current can also be reduced the pMTJ devices. In one embodiment, a pMTJ device is disclosed, the device comprising a free layer that includes a multilayer including a first ferromagnetic layer, a non-magnetic oxide layer (for example, a metal oxide layer), and a second ferromagnetic layer can have a reduced spin pumping.

6. 发明申请

WO2017171767A1 DIFFUSION BARRIERS 审中-公开
标题翻译：扩散障碍
公开(公告)号：WO2017171767A1
公开(公告)日：2017-10-05
申请号：PCT/US2016/025139
申请日：2016-03-31
申请人： INTEL CORPORATION
发明人： ZIERATH, Daniel J. , FARMER, Jason A. , BERGSTROM, Daniel B.
IPC分类号： H01L21/205 , H01L21/3205
摘要： In an example, there is disclosed a chemical compound, including a transition metal, a post-transition metal, a metalloid, and a nonmetal. By way of non-limiting example, the post-transition metal may be aluminum. The transition metal is selected from the group consisting of tungsten, tantalum, hafnium, molybdenum, niobium, zirconium, vanadium, and titanium. The metalloid may be boron or silicon. The nonmetal may be carbon or nitrogen. The compound may be used, for example, as a barrier material in an integrated circuit.
摘要翻译：在一个实例中，公开了一种化合物，包括过渡金属，后过渡金属，准金属和非金属。作为非限制性实例，后过渡金属可以是铝。过渡金属选自钨，钽，铪，钼，铌，锆，钒和钛。准金属可以是硼或硅。非金属可以是碳或氮。该化合物可以用作例如集成电路中的阻挡材料。

7. 发明申请

WO2018063406A1 MICROELECTRONIC DEVICES AND METHODS FOR ENHANCING INTERCONNECT RELIABILITY PERFORMANCE USING TUNGSTEN CONTAINING ADHESION LAYERS TO ENABLE COBALT INTERCONNECTS 审中-公开
标题翻译：使用含钨粘合层来提高互连可靠性性能的微电子器件和方法使钴互连
公开(公告)号：WO2018063406A1
公开(公告)日：2018-04-05
申请号：PCT/US2016/055032
申请日：2016-09-30
申请人： INTEL CORPORATION
发明人： FARMER, Jason A. , LEIB, Jeffrey S. , MCSWINEY, Michael L. , SIMKA, Harsono S. , BERGSTROM, Daniel B.
IPC分类号： H01L21/768
摘要： Embodiments of the invention include a microelectronic device that includes a substrate having a layer of dielectric material that includes a feature with a depression, a Tungsten containing barrier liner layer formed in the depression of the feature, and a Cobalt conductive layer deposited on the Tungsten containing barrier liner layer in the depression of the feature. The Tungsten containing barrier liner layer provides adhesion for the Cobalt conductive layer.
摘要翻译：本发明的实施例包括一种微电子器件，该微电子器件包括具有介电材料层的衬底，所述介电材料层包括具有凹陷的特征，形成在所述特征的凹陷中的含钨阻挡衬垫层和沉积在包含钨的阻挡衬垫层上的钴导电层在特征的凹陷中。含钨阻隔衬垫层为钴导电层提供粘合力。

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