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1. 发明申请

WO2005119280A2 BI-DIRECTIONAL CURRENT SENSING BY MONITORING VS VOLTAGE IN A HALF OR FULL BRIDGE CIRCUIT 审中-公开
标题翻译：通过监视半桥或全桥电路中的电压进行双向电流感测
公开(公告)号：WO2005119280A2
公开(公告)日：2005-12-15
申请号：PCT/US2005019516
申请日：2005-06-02
申请人： INT RECTIFIER CORP , CHENG XIAO-CHANG , HONDA JUN , WILHELM DANA
发明人： CHENG XIAO-CHANG , HONDA JUN , WILHELM DANA
IPC分类号： G01R17/10 , G01R19/00 , G01R31/28 , G01R31/40
CPC分类号： G01R17/10 , G01R19/0092 , G01R31/40 , H02M2001/0009
摘要： An apparatus and method for determining the output current in a bridge-connected switched transistor output circuit including high-side and low-side transistor switches, typically MOSFETS. The voltage at a common node between the high and low side switches is sensed, and offset in a first circuit by a fixed amount so that the voltage is positive for all positive or negative output currents of interest. The output current is actually determined in a second circuit which receives the offset voltage signal only predetermined times in relation to the on-time of the low side switch. The first circuit includes a current reference source/level shifter and a current mirror circuit formed of a plurality of transistors in a particular circuit configuration. The second circuit is coupled to an output of the first circuit by a gated NMOS transistor at the desired times to provide the current measurement signal. The second circuit includes a second current reference source having substantially the same electrical characteristics as the first current reference source, and a second plurality of transistors respectively matched to the input side circuit transistors, and connected in the same circuit configuration. In the second circuit, the offset signal is compared with high and low reference signals to provide an indication if the output current exceeds an overcurrent limit, either positively or negatively. The sensing circuit is advantageously integrated with the output circuit gate driver in a single IC.
摘要翻译：一种用于确定桥接开关晶体管输出电路中的输出电流的装置和方法，该电路包括高侧和低侧晶体管开关，典型地是MOSFET。感测高侧和低侧开关之间的公共节点处的电压，并且在第一电路中偏移固定的量，使得所有感兴趣的正或负输出电流的电压为正。输出电流实际上是在相对于低侧开关的接通时间仅接收到预定时间的偏移电压信号的第二电路中确定的。第一电路包括电流参考源/电平移位器和由特定电路配置中的多个晶体管形成的电流镜电路。第二电路在期望的时间通过门控NMOS晶体管耦合到第一电路的输出，以提供电流测量信号。第二电路包括具有与第一电流参考源基本相同的电特性的第二电流参考源和分别与输入侧电路晶体管匹配并以相同电路配置连接的第二多个晶体管。在第二电路中，将偏移信号与高和低参考信号进行比较，以提供输出电流是否超过过电流极限的指示，无论是正极还是负极。感测电路有利地与单个IC中的输出电路栅极驱动器集成。

2. 发明申请

WO2005050703A3 BOOTSTRAP DIODE EMULATOR WITH DYNAMIC BACK-GATE BIASING 审中-公开
标题翻译：具有动态后门偏置的双极型二极管仿真器
公开(公告)号：WO2005050703A3
公开(公告)日：2006-01-12
申请号：PCT/US2004037602
申请日：2004-11-10
申请人： INT RECTIFIER CORP , WILHELM DANA
发明人： WILHELM DANA
IPC分类号： G06F9/455 , H01L20060101 , H03K17/06 , H03K17/687 , G06F19/00 , G05F1/40
CPC分类号： H03K17/6871 , H03F2200/31 , H03K17/063 , H03K2217/0018
摘要： A bootstrap diode emulator circuit (302) for use in a half-bridge switching circuit (300) employing transistors (105a, 105b) connected to one another in a totem pole configuration, a driver circuit for driving the transistors, and a bootstrap diode emulator circuit (302) includes an LDMOS transistor having a gate, a back-gate, a source and a drain, the drain of the LDMOS transistor being coupled to the low-side supply node; a gate control circuit electrically coupled to the gate of the LDMOS transistor, and a dynamic back-gate biasing circuit electrically coupled to the back-gate of the LDMOS transistor. The dynamic back-gate biasing circuit is operable to dynamically bias the back-gate of the LDMOS of the LDMOS transistor when the LDMOS is turned on by applying a voltage to the back-gate of the LDMOS transistor that is close to but slightly lower than a voltage of the drain of the LDMOS transistor.
摘要翻译：一种用于使用在图腾柱结构中彼此连接的晶体管（105a，105b）的半桥开关电路（300）中的自举二极管仿真器电路（302），用于驱动晶体管的驱动电路和自举二极管仿真器电路（302）包括具有栅极，背栅极，源极和漏极的LDMOS晶体管，LDMOS晶体管的漏极耦合到低侧供电节点; 电耦合到LDMOS晶体管的栅极的栅极控制电路和电耦合到LDMOS晶体管的背栅极的动态背栅极偏置电路。动态背栅极偏置电路可操作以通过向LDMOS晶体管的背栅极施加电压而使LDMOS晶体管导通时动态地偏置LDMOS晶体管的LDMOS的背栅极，LDMOS晶体管的栅极接近但略低于 LDMOS晶体管的漏极电压。

3. 发明申请

WO2004086463A3 HIGH VOLTAGE OFFSET DETECTION CIRCUIT AND METHOD 审中-公开
标题翻译：高电压偏移检测电路及方法
公开(公告)号：WO2004086463A3
公开(公告)日：2005-05-26
申请号：PCT/US2004008904
申请日：2004-03-24
申请人： INT RECTIFIER CORP , WILHELM DANA
发明人： WILHELM DANA
IPC分类号： H02M3/337 , H02M7/538 , H03K17/00 , H03K17/06 , H03K17/082 , H05B41/285 , G05F1/00
CPC分类号： H02M7/538 , H02M2001/0048 , H03K17/063 , H03K17/0822 , H03K2217/0036 , H05B41/2856 , Y02B20/186 , Y02B70/1491
摘要： A high voltage offset detection circuit registers the voltage at the midpoint of a switching half-bridge to determine when the midpoint voltage reaches a given value to avoid hard-switching in the half-bridge switches. The midpoint voltage of the switching half-bridge is applied through a buffer to a MOSFET that is current limited to produce a voltage that reflects the voltage of the midpoint of the switching half-bridge. The voltage produced by the MOSFET may be supplied to a comparator with a threshold input to obtain a signal that indicates when the switches of the switching half-bridge may be turned on to avoid hard-switching. The MOSFET may be selectively enabled to detect the voltage. The buffer operates to prevent voltages being applied to the MOSFET lower than a low side return voltage to prevent shorts in the IC between the low side supply voltage and low side return. The offset detection circuit may be completely implemented on a monolithic integrated circuit with a switching half-bridge driver, or may be a separate circuit coupled to the half-bridge and external to the half-bridge driver.
摘要翻译：高电压失调检测电路在开关半桥的中点登记电压，以确定中点电压何时达到给定值，以避免半桥开关中的硬开关。开关半桥的中点电压通过缓冲器施加到电流限制的MOSFET，以产生反映开关半桥中点电压的电压。由MOSFET产生的电压可以提供给具有阈值输入的比较器，以获得指示开关半桥的开关何时导通以避免硬切换的信号。可以选择性地使能MOSFET来检测电压。缓冲器用于防止施加到MOSFET的电压低于低侧返回电压，以防止IC在低侧电源电压和低侧返回之间的短路。偏移检测电路可以在具有开关半桥驱动器的单片集成电路上完全实现，或者可以是耦合到半桥并且半桥驱动器外部的单独电路。

4. 发明申请

WO2005079513B1 HALF BRIDGE ADAPTIVE DEAD TIME CIRCUIT AND METHOD 审中-公开
标题翻译：半桥自适应死区时间电路和方法
公开(公告)号：WO2005079513B1
公开(公告)日：2007-06-21
申请号：PCT/US2005005349
申请日：2005-02-22
申请人： INT RECTIFIER CORP , RUSU IULIA , WILHELM DANA , GREEN PETER
发明人： RUSU IULIA , WILHELM DANA , GREEN PETER
IPC分类号： G05F1/00 , G05F1/40 , H02M1/38 , H03K17/296
CPC分类号： H02M1/38 , H03K17/166 , H03K17/284 , H03K17/6871 , H03K2217/0063 , H03K2217/0072 , H03K2217/0081
摘要： A high voltage offset detection circuit registers the voltage at the midpoint of a switching half-bridge and may determine when the midpoint voltage reaches a given value to avoid hard-switching in the half-bridge switches. The midpoint voltage of the switching half-bridge is applied through a buffer to a MOSFET that is current limited to produce a voltage that reflects the voltage of the midpoint of the switching half-bridge. The voltage produced by the MOSFET may be supplied to a comparator with a threshold input to obtain a signal that indicates when the switches of the switching half-bridge may be turned on to avoid hard-switching. An adaptive dead-time circuit and method may comprise the above sensing circuit, a first circuit for generating a first signal indicative of a high to low transition of the midpoint voltage; and an output circuit for generating an adaptive dead-time output signal based thereon. A second circuit may generate a second signal indicative of a low to high transition of the voltage; wherein the output circuit generates the adaptive dead-time output signal based on both the first and second signals. The second circuit preferably generates the second signal by reproducing the first signal. The first circuit may generate the first signal by charging a capacitor in response to pulses, and the second circuit may generate the second signal by charging a second capacitor corresponding to said first capacitor, and the adaptive dead-time output signal may be responsive to the charges on the first and second capacitors.
摘要翻译：高电压偏移检测电路将电压记录在开关半桥的中点处，并且可以确定中点电压何时达到给定值以避免半桥开关中的硬切换。通过缓冲器将开关半桥的中点电压施加到MOSFET，该MOSFET被限制电流以产生反映开关半桥中点电压的电压。由MOSFET产生的电压可以被提供给具有阈值输入的比较器以获得指示开关半桥的开关何时可以导通以避免硬开关的信号。自适应死区电路和方法可以包括上述感测电路，用于产生指示中点电压的高到低转变的第一信号的第一电路; 以及用于基于此产生自适应停滞时间输出信号的输出电路。第二电路可以产生指示电压从低到高转换的第二信号; 其中所述输出电路基于所述第一信号和所述第二信号二者来生成所述自适应死区输出信号。第二电路最好通过再现第一信号来产生第二信号。第一电路可响应于脉冲通过对电容器充电来产生第一信号，并且第二电路可通过对与所述第一电容器对应的第二电容器充电来产生第二信号，并且自适应停滞时间输出信号可响应第一和第二电容器上的电荷。

5. 发明申请

WO2004028206A3 ADAPTIVE CFL CONTROL CIRCUIT 审中-公开
标题翻译：自适应CFL控制电路
公开(公告)号：WO2004028206A3
公开(公告)日：2004-06-17
申请号：PCT/US0329203
申请日：2003-09-19
申请人： INT RECTIFIER CORP , RIBARICH THOMAS , WILHELM DANA
发明人： RIBARICH THOMAS , WILHELM DANA
IPC分类号： H05B41/282 , H05B41/298 , G05F1/00
CPC分类号： H05B41/2828 , H05B41/2981
摘要： An electronic ballast provides fault detection and safety features for overcurrent protection and hard switching at a half bridge. A voltage controlled oscillator supplies a switching frequency that is modifiable based on operational feedback parameters. A feedback circuit senses load current and output voltage to determiner fault conditions and to provide control information for adaptively adjusting the frequency of the voltage controlled oscillator. By appropriately controlling the voltage controlled oscillator output, the electronic ballast maintains a zero volt switching with minimum current switching to achieve an efficient and robust electronic ballast control. The entire control is integrated on a single integrated circuit.
摘要翻译：电子镇流器为半桥过流保护和硬开关提供故障检测和安全功能。压控振荡器提供基于操作反馈参数可修改的开关频率。反馈电路感测负载电流和输出电压到确定器故障条件，并提供用于自适应调节压控振荡器频率的控制信息。通过适当地控制压控振荡器输出，电子镇流器通过最小电流切换保持零伏开关，以实现有效和鲁棒的电子镇流器控制。整个控制集成在单个集成电路上。

6. 发明申请

WO2005079513A3 HALF BRIDGE ADAPTIVE DEAD TIME CIRCUIT AND METHOD 审中-公开
标题翻译：半桥自适应死区时间电路和方法
公开(公告)号：WO2005079513A3
公开(公告)日：2007-04-19
申请号：PCT/US2005005349
申请日：2005-02-22
申请人： INT RECTIFIER CORP , RUSU IULIA , WILHELM DANA , GREEN PETER
发明人： RUSU IULIA , WILHELM DANA , GREEN PETER
IPC分类号： G05F1/00 , G05F1/40 , H02M1/38 , H03K17/296
CPC分类号： H02M1/38 , H03K17/166 , H03K17/284 , H03K17/6871 , H03K2217/0063 , H03K2217/0072 , H03K2217/0081
摘要： A high voltage offset detection circuit registers the voltage at the midpoint of a switching half-bridge and may determine when the midpoint voltage reaches a given value to avoid hard-switching in the half-bridge switches. The midpoint voltage of the switching half-bridge is applied through a buffer to a MOSFET that is current limited to produce a voltage that reflects the voltage of the midpoint of the switching half-bridge. The voltage produced by the MOSFET may be supplied to a comparator with a threshold input to obtain a signal that indicates when the switches of the switching half-bridge may be turned on to avoid hard-switching. An adaptive dead-time circuit and method may comprise the above sensing circuit, a first circuit for generating a first signal indicative of a high to low transition of the midpoint voltage; and an output circuit for generating an adaptive dead-time output signal based thereon. A second circuit may generate a second signal indicative of a low to high transition of the voltage; wherein the output circuit generates the adaptive dead-time output signal based on both the first and second signals. The second circuit preferably generates the second signal by reproducing the first signal. The first circuit may generate the first signal by charging a capacitor in response to pulses, and the second circuit may generate the second signal by charging a second capacitor corresponding to said first capacitor, and the adaptive dead-time output signal may be responsive to the charges on the first and second capacitors.
摘要翻译：高电压失调检测电路在开关半桥的中点登记电压，并且可以确定中点电压何时达到给定值以避免半桥开关中的硬切换。开关半桥的中点电压通过缓冲器施加到电流限制的MOSFET，以产生反映开关半桥中点电压的电压。由MOSFET产生的电压可以提供给具有阈值输入的比较器，以获得指示开关半桥的开关何时导通以避免硬切换的信号。自适应死区时间电路和方法可以包括上述感测电路，用于产生指示中点电压的高到低转换的第一信号的第一电路; 以及用于基于此产生自适应死区时间输出信号的输出电路。第二电路可以产生指示电压的低到高转换的第二信号; 其中所述输出电路基于所述第一和第二信号两者产生所述自适应死区时间输出信号。第二电路优选地通过再现第一信号来产生第二信号。第一电路可以通过响应于脉冲对电容器充电来产生第一信号，并且第二电路可以通过对与所述第一电容器相对应的第二电容器进行充电来产生第二信号，并且自适应死区时间输出信号可以响应于在第一和第二电容器上充电。

7. 发明申请

WO2004028206B1 ADAPTIVE CFL CONTROL CIRCUIT 审中-公开
标题翻译：自适应CFL控制电路
公开(公告)号：WO2004028206B1
公开(公告)日：2004-08-26
申请号：PCT/US0329203
申请日：2003-09-19
申请人： INT RECTIFIER CORP , RIBARICH THOMAS , WILHELM DANA
发明人： RIBARICH THOMAS , WILHELM DANA
IPC分类号： H05B41/282 , H05B41/298 , G05F1/00
CPC分类号： H05B41/2828 , H05B41/2981
摘要： An electronic ballast provides fault detection and safety features for overcurrent protection and hard switching at a half bridge. A voltage controlled oscillator supplies a switching frequency that is modifiable based on operational feedback parameters. A feedback circuit senses load current and output voltage to determiner fault conditions and to provide control information for adaptively adjusting the frequency of the voltage controlled oscillator. By appropriately controlling the voltage controlled oscillator output, the electronic ballast maintains a zero volt switching with minimum current switching to achieve an efficient and robust electronic ballast control. The entire control is integrated on a single integrated circuit.
摘要翻译：电子镇流器为半桥的过流保护和硬开关提供故障检测和安全功能。压控振荡器提供可根据操作反馈参数修改的开关频率。反馈电路感测负载电流和输出电压以确定故障状况并提供用于自适应地调节压控振荡器的频率的控制信息。通过适当控制压控振荡器的输出，电子镇流器以最小电流切换保持零伏开关，以实现高效稳健的电子镇流器控制。整个控制集成在一个集成电路上。

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