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1. 发明申请

WO2007100372A2 CONFIGURABLE PROJECTION DEVICE 审中-公开
标题翻译：可配置投影设备
公开(公告)号：WO2007100372A2
公开(公告)日：2007-09-07
申请号：PCT/US2006047455
申请日：2006-12-12
申请人： INFOCUS CORP , RHODES DONALD , JOHANSEN MORTEN , GEMELKE MIKE , ALLISON JEFF , ANDERSON TIM
发明人： RHODES DONALD , JOHANSEN MORTEN , GEMELKE MIKE , ALLISON JEFF , ANDERSON TIM
CPC分类号： H04N5/74 , G03B21/26
摘要： A modular projection device. The modular projection device includes a docking interface for selectively coupling the projection device to a content source module that provides the projection device with video content for projection onto a projection surface.
摘要翻译：模块化投影设备。模块化投影设备包括对接接口，用于选择性地将投影设备耦合到内容源模块，该内容源模块为投影设备提供用于投影到投影表面上的视频内容。

2. 发明申请

WO2008085232A2 HERBICIDAL COMPOSITIONS AND METHODS OF CONTROLLING WEED GROWTH 审中-公开
标题翻译：除草剂组合物和控制生长的方法
公开(公告)号：WO2008085232A2
公开(公告)日：2008-07-17
申请号：PCT/US2007024166
申请日：2007-11-16
申请人： COGNIS IP MAN GMBH , ANDERSON TIM , MAO JIANHUA
发明人： ANDERSON TIM , MAO JIANHUA
IPC分类号： A01N57/20 , A01P13/00
CPC分类号： A01N57/20 , A01N37/02 , A01N37/04 , A01N2300/00
摘要： An herbicidal composition which comprises a mixture of an herbicide and a C 2 -C 5 mono- or dicarboxylic acid additive, and mixtures of additives thereof, wherein the composition is more effective in providing a faster-acting herbicidal effect than the herbicide alone is described. A method of controlling weed growth with the herbicidal composition is also described.
摘要翻译：一种除草组合物，其包含除草剂和C 2 -C 5 - 单 - 或二羧酸添加剂的混合物及其添加剂的混合物，其中所述组合物更有效在提供比单独的除草剂更快的除草效果。还描述了用除草组合物控制杂草生长的方法。

3. 发明申请

WO2011130315A3 MEDIA PROCESSING DEVICE WITH ENHANCED MEDIA AND RIBBON LOADING AND UNLOADING FEATURES 审中-公开
标题翻译：具有增强介质和RIBBON加载和卸载功能的媒体处理设备
公开(公告)号：WO2011130315A3
公开(公告)日：2012-07-19
申请号：PCT/US2011032173
申请日：2011-04-12
申请人： ZIH CORP , ANDERSON TIM , GOTSCHEWSKI ROBERT P , URBAN MARK B
发明人： ANDERSON TIM , GOTSCHEWSKI ROBERT P , URBAN MARK B
IPC分类号： B41J29/13
CPC分类号： B41J11/02 , B41J2/14 , B41J2/32 , B41J25/304 , B41J25/308 , B41J25/312 , B41J29/00 , B41J29/13
摘要： A device for processing media may include a front panel, a rear panel, a side panel, a support surface, and an access door assembly. The access door assembly may be pivotally coupled to the support surface and may include a major door pivotally coupled to a minor door. The minor door may be movable from an operational position to a minor support position and the major door may be movable from the operational position to a major support position in which the major door is positioned against and supported by the support surface. The side panel may define an imaginary plane that extends upward beyond the support surface and the access door assembly may be sized to be supported on the support surface without crossing the imaginary plane.
摘要翻译：用于处理介质的装置可以包括前面板，后面板，侧面板，支撑表面和检修门组件。检修门组件可枢转地联接到支撑表面，并且可以包括枢转地联接到小门的主门。小门可以从可操作位置移动到次要支撑位置，并且主门可以从操作位置移动到主支撑位置，在主支撑位置，主门被定位成抵靠支撑表面并由支撑表面支撑。侧板可以限定向上延伸超过支撑表面的假想平面，并且检修门组件的尺寸可被设计成支撑在支撑表面上而不会穿过假想平面。

4. 发明申请

WO2008151067A3 CHEMICAL VAPOR DEPOSITION OF CUINXGA1-X(SEYS1-Y)2 THIN FILMS AND USES THEREOF 审中-公开
标题翻译： CUINXGA1-X（SEYS1-Y）2薄膜的化学气相沉积及其用途
公开(公告)号：WO2008151067A3
公开(公告)日：2009-02-19
申请号：PCT/US2008065400
申请日：2008-05-30
申请人： UNIV FLORIDA , KIM W K , ANDERSON TIM
发明人： KIM W K , ANDERSON TIM
IPC分类号： C23C16/18 , C23C16/06
CPC分类号： C23C16/305 , Y10T428/31678
摘要： The subject application relates to a chemical vapor (CV) deposition technique to form CuInxGa1-x(SeySi-y)2 compounds. As a copper source, solid copper can be used with a HCl transport gas and Cu3Cl3 is expected to be a major Cu-containing vapor species in this system. Liquid indium and HCl transport gas are appropriate for the indium source to provide InCl vapor species. Since selenium and sulphur are relatively highly volatile, their vapor can be carried by an inert gas without an additional transport gas, although H2Se and H2S can be used. Each source temperature can be controlled separately so as to provide a sufficient and stable vapor flux. Also provided by the subject application are CV-deposited substrates and devices, such as electronic devices or solar cells, that contain CV-deposited CuInxGaI- x(SeySi-y)2 substrates.
摘要翻译：本申请涉及形成CuInxGa1-x（SeySi-y）2化合物的化学蒸气（CV）沉积技术。作为铜源，固体铜可以与HCl输送气体一起使用，并且预期Cu 3 Cl 3在该体系中是主要的含Cu蒸气物质。液态铟和HCl输送气体适用于铟源提供InCl蒸气物质。由于硒和硫的挥发性相对较高，所以尽管可以使用H2Se和H2S，但它们的蒸气可以通过惰性气体进行运输，而不需要额外的运输气体。可以分别控制每个源温度，以便提供足够和稳定的蒸气通量。由本申请提供的还有CV沉积的衬底和诸如电子器件或太阳能电池的器件，其包含CV沉积的CuIn x Ga 1-x（SeySi-y）2衬底。

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