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1. 发明申请

WO0247089A2 MAGNETORESISTIVE MEMORY AND METHOD FOR READING OUT FROM THE SAME 审中-公开
标题翻译：磁阻存储器和读出方法FOR HIS
公开(公告)号：WO0247089A2
公开(公告)日：2002-06-13
申请号：PCT/DE0104400
申请日：2001-11-22
申请人： INFINEON TECHNOLOGIES AG , THEWES ROLAND , WEBER WERNER , BERG HUGO VAN DEN
发明人： THEWES ROLAND , WEBER WERNER , VAN DEN BERG HUGO
IPC分类号： G11C11/15 , G11C11/16 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15 , G11C11/16
摘要： The invention relates to a magnetoresistive memory and is characterized by a control circuit (1) with a first pole which, via a reading distributor (14), can be individually connected to first ends of bit lines (4a, 4b) by means of switching elements (8a, 8b). Said control circuit also has a second pole, which supplies power to an evaluator (2), and has a third pole that is connected to a reference voltage source (U5). The readout circuit additionally comprises a third voltage source (U3) having a voltage, which is approximately equal to the voltage of the first reading voltage source (U1) and which can be individually connected to second ends of the bit lines (4a, 4b) by means of switching elements (9a, 9b). Finally, the readout circuit comprises a fourth voltage source (U4), which can be individually connected to second ends of the word lines (5a, 5b) by means of switching elements (7a, 7b).
摘要翻译：用于磁 - 电阻性存储器的读出电路，其包括具有第一端的控制电路（1）的经由读分配器（14）由开关元件（8A，8B）与位线的第一端（4A，4B）可被单独地连接; 在评估器（一个或多个）将其当前的第二极; 连接，以及第三极，其连接到基准电压源（U5）; 第三电压源（U3）具有电压近似等于所述第一读取电压源（U1）的电压和通过开关元件89A，9B）与位线（4a的第二端部，4B）可被单独地连接; 和第四电压源（U4），它经由开关元件（7A，7B）的字线的第二端（5A，5B）可以被单独地连接。

2. 发明申请

WO0002006A2 METHOD FOR REGULATING THE MAGNETIZATION OF THE BIAS LAYER OF A MAGNETORESISTIVE SENSOR ELEMENT, SENSOR ELEMENT OR SENSOR ELEMENT SYSTEM PROCESSED ACCORDING TO SAID METHOD AND SENSOR ELEMENT AND SENSOR SUBSTRATE SUITABLE FOR THE IMPLEMENTATION OF SAID METHOD 审中-公开
标题翻译：方法用于设置磁阻传感器的部分，因此EDITED传感器元件或传感器元件的倾斜层和系统的磁化FOR实现适当的传感器元件和传感器基板
公开(公告)号：WO0002006A2
公开(公告)日：2000-01-13
申请号：PCT/DE9902017
申请日：1999-07-01
申请人： SIEMENS AG , BERG HUGO VAN DEN , MATTHEIS ROLAND
发明人： VAN DEN BERG HUGO , MATTHEIS ROLAND
IPC分类号： H01F13/00 , G01B7/30 , G01R33/09 , H01L43/12 , G01B7/00
CPC分类号： B82Y25/00 , G01B7/30 , G01R33/093 , H01L43/12
摘要： The invention relates to a method for regulating the magnetization of at least one bias layer of a magnetoresistive sensor element, whereby the bias layer is part of an AAF (artificial antiferromagnetic) system consisting of at least one bias layer, at least one flux conducting layer and at least one connecting layer that is arranged between said layers and connects them antiferromagnetically. The inventive method comprises the following steps: a) the sensor element is heated to above a predetermined temperature (Ts) or cooled to below a predetermined temperature (Ts), b) a magnetic regulating field (Hein) is applied during and/or after heating or cooling, c) the regulating field (Hein) is no longer applied after a predetermined time period, and d) the temperature is brought back to the initial temperature.
摘要翻译：设置一个磁阻传感器元件中的至少一个偏置层的磁化，其中AAF系统（人造抗铁磁系统）的偏置层部分布置由至少一个偏置层的，至少一个磁通导向层和它们之间的至少一个，两个层反铁磁性耦合的方法耦合层，其包括以下步骤：a）所述传感器元件的加热或冷却是高于还是低于一个预定的温度（Ts）中，b）期间和/或加热或冷却之后，c）中切断Einstellfelds施加磁Einstellfelds（海因）（海因）在预定的时间之后，d）将温度返回到起始温度。

3. 发明申请

WO02103702A3 DIGITAL STORAGE CELL DEVICE 审中-公开
标题翻译： DIGITAL内存单元组件
公开(公告)号：WO02103702A3
公开(公告)日：2003-06-26
申请号：PCT/DE0202187
申请日：2002-06-14
申请人： INFINEON TECHNOLOGIES AG , MATTHEIS ROLAND , VAN DEN BERG HUGO
发明人： MATTHEIS ROLAND , VAN DEN BERG HUGO
IPC分类号： G11C11/16 , H01F10/32
CPC分类号： G11C11/16
摘要： The invention relates to a digital magnetic storage cell device for reading and/or writing operations that comprises a soft-magnetic reading and/or writing layer system and at least one hard-magnetic reference layer system, which is provided in the form of an AAF system and has at least one reference layer. The reference layer system has a layer section comprising at least one bias layer system with at least one ferrimagnetic layer, whereby the magnetic moments of the bias layer system and of the reference layer are coupled in an opposed manner via a coupling layer.
摘要翻译：对读取的数字磁存储单元装置和/或写操作，具有软磁性的读取和/或写入层系统和至少一个硬磁性且设计为具有至少一个参考层的AAF系统参考层系统，参考层系统包括包含具有至少一个铁磁层的至少一个偏置层系统中的层部分其耦合与偏置层系统的磁矩，并且经由耦合层相对的参考层。

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