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1. 发明申请

WO2011090852A2 THROUGH SILICON VIA LITHOGRAPHIC ALIGNMENT AND REGISTRATION 审中-公开
标题翻译：通过光刻对齐和注册来实现硅通孔
公开(公告)号：WO2011090852A2
公开(公告)日：2011-07-28
申请号：PCT/US2011020913
申请日：2011-01-12
申请人： IBM , HERRIN RUSSELL T , LINDGREN PETER J , SPROGIS EDMUND J , STAMPER ANTHONY K
发明人： HERRIN RUSSELL T , LINDGREN PETER J , SPROGIS EDMUND J , STAMPER ANTHONY K
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , G03F9/7076 , G03F9/708 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing an integrated circuit structure forms a first opening in a substrate (100; Figure 1) and lines the first opening with a protective liner. (102) The method deposits a material into the first opening (104) and forms a protective material over the substrate. The protective material includes a process control mark and includes a second opening above, and aligned with, the first opening. (108) The method removes the material from the first opening through the second opening in the protective material. (110) The process control mark comprises a recess within the protective material that extends only partially through the protective material, such that portions of the substrate below the process control mark are not affected by the process of removing the material.
摘要翻译：制造集成电路结构的方法在衬底（100;图1）中形成第一开口并用保护性衬垫排列第一开口。（102）该方法将材料沉积到第一开口（104）中并且在衬底上形成保护材料。保护材料包括过程控制标记并且包括在第一开口上方并与第一开口对齐的第二开口。（108）该方法通过保护材料中的第二开口从第一开口移除材料。（110）过程控制标记包括保护材料内的凹部，其仅部分地延伸穿过保护材料，使得过程控制标记下方的部分基板不受移除材料的过程的影响。

2. 发明申请

WO2008091923A3 REMOVAL OF ETCHING PROCESS RESIDUAL IN SEMICONDUCTOR FABRICATION 审中-公开
标题翻译：在半导体制造中去除蚀刻工艺残留
公开(公告)号：WO2008091923A3
公开(公告)日：2009-12-30
申请号：PCT/US2008051758
申请日：2008-01-23
申请人： IBM , HERRIN RUSSELL T , LINDGREN PETER J , STAMPER ANTHONY K
发明人： HERRIN RUSSELL T , LINDGREN PETER J , STAMPER ANTHONY K
IPC分类号： C11D7/00
CPC分类号： H01L23/5223 , H01L21/02063 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure and methods for forming the same. A semiconductor fabrication method includes steps of providing a structure. A structure incl udes (a) a dielectric layer, (b) a first electrically conductive region buried in the dielectric layer, wherein the first electrically conductive region comprises a first electrically conductive material, and (c) a second electrically conductive region buried in the dielectric layer, wherein the second electrically conductive region comprises a second electrically conductive material being different from the first electrically conductive material. The method further includes the steps of creating a first hole and a second hole in the dielectric layer resulting in the first and second electrically conductive regions being exposed to a surrounding ambient through the first and second holes, respectively. Then, the method further includes the steps of introducing a basic solvent to bottom walls and side walls of the first and second holes.
摘要翻译：半导体结构及其形成方法。半导体制造方法包括提供结构的步骤。一种结构包括（a）介电层，（b）掩埋在所述电介质层中的第一导电区域，其中所述第一导电区域包括第一导电材料，和（c）第二导电区域，介电层，其中第二导电区域包括不同于第一导电材料的第二导电材料。该方法还包括以下步骤：在电介质层中形成第一孔和第二孔，导致第一和第二导电区域分别通过第一孔和第二孔暴露于周围环境。然后，该方法还包括将碱性溶剂引入第一孔和第二孔的底壁和侧壁的步骤。

3. 发明申请

WO2007084982A2 DUAL-DAMASCENE PROCESS TO FABRICATE THICK WIRE STRUCTURE 审中-公开
标题翻译：双镶嵌法制作厚丝结构
公开(公告)号：WO2007084982A2
公开(公告)日：2007-07-26
申请号：PCT/US2007060767
申请日：2007-01-19
申请人： IBM , COOLBAUGH DOUGLAS D , DOWNES KEITH E , LINDGREN PETER J , STAMPER ANTHONY K
发明人： COOLBAUGH DOUGLAS D , DOWNES KEITH E , LINDGREN PETER J , STAMPER ANTHONY K
IPC分类号： H01L21/8242 , H01L21/20 , H01L21/302 , H01L21/4763
CPC分类号： H01L23/481 , H01L21/76808 , H01L21/76813 , H01L21/76832 , H01L23/5223 , H01L28/60 , H01L2221/1036 , H01L2924/0002 , H01L2924/00
摘要： A method and semiconductor device. In the method, at least one partial via (26) is etched in a stacked structure and a border (32) is formed about the at least one partial via (26). The method further includes performing thick wiring using selective etching while continuing via etching to at least one etch stop layer (22).
摘要翻译：一种方法和半导体器件。在该方法中，在堆叠结构中蚀刻至少一个部分通孔（26），并且围绕至少一个部分通孔（26）形成边界（32）。该方法进一步包括使用选择性蚀刻执行厚布线，同时经由蚀刻继续至少一个蚀刻停止层（22）。

4. 发明申请

WO2007084982A8 DUAL-DAMASCENE PROCESS TO FABRICATE THICK WIRE STRUCTURE 审中-公开
标题翻译：双面加工工艺制作厚度很大的结构
公开(公告)号：WO2007084982A8
公开(公告)日：2008-07-10
申请号：PCT/US2007060767
申请日：2007-01-19
申请人： IBM , COOLBAUGH DOUGLAS D , DOWNES KEITH E , LINDGREN PETER J , STAMPER ANTHONY K
发明人： COOLBAUGH DOUGLAS D , DOWNES KEITH E , LINDGREN PETER J , STAMPER ANTHONY K
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L21/76808 , H01L21/76813 , H01L21/76832 , H01L23/5223 , H01L28/60 , H01L2221/1036 , H01L2924/0002 , H01L2924/00
摘要： A method and semiconductor device. In the method, at least one partial via (26) is etched in a stacked structure and a border (32) is formed about the at least one partial via (26). The method further includes performing thick wiring using selective etching while continuing via etching to at least one etch stop layer (22).
摘要翻译：一种方法和半导体器件。在该方法中，至少一个部分通孔（26）以堆叠结构被蚀刻，并且围绕至少一个部分通孔（26）形成边界（32）。该方法还包括使用选择性蚀刻执行厚布线，同时继续蚀刻至少一个蚀刻停止层（22）。

5. 发明申请

WO2006127859A3 DISTRIBUTED AND INTERACTIVE DATABASE ARCHITECTURE FOR PARALLEL AND ASYNCHRONOUS DATA PROCESSING OF COMPLEX DATA AND FOR REAL-TIME QUERY PROCESSING 审中-公开
标题翻译：分布式和交互式数据库架构，用于并行和非同步数据处理复杂数据和实时查询处理
公开(公告)号：WO2006127859A3
公开(公告)日：2008-10-23
申请号：PCT/US2006020165
申请日：2006-05-23
申请人： EXPERIAN MARKETING SOLUTIONS I , BALKIR NEVZAT HURKAN , GUTCHELL MARC LOUIS , LINDGREN PETER J , TAGLIERE ERIC MICHAEL
发明人： BALKIR NEVZAT HURKAN , GUTCHELL MARC LOUIS , LINDGREN PETER J , TAGLIERE ERIC MICHAEL
IPC分类号： G06F17/30
CPC分类号： G06F17/30516 , G06F17/30 , G06F17/30368 , G06F17/30569 , G06F17/30592 , G06F17/30867 , G06F17/30958 , G06Q30/02 , G06Q30/0241 , Y10S707/99948
摘要： The various embodiments of the invention provide a data processing system and method, for applications such as marketing campaign management, speech recognition and signal processing An exemplary system embodiment includes a first data repository (fig 4, item 320) adapted to store a plurality of entity and attribute data, a second data repository adapted to store a plurality of entity linkage data (fig 4, item 310), a metadata data repository adapted to store a plurality of metadata modules (fig 4, item 330), with a first metadata module having a plurality of selectable parameters, received through a control interface (fig 4, item 135), and having a plurality of metadata linkages to a first subset of metadata modules, and a multidimensional data structure The control interface may modify the plurality of selectable parameters in response to received control information A plurality of processing nodes (fig 4, items 335 and 355) are adapted to use the plurality of selectable parameters to assemble a first plurality of data from the first and second data repositories and from input data, to reduce the first plurality of data to form a second plurality of data, and to aggregate and dimension the second plurality of data for storage in the multidimensional data structure.
摘要翻译：本发明的各种实施例提供了用于诸如营销活动管理，语音识别和信号处理之类的应用的数据处理系统和方法。示例性系统实施例包括适于存储多个实体的第一数据存储库（图4，项目320）和属性数据，适于存储多个实体链接数据的第二数据仓库（图4，项目310），适用于存储多个元数据模块（图4，项目330））的元数据数据仓库，其具有第一元数据模块具有多个可选参数，通过控制接口（图4，项目135）接收并具有与元数据模块的第一子集有多个元数据链接，以及多维数据结构。控制接口可以修改多个可选参数响应于所接收的控制信息，多个处理节点（图4，项目335和355）适于使用多个可选参数t o从第一和第二数据存储库和输入数据组装第一多个数据，以减少第一多个数据以形成第二多个数据，并且将第二多个数据进行聚合和维度以存储在多维数据中结构体。

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