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    • 1. 发明申请
    • OPTICAL WAVEGUIDE WITH EMBEDDED LIGHT-REFLECTING FEATURE AND METHOD FOR FABRICATING THE SAME
    • 具有嵌入式光反射特征的光波导及其制造方法
    • WO2010116291A3
    • 2011-05-05
    • PCT/IB2010051397
    • 2010-03-31
    • IBMDANGEL ROGER FHORST FOLKERTLAMPRECHT TOBIAS POFFREIN BERT JAN
    • DANGEL ROGER FHORST FOLKERTLAMPRECHT TOBIAS POFFREIN BERT JAN
    • G02B6/138G02B6/122G02B6/42
    • G02B6/12002G02B6/125G02B6/138G02B6/4224G02B2006/12104
    • The invention is directed to a method for fabricating an optical waveguide (100). Basically, it relies on setting on the lower cladding(11), both the waveguide cores (26L-48l) and light-reflecting features (23 -23c), e.g. mirrors or fiducial markers. The reflecting features and the waveguide cores constitute a core layer having an open structure. An upper cladding polymer (31) is then applied, which embeds the light-reflecting features and the waveguides. Thus, the upper cladding applied fills the space left vacant by the open structures. The components of the core layer are accordingly set in place during the fabrication process, before filling the cladding at the level at which they are located. Since the light reflecting features and waveguide cores can be set with high accuracy on the lower cladding (before applying the upper cladding), the problems of reworking (e.g. dicing) or refining position of a light-reflecting feature inserted a posteriori is circumvented. Advantageously, both the waveguide cores and reflecting feature scan be patterned onto the lower cladding. The reflecting features may further be obtained from a selective metallization process.
    • 本发明涉及一种制造光波导(100)的方法。 基本上,它依赖于在下包层(11)上设置波导芯(26L-481)和光反射特征(23-33c)两者。 镜子或基准标记。 反射特征和波导芯构成具有开放结构的芯层。 然后施加上包层聚合物(31),其嵌入光反射特征和波导。 因此,施加的上部包层填充由开放结构空出的空间。 因此,在制造过程中,在将包层置于其所处的水平面之前,将芯层的部件设置在适当位置。 由于可以在下部包层(在施加上部包层之前)以高精度设置光反射特征和波导芯,所以避免了插入后验的光反射特征的返工(例如切割)或精细位置的问题。 有利地,波导芯和反射特征扫描都被图案化到下包层上。 反射特征可以进一步从选择性金属化处理获得。
    • 3. 发明申请
    • SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE
    • 用于制造半导体结构的半导体结构和方法
    • WO2014083507A2
    • 2014-06-05
    • PCT/IB2013060435
    • 2013-11-27
    • IBMIBM CHINA INVEST CO LTDIBM RES GMBH
    • CZORNOMAZ LUKASFOMPEYRINE JEANHOFRICHTER JENSOFFREIN BERT JANRICHTER MIRJA
    • G02B6/12004H01L27/14H01L31/18Y02P70/521
    • A semiconductor structure (1) comprises a processed semiconductor substrate (2) including active electronic components (3); a dielectric layer (4) covering at least partially the processed semiconductor substrate (2, 3); an interface layer (5) which is suitable for growing optically active material on the interface layer, wherein the interface layer (5) is bonded to the dielectric layer (4); wherein the optical gain layer (5) and the processed semiconductor substrate (2, 3) are connected through the dielectric layer (4) by electric and/or optical contacts (6). A method for fabricating a semiconductor structure (1) comprises: providing (S1) a processed semiconductor substrate (2) including active electronic components (3); depositing (S2) a dielectric layer (4) covering at least partially the processed semiconductor substrate (2, 3); bonding (S4) an interface layer (5) to the dielectric layer (4), wherein the interface layer (5) is suitable for growing optically active material on the interface layer; and connecting (S7) the interface layer (5) and the processed semiconductor substrate (2, 3) with each other through the dielectric layer (4) by electric and/or optical contacts (6).
    • 半导体结构(1)包括具有有源电子部件(3)的被处理半导体基板(2)。 至少部分地覆盖经处理的半导体衬底(2,3)的介电层(4); 界面层(5),其适于在所述界面层上生长光学活性材料,其中所述界面层(5)结合到所述介电层(4)上; 其中所述光学增益层(5)和经处理的半导体衬底(2,3)通过电和/或光学触点(6)通过介电层(4)连接。 一种制造半导体结构(1)的方法包括:提供(S1)包括有源电子部件(3)的处理的半导体衬底(2); 沉积(S2)至少部分地覆盖经处理的半导体衬底(2,3)的介电层(4); 将界面层(5)接合(S4)到介电层(4),其中界面层(5)适于在界面层上生长光学活性材料; 以及通过电和/或光触点(6)通过介电层(4)将界面层(5)和处理后的半导体衬底(2,3)(S7)彼此连接(S7)。