专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2003098680A1 CHEMICAL MECHANICAL PLANARIZATION OF LOW DIELECTRIC CONSTANT MATERIALS 审中-公开
标题翻译：低介电常数材料的化学机械平面化
公开(公告)号：WO2003098680A1
公开(公告)日：2003-11-27
申请号：PCT/US2003/015224
申请日：2003-05-13
申请人： HONEYWELL INTERNATIONAL INC. , ZHANG, Fan , TOWERY, Daniel , LIU, Feng Quan
发明人： ZHANG, Fan , TOWERY, Daniel , LIU, Feng Quan
IPC分类号： H01L21/461
CPC分类号： C09K3/1472 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/31053 , H01L21/31058
摘要： The present invention relates to apparatus, procedures, and compositions for avoiding and reducing damage to low dielectric constant materials and other soft materials, such as Cu and Al, used in fabricating semiconductor devices. Damage reduction can be achieved by decreasing the role of mechanical abrasion in the CMP of these materials and increasing the role of chemical polishing, which can improve material removal rates. Increasing the role of chemical polishing can be accomplished by creating a polishing slurry, (5) which contains components that interact chemically with the surface (1) to be polished. This slurry (5) may or may not also contain soft abrasive particles, which replace the hard abrasive particles of conventional slurries. Use of soft abrasive particles can reduce the role of mechanical abrasion in the CMP process. Use of this slurry (5) in CMP can reduce surface scratches and device damage.
摘要翻译：本发明涉及用于避免和减少用于制造半导体器件的低介电常数材料和其它软材料（例如Cu和Al）的损伤的装置，程序和组合物。通过减少这些材料的CMP中的机械磨损的作用并增加化学抛光的作用可以减少损伤，这可以提高材料去除率。增加化学抛光的作用可以通过产生抛光浆料（5）来实现，该抛光浆料包含与要抛光的表面（1）化学反应的成分。该浆料（5）可以含有也可以不含有软磨料颗粒，其代替常规浆料的硬磨料颗粒。使用软磨粒可以减少CMP工艺中机械磨损的作用。在CMP中使用这种浆料（5）可以减少表面划痕和器件损坏。

2. 发明申请

WO2004015018A1 REACTIVE AQUEOUS METAL OXIDE SOLS AS POLISHING SLURRIES FOR LOW DIELECTRIC CONSTANT MATERIALS 审中-公开
标题翻译：反应性水性金属氧化物溶液作为低介电常数材料的抛光液
公开(公告)号：WO2004015018A1
公开(公告)日：2004-02-19
申请号：PCT/US2003/019727
申请日：2003-06-19
申请人： HONEYWELL INTERNATIONAL INC. , TOWERY, Daniel , FURY, Michael
发明人： TOWERY, Daniel , FURY, Michael
IPC分类号： C09G1/02
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31058
摘要： An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be coformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.
摘要翻译：已经开发了用于去除低介电常数材料的金属氧化物溶胶浆料水溶液。使用以胶体悬浮液或分散体形成的非脱水化学活性金属氧化物溶胶，直接在溶液中形成浆液。氧化物溶胶没有经历任何随后的干燥，并且所述颗粒被认为在结构上基本上是球形的，尺寸稳定的并且不随时间改变形状。溶胶颗粒机械柔软并且水分高，即使在软质聚合物或多孔电介质膜被抛光的情况下也能降低表面损伤。溶胶颗粒由化学活性金属氧化物材料或其组合形成，或者可以涂覆在化学惰性氧化物材料如二氧化硅上，或者可与其共形。氧化物溶胶可以包括双模态粒子分布。浆料可用于CMP工艺，有或没有调理。

3. 发明申请

WO2002059393A1 COMPOSITION FOR CHEMICAL MECHANICAL PLANARIZATION OF COPPER, TANTALUM AND TANTALUM NITRIDE 审中-公开
标题翻译：化学机械平衡的组合物，铜，钨和氮化钛
公开(公告)号：WO2002059393A1
公开(公告)日：2002-08-01
申请号：PCT/US2001/048867
申请日：2001-12-18
申请人： HONEYWELL INTERNATIONAL INC.
发明人： ZHANG, Fan , TOWERY, Daniel , LEVERT, Joseph , MUKHERJEE, Shyama
IPC分类号： C23F3/06
CPC分类号： C09G1/02 , C23F1/18 , C23F3/04 , C23F3/06 , H01L21/32115 , H01L21/3212 , H01L21/32134
摘要： Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.
摘要翻译：通过本发明的化学配方实现铜，钽和氮化钽表面的化学机械平面化或自旋蚀刻平面化。化学制剂可以任选地包括磨料颗粒，并且其可以是化学反应性的或惰性的。接触或非接触式CMP可以用本发明的化学配方进行。实现了对Cu和Ta / TaN的基本上1：1的去除率选择性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式