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1. 发明申请

WO2003088343A1 NEW POROGENS FOR POROUS SILICA DIELECTRIC FOR INTEGRAL CIRCUIT APPLICATIONS 审中-公开
标题翻译：用于整体电路应用的多孔硅电介质的新原理
公开(公告)号：WO2003088343A1
公开(公告)日：2003-10-23
申请号：PCT/US2002/015255
申请日：2002-04-10
申请人： HONEYWELL INTERNATIONAL, INC. , LU, Victor, Y. , LEUNG, Roger, Y. , DENG, Eric , XIE, Songyuan
发明人： LU, Victor, Y. , LEUNG, Roger, Y. , DENG, Eric , XIE, Songyuan
IPC分类号： H01L21/316
CPC分类号： C08J9/26 , C08J2201/046 , C08J2383/04 , C09D183/02 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953
摘要： The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.
摘要翻译：本发明涉及纳米多孔二氧化硅介电膜的制造以及包括这些改进膜的半导体器件和集成电路。使用含硅预聚物制备本发明的纳米多孔膜，并且通过允许通过无金属离子的鎓或亲核试剂催化剂在较低凝胶温度下进行交联的方法制备。

2. 发明申请

WO2003088344A1 LOW METAL POROUS SILICA DIELECTRIC FOR INTEGRAL CIRCUIT APPLICATIONS 审中-公开
标题翻译：用于集成电路应用的低金属多孔硅电介质
公开(公告)号：WO2003088344A1
公开(公告)日：2003-10-23
申请号：PCT/US2002/015256
申请日：2002-04-10
申请人： HONEYWELL INTERNATIONAL, INC. , LEUNG, Roger, Y. , DENG, Eric , XIE, Songyuan , LU, Victor, Y.
发明人： LEUNG, Roger, Y. , DENG, Eric , XIE, Songyuan , LU, Victor, Y.
IPC分类号： H01L21/316
CPC分类号： C08J9/26 , C08J2201/046 , C08J2383/04 , C09D183/02 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953
摘要： The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.
摘要翻译：本发明涉及纳米多孔二氧化硅介电膜的制造以及包括这些改进膜的半导体器件和集成电路。使用含硅预聚物制备本发明的纳米多孔膜，并且通过允许通过无金属离子的鎓或亲核试剂催化剂在较低凝胶温度下进行交联的方法制备。

3. 发明申请

WO2007053407A3 THICK CRACK-FREE SILICA FILM BY COLLOIDAL SILICA INCORPORATION 审中-公开
公开(公告)号：WO2007053407A3
公开(公告)日：2007-05-10
申请号：PCT/US2006/041719
申请日：2006-10-26
申请人： HONEYWELL INTERNATIONAL INC. , LEUNG, Roger, Y. , NEDBAL, Jan , CHEN, Jinghong , GEBREBRHAN, Amanuel, H. , MUNOZ, Beth, C.
发明人： LEUNG, Roger, Y. , NEDBAL, Jan , CHEN, Jinghong , GEBREBRHAN, Amanuel, H. , MUNOZ, Beth, C.
IPC分类号： C08L83/04 , C08K3/36
摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices, in particular for flat panel displays. A substantially crack-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, colloidal silica, an optional catalyst, and optional water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free silicon polymer film, having a thickness of from about 700 Å to about 20,000 Å, and a transparency to light in the range of about 400 nm to about 800 nm of about 90% or more.

4. 发明申请

WO2004027850A1 INTERLAYER ADHESION PROMOTER FOR LOW K MATERIALS 审中-公开
标题翻译：用于低K材料的层间粘合促进剂
公开(公告)号：WO2004027850A1
公开(公告)日：2004-04-01
申请号：PCT/US2002/029975
申请日：2002-09-20
申请人： HONEYWELL INTERNATIONAL, INC. , LU, Victor , LEUNG, Roger, Y. , FAN, Wenya , NAMAN, Ananth , ZHOU, De-Ling
发明人： LU, Victor , LEUNG, Roger, Y. , FAN, Wenya , NAMAN, Ananth , ZHOU, De-Ling
IPC分类号： H01L21/316
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02362 , H01L21/314 , H01L21/31695 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer.
摘要翻译：本发明涉及多层电介质结构的制造以及包括这些结构的半导体器件和集成电路。本发明的结构通过将多孔电介质层通过中间粘合促进介电层粘附到基本上无孔的覆盖层来制备。制备多层电介质结构，其具有孔隙率为约10％以上的多孔介电层; b）多孔电介质层上的粘附促进介电层，其孔隙率为约10％或更小; 和在粘附促进电介质层上的基本上无孔的覆盖层。

5. 发明申请

WO2014197346A1 LIQUID TITANIUM OXIDE COMPOSITIONS, METHODS FOR FORMING THE SAME, AND METHODS FOR ETCHING MATERIAL LAYERS OF OR OVERLYING SUBSTRATES USING THE SAME 审中-公开
标题翻译：液氧化钛组合物，其形成方法，以及使用其蚀刻或覆盖基材的材料层的方法
公开(公告)号：WO2014197346A1
公开(公告)日：2014-12-11
申请号：PCT/US2014/040443
申请日：2014-06-02
申请人： HONEYWELL INTERNATIONAL INC.
发明人： XU, Helen, X. , SPEAR, Richard, A. , LEUNG, Roger, Y. , METIN, Lea, M. , XIE, Songyuan , WU, Zeyu, Benjamin , KENNEDY, Joseph
IPC分类号： C09D1/00 , C01G23/04 , B01J13/00
CPC分类号： H01L21/3081 , C01G23/04 , C09D1/00 , C09D7/20
摘要： Liquid titanium oxide compositions, methods for forming such compositions, and methods for etching material layers using such compositions are provided. In accordance with an exemplary embodiment, a liquid titanium oxide composition contains a solvent system, an organotitanate, and a high boiling point solvent having a boiling point in the range of about 140°C to about 400°C.
摘要翻译：提供液体二氧化钛组合物，形成这种组合物的方法，以及使用这种组合物蚀刻材料层的方法。根据示例性实施方案，液体氧化钛组合物含有溶剂体系，有机钛酸盐和沸点在约140℃至约400℃范围内的高沸点溶剂。

6. 发明申请

WO2006033836A3 TREATING AGENT MATERIALS 审中-公开
公开(公告)号：WO2006033836A3
公开(公告)日：2006-03-30
申请号：PCT/US2005/031936
申请日：2005-09-07
申请人： HONEYWELL INTERNATIONAL INC.
发明人： BHANAP, Anil, S. , KOROLEV, Boris, A. , LEUNG, Roger, Y. , MUNOZ, Beth, C. , RAMOS, Teresa, A. , ROTH, Robert, R. , APEN, Paul, G. , ENDISCH, Denis, H. , DANIELS, Brian, J. , NAMAN, Ananth , IWAMOTO, Nancy
IPC分类号： H01L21/3105 , H01L21/316
摘要： A treating agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent which may be an acid, a base, an onium compound, a dehydrating agent, and combinations thereof, and an optional solvent or mixture of a main solvent and a co-solvent.

7. 发明申请

WO2005034194A2 REPAIRING DAMAGE TO LOW-K DIELECTRIC MATERIALS USING SILYLATING AGENTS 审中-公开
标题翻译：使用硅化剂修复低K电介质材料的损伤
公开(公告)号：WO2005034194A2
公开(公告)日：2005-04-14
申请号：PCT/US2004/031995
申请日：2004-09-24
申请人： HONEYWELL INTERNATIONAL INC.
发明人： BHANAP, Anil, S. , RAMOS, Teresa, A. , IWAMOTO, Nancy , LEUNG, Roger, Y.
IPC分类号： H01L
CPC分类号： H01L21/31058 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L2924/0002 , H01L2924/00
摘要： A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobocity of the organosilicate glass dielectric film.
摘要翻译：用于恢复已经经历蚀刻剂或灰化处理的有机硅酸盐玻璃介电膜表面的疏水性的方法。这些薄膜被用作集成电路制造中的绝缘材料，以确保这些薄膜具有低且稳定的介电性能。该方法阻止这些膜中形成应力诱导的空隙。通过使有机硅酸盐玻璃电介质膜经历蚀刻剂或灰化试剂以形成通路和沟槽，以去除至少一部分先前存在的含碳部分并降低所述有机硅酸盐玻璃电介质膜的疏水性。之后用金属填充通孔和沟槽并进行退火处理。在薄膜经受蚀刻剂或灰化试剂之后，但在进行退火处理之前，薄膜与增韧剂组合物接触以恢复一些含碳部分并增加有机硅酸盐玻璃介电膜的疏水性。 / p>

8. 发明申请

WO2003070809A3 ORGANOSILOXANES AND THEIR USE IN DIELECTRIC FILMS OF SEMICONDUCTORS 审中-公开
公开(公告)号：WO2003070809A3
公开(公告)日：2003-08-28
申请号：PCT/US2003/005171
申请日：2003-02-19
申请人： HONEYWELL INTERNATIONAL INC.
发明人： BEDWELL, William, B. , MUKHERJEE, Shyama, P. , MORO, Lorenza , XIE, Songyuan , NEDBAL, Jan , IWAMOTO, Nancy , LEUNG, Roger, Y. , HACKER, Nigel, P.
IPC分类号： C08G77/20
摘要： The present invention provides an organosiloxane comprising at least 80 weight percent of Formula (I): (Y O-01-1,O SiO 1.5-2 ] a [Z 0.01-1.0 SiO 1.5-2 ]b[H 0.01-1.0 SiO 1.5-2 ] c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula (I); b is from 2 percent to 50 percent of Formula (I); and c is from 20 percent to 80 percent of Formula (I). The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.

9. 发明申请

WO2003070809A2 ORGANOSILOXANES 审中-公开
标题翻译：有机硅氧烷
公开(公告)号：WO2003070809A2
公开(公告)日：2003-08-28
申请号：PCT/US2003/005171
申请日：2003-02-19
申请人： HONEYWELL INTERNATIONAL INC.
发明人： BEDWELL, William, B. , MUKHERJEE, Shyama, P. , MORO, Lorenza , XIE, Songyuan , NEDBAL, Jan , IWAMOTO, Nancy , LEUNG, Roger, Y. , HACKER, Nigel, P.
IPC分类号： C08G77/20
CPC分类号： C09D183/04 , C08G77/04 , C08G77/12 , C08G77/20 , G03F7/0751 , H01L21/02126 , H01L21/02211 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/76807 , H01L21/76829 , H01L21/76835 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: (Y O-01-1,O SiO 1.5-2 ] a [Z 0.01-1.0 SiO 1.5-2 ]b[H 0.01-1.0 SiO 1.5-2 ] c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.
摘要翻译：本发明提供了包含至少80重量％的式I的有机硅氧烷：（YO-01-1，OSiO1.5-2] a [Z0.01-1.0SiO1.5-2] b [H0.01-1.0SiO1 .5-2] c其中Y是芳基; Z是烯基; a是式I的15％到70％; b是2％到50％的式I; c是20％到80％的式本发明的有机硅氧烷可用作陶瓷粘合剂，高温密封剂和纤维基质粘合剂。本组合物还可用作粘合促进剂，因为当与非微电子或微电子应用中的其它材料结合时，其显示出良好的粘合性能优选地，本发明的组合物用作微电子应用中的蚀刻停止，硬掩模和电介质。

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