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1. 发明申请

WO03044078A9 ANTI-REFLECTIVE COATINGS FOR PHOTOLITHOGRAPHY AND METHODS OF PREPARATION THEREOF 审中-公开
标题翻译：用于光刻胶的抗反射涂层及其制备方法
公开(公告)号：WO03044078A9
公开(公告)日：2004-01-08
申请号：PCT/US0236327
申请日：2002-11-12
申请人： HONEYWELL INT INC , BALDWIN TERESA , KENNEDY JOSEPH , IWAMOTO NANCY , NAKANO TADASHI , BEDWELL WILLIAM , STUCK JASON , HEBERT MELLO , SUEDMEYER ARLENE
发明人： BALDWIN TERESA , KENNEDY JOSEPH , IWAMOTO NANCY , NAKANO TADASHI , BEDWELL WILLIAM , STUCK JASON , HEBERT MELLO , SUEDMEYER ARLENE
IPC分类号： C08G77/04 , C09D183/04 , G03F7/09 , C08G77/08 , C08G77/18
CPC分类号： C08G77/04 , C09D183/04 , G03F7/091
摘要： Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.
摘要翻译：用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种封端剂，至少一种流平剂，至少一种催化剂，至少一种替代溶剂，至少一种pH调节剂和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。合适的吸收化合物是可以在光刻中使用的波长如365nm，248nm，193nm和157nm的那些吸收化合物。

2. 发明申请

WO2004044025A8 ANTI-REFLECTIVE COATINGS FOR PHOTOLITHOGRAPHY AND METHODS OF PREPARATION THEREOF 审中-公开
标题翻译：用于光刻的抗反射涂层及其制备方法
公开(公告)号：WO2004044025A8
公开(公告)日：2004-10-07
申请号：PCT/US0336354
申请日：2003-11-12
申请人： HONEYWELL INT INC , BALDWIN TERESA , KENNEDY JOSEPH , IWAMOTO NANCY , NAKANO TADASHI , BEDWELL WILLIAM , STUCK JASON , SUEDEMEYER ARLENE , HEBERT MELLO , LI BO
发明人： BALDWIN TERESA , KENNEDY JOSEPH , IWAMOTO NANCY , NAKANO TADASHI , BEDWELL WILLIAM , STUCK JASON , SUEDEMEYER ARLENE , HEBERT MELLO , LI BO
IPC分类号： C08G20060101 , C08G77/02 , C08G77/14 , C08G77/18 , C08G77/22 , C08L83/06 , C09D183/06 , C09D183/08 , G03F7/075 , G03F7/09
CPC分类号： C08G77/14 , C08G77/22 , C09D183/06 , C09D183/08 , G03F7/0757 , G03F7/091
摘要： Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one densifying agent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.
摘要翻译：用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种致密剂，至少一种封端剂，至少一种流平剂，至少一种催化剂，至少一种置换溶剂，至少一种pH调节剂和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。合适的吸收化合物是吸收可用于光刻的波长（例如365nm，248nm，193nm和157nm）附近的吸收化合物。

3. 发明申请

WO2004044025A3 ANTI-REFLECTIVE COATINGS FOR PHOTOLITHOGRAPHY AND METHODS OF PREPARATION THEREOF 审中-公开
标题翻译：用于光刻胶的抗反射涂层及其制备方法
公开(公告)号：WO2004044025A3
公开(公告)日：2004-07-15
申请号：PCT/US0336354
申请日：2003-11-12
申请人： HONEYWELL INT INC , BALDWIN TERESA , KENNEDY JOSEPH , IWAMOTO NANCY , NAKANO TADASHI , BEDWELL WILLIAM , STUCK JASON , SUEDEMEYER ARLENE , HEBERT MELLO , LI BO
发明人： BALDWIN TERESA , KENNEDY JOSEPH , IWAMOTO NANCY , NAKANO TADASHI , BEDWELL WILLIAM , STUCK JASON , SUEDEMEYER ARLENE , HEBERT MELLO , LI BO
IPC分类号： C08G20060101 , C08G77/02 , C08G77/14 , C08G77/18 , C08G77/22 , C08L83/06 , C09D183/06 , C09D183/08 , G03F7/075 , G03F7/09
CPC分类号： C08G77/14 , C08G77/22 , C09D183/06 , C09D183/08 , G03F7/0757 , G03F7/091
摘要： Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one densifying agent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.
摘要翻译：用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种致密化剂，至少一种封端剂，至少一种流平剂，至少一种催化剂，至少一种置换溶剂，至少一种pH调节剂，和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。合适的吸收化合物是可以在光刻中使用的波长如365nm，248nm，193nm和157nm的那些吸收化合物。

4. 发明申请

WO2011062391A3 COMPOSITION FOR AN ANTI-REFLECTION FILM HAVING IMPROVED MECHANICAL PROPERTIES 审中-公开
标题翻译：具有改进的机械性能的抗反射膜的组合物
公开(公告)号：WO2011062391A3
公开(公告)日：2011-11-03
申请号：PCT/KR2010007828
申请日：2010-11-08
申请人： APM INC , AHN KI HWAN , NAKANO TADASHI , YANG WOO HYOUNG , JUNG SO RA
发明人： AHN KI HWAN , NAKANO TADASHI , YANG WOO HYOUNG , JUNG SO RA
IPC分类号： C09D183/02
CPC分类号： C08G77/50 , C09D183/16 , G02B1/111 , G03F7/0752 , G03F7/091
摘要： The present invention relates to a composition for an anti-reflection film having improved mechanical properties, and, more specifically, a composition is provided for an anti-reflection film having improved mechanical properties, comprising: a polymer with an average molecular weight of from 500 to 300,000 which incorporates a vinyl-group-substituted, 3-functional silane represented by the general formula C2H4Si(OR)3 (where R is an alkyl group having no more than 6 carbon atoms); a micelle forming agent; a thermal radical initiator; and a solvent. Hence there is the advantage that the outstanding mechanical properties of the film can be improved, as compared with prior-art materials, by making it possible to form Si(-C)n-Si bonds in the structure by heat-treating the polymer, despite the reduction in mechanical strength which is induced by the structure of the film that is brought into being due to the micelle forming agent.
摘要翻译：本发明涉及具有改善的机械性能的抗反射膜用组合物，更具体地说，提供了具有改进的机械性能的抗反射膜的组合物，其包含：平均分子量为500的聚合物至30万，其中包含由通式C 2 H 4 Si（OR）3（其中R是不超过6个碳原子的烷基）表示的乙烯基取代的3-官能硅烷; 胶束形成剂; 热自由基引发剂; 和溶剂。因此，与现有技术的材料相比，通过使聚合物热处理可以在结构中形成Si（-C）n-Si键，可以提高膜的突出的机械性能，尽管由于由胶束形成剂引起的膜结构引起的机械强度降低。

5. 发明申请

WO2011013921A3 COMPOSITION FOR FORMING A COATING AND COATING APPLIED WITH THE COMPOSITION 审中-公开
标题翻译：用于形成涂料和涂料与组合物的组合物
公开(公告)号：WO2011013921A3
公开(公告)日：2011-06-16
申请号：PCT/KR2010004510
申请日：2010-07-12
申请人： APM INC , AHN KI HWAN , NAKANO TADASHI , YANG WOO HYOUNG , JUNG SO RA
发明人： AHN KI HWAN , NAKANO TADASHI , YANG WOO HYOUNG , JUNG SO RA
IPC分类号： C09D183/04 , C08L83/00 , C09D5/00 , C09D5/25 , C09D183/16
CPC分类号： C08G77/20 , C08K3/14 , C09D183/04
摘要： The present invention relates to a composition for forming a coating and to a coating applied with the composition, and more particularly, to a composition for forming a coating and to a coating applied with the composition, which significantly increase in coating hardness to ultimately enhance the durability of materials such as substrates on which the coating is applied, wherein the composition consists of: an oligomer obtained by simultaneously or sequentially polymerizing a 3-functional silane represented by the general formula R1SiX3, a 3-functional silane represented by the general formula R2SiX'3, and a 4-functional silane represented by the general formula SiX"4 (where R1 is either an alkyl group or a phenyl group, R2 is a hydrocarbon group which includes one or more unsaturated bonds, and X, X', and X" are mutually identical or different hydrolyzable groups); a radical initiator; and a solvent which dissolves the oligomer and the radical initiator, to significantly improve the hardness of the coating by means of a Si-(C-)nSi structure (where n is a natural number from 2 to 4), particularly by enabling heating during the polymerization of a siloxane oligomer as a starting material to produce up to 4 C bonds in an Si-C-Si bond.
摘要翻译：本发明涉及一种用于形成涂层的组合物和涂覆有组合物的涂层，更具体地涉及用于形成涂层的组合物和施加该组合物的涂层，其显着增加涂层硬度以最终增强涂层硬度通过使由通式R 1 SiX 3表示的3-官能性硅烷同时或依次聚合而得到的低分子化合物，由通式R 2 SiX 3表示的3-官能性硅烷， '3和由通式SiX“4表示的4-官能性硅烷（其中R 1为烷基或苯基，R 2为包含一个或多个不饱和键的烃基，X，X'和 X“相互相同或不同的可水解基团）; 一个激进的发起者以及溶解低聚物和自由基引发剂的溶剂，通过Si-（C-）nSi结构（其中n是2至4的自然数）显着提高涂层的硬度，特别是通过在硅氧烷低聚物作为原料的聚合，以在Si-C-Si键中产生高达4 C的键。

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