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    • 1. 发明申请
    • TARGET POSITIONING FOR MINIMUM DEBRIS
    • 目标定位最低限度
    • WO1989002157A1
    • 1989-03-09
    • PCT/US1988002881
    • 1988-08-23
    • HAMPSHIRE INSTRUMENTS, INC.
    • HAMPSHIRE INSTRUMENTS, INC.FRANKEL, Robert, D.DRUMHELLER, Jerry
    • H01J35/00
    • H05G2/001B82Y10/00G03F7/70033G03F7/70916G21B1/19Y02E30/16
    • An improved target (18, 44, 56, 66, 76 or 102) for use in a laser pulse (12 or 104) induced plasma X-ray lithography system (10 or 100) has a plurality of small holes (74 or 90) fabricated through a base (68 or 84) against which the laser beam (121 or 104) is focused. A film (70 or 86) covers each hole (74 or 90) and a thin layer of metal target material (72 or 88) is placed on the film (70 or 86). The thickness of the metal material (72 or 88) is selected to be sufficient to allow the complete ablation of the material during the existence of the laser beam (12 or 104) inducing the X-ray emitting plasma (20). In this manner, a minimal amount of debris (30) will be generated. The angle of the plane of the target (18, 44, 76 or 102) relative to the mask (24 or 110) plane and the angle of incidence of the laser beam (12 or 104) relative to the normal line to the target (18, 44, 76 or 102) are selected so that both the X-ray mask (24 or 110) and the laser beam (12 or 104) optical elements (113) are positioned in an area where few, if any, molten droplets of debris (30) are emitted.
    • 用于激光脉冲(12或104)感应等离子体X射线光刻系统(10或100)的改进目标(18,44,56,66,76或102)具有多个小孔(74或90) 通过激光束(121或104)聚焦的基座(68或84)制造。 薄膜(70或86)覆盖每个孔(74或90),薄膜(70或86)上放置一层金属靶材料(72或88)。 选择金属材料(72或88)的厚度足以允许在存在激光束(12或104)的情况下完全消融材料,诱导X射线发射等离子体(20)。 以这种方式,将产生最小量的碎屑(30)。 靶(18,44,76或102)相对于掩模(24或110)平面的角度和激光束(12或104)相对于目标的法线的入射角( 18,44,76或102),使得X射线掩模(24或110)和激光束(12或104)光学元件(113)都位于几个(如果有的话)熔融液滴 的碎片(30)被排出。
    • 4. 发明申请
    • MASS LIMITED TARGET
    • MASS有限公司目标
    • WO1989002154A1
    • 1989-03-09
    • PCT/US1988002882
    • 1988-08-23
    • HAMPSHIRE INSTRUMENTS, INC.
    • HAMPSHIRE INSTRUMENTS, INC.FRANKEL, Robert, D.DRUMHELLER, Jerry
    • G21K05/10
    • H05G2/001B82Y10/00G03F7/70033G03F7/70916G21B1/19Y02E30/16
    • An improved target (76) for use in an X-ray lithography system has a plurality of small holes (90) fabricated through a base (84) against which the laser beam is focused. A film (86) covers each hole (90) and a thin layer of metal target material (88) is placed on the film (86). The thickness of the metal material (88) is selected to be sufficient to allow the complete ablation of the material during the existence of the laser beam inducing the X-ray emitting plasma. In this manner, a minimal amount of debris will be generated. The angle of the plane of the target (76) relative to the mask plane and the angle of incidence of the laser beam relative to the normal line to the target (76) are selected so that both the X-ray mask and the laser beam optical elements are positioned in an area where few, if any, molten droplets of debris are emitted.
    • 用于X射线光刻系统的改进的目标(76)具有通过基底(84)制造的多个小孔(90),激光束聚焦在该基座上。 膜(86)覆盖每个孔(90),并且薄膜(86)上放置有薄金属靶材料(88)。 金属材料(88)的厚度被选择为足以允许在激光束存在期间完全消融材料以引起X射线发射等离子体。 以这种方式,将产生最小量的碎屑。 选择靶(76)相对于掩模平面的平面与激光束相对于与靶(76)的法线的入射角度的角度,使得X射线掩模和激光束 光学元件位于少量(如果有的话)碎屑的熔融液滴发射的区域中。
    • 6. 发明申请
    • X-RAY LITHOGRAPHY ALIGNMENT SYSTEM
    • X射线光刻对准系统
    • WO1991018259A1
    • 1991-11-28
    • PCT/US1991003563
    • 1991-05-20
    • HAMPSHIRE INSTRUMENTS, INC.
    • HAMPSHIRE INSTRUMENTS, INC.BONI, RobertFRANKEL, Robert, D.
    • G01B11/27
    • B82Y10/00G03F7/70033G03F9/7088
    • An alignment system (86) for an X-ray lighography system (10) has an objective lens (110) positioned over an alignment mark (98) placed on a conventional X-ray mask membrane (37). Four orthogonally mounted light sources (126, 128, 130, and 132) provides light at a wavelength adapted to pass through the membrane (37) material. A similar alignment mark (104) is positioned on the wafer (40) and as it approaches the position of the stationary mask mark (98), the light means (126, 128, 130, and 132) illuminates both marks (98 and 104). Because of the membrane (37) and wafer (40) separation, a portion of the imaged light is deflected along a longer path (114, 116, 118, and 120) and both images are focused on different portions of a charged coupled device (112). By illuminating the four light sources (126, 128, 130, and 132) one at a time, an improved image of the edges (134, 136, 138, and 140) of the marks (98 and 104) is obtained. The images are detected and processed to find when the centers of the two marks (98 and 104) are in alignment.
    • 用于X射线成像系统(10)的对准系统(86)具有位于放置在常规X射线掩模膜(37)上的对准标记(98)上方的物镜(110)。 四个正交安装的光源(126,128,130和132)提供适于穿过膜(37)材料的波长的光。 类似的对准标记(104)定位在晶片(40)上,并且当其接近固定掩模标记(98)的位置时,光装置(126,128,130和132)照亮标记(98和104) )。 由于膜(37)和晶片(40)分离,成像光的一部分沿着较长路径(114,116,118和120)偏转,并且两个图像聚焦在带电耦合器件的不同部分上 112)。 通过一次一个地照射四个光源(126,128,130和132),获得标记(98和104)的边缘(134,136,138和140)的改进图像。 检测和处理图像以查找两个标记(98和104)的中心何时对齐。
    • 7. 发明申请
    • MASK TRAY FOR AND METHOD OF LOADING MASK IN LITHOGRAPHY SYSTEM
    • 屏蔽系统中的掩模盘和加载掩模的方法
    • WO1991018401A1
    • 1991-11-28
    • PCT/US1991003564
    • 1991-05-20
    • HAMPSHIRE INSTRUMENTS, INC.
    • HAMPSHIRE INSTRUMENTS, INC.WHITCOMB, Preston, X.
    • G21K05/08
    • B82Y10/00G03F7/70033G03F7/707G03F7/70741H01L21/682
    • A mask tray (132), used to hold and guide an X-ray mask (38) to the exposure column (36) of an X-ray lithography system (10), includes first and second holding means (148, 150) which engage vertical mask channels (140, 142) in the mask support (136) to hold the mask (38) on the tray (132). The tray (132) is shaped as a wafer and is moved and loaded on the exposure column (36) using the same translation mechanism (16) used to transport wafers being processed. After the mask (38) is aligned with the exposure column (36), the translation mechanism (16) is moved in the Z direction. At the same time vacuum means (39) are engaged to hold the mask (38) on the column (36) and the holding means (148, 150) are released slightly, thereby permitting the mask (38) to jump the last few microns to the column (36). During the jump, the mask (38) is guided by the holding means (148, 150) remaining near the channels (140, 142). Special translation mechanism (16) movements are needed to remove the tray (132).
    • 用于将X射线掩模(38)保持并引导到X射线光刻系统(10)的曝光柱(36)的掩模托盘(132)包括第一和第二保持装置(148,150) 接合在掩模支撑件(136)中的垂直掩模通道(140,142)以将掩模(38)保持在托盘(132)上。 托盘(132)成形为晶片,并使用用于输送正在处理的晶片的相同的平移机构(16)移动并装载在曝光柱(36)上。 在掩模(38)与曝光柱(36)对准之后,平移机构(16)沿Z方向移动。 同时,真空装置(39)接合以将掩模(38)保持在柱(36)上,并且保持装置(148,150)被稍微释放,从而允许掩模(38)跳过最后几微米 到列(36)。 在跳跃期间,掩模(38)由保持在通道(140,142)附近的保持装置(148,150)引导。 需要特殊的平移机构(16)移动托盘(132)。
    • 8. 发明申请
    • POSITIONING SUBASSEMBLY FOR A LITHOGRAPHY MACHINE
    • 定位分层机
    • WO1989006376A1
    • 1989-07-13
    • PCT/US1988004673
    • 1988-12-28
    • HAMPSHIRE INSTRUMENTS, INC.
    • HAMPSHIRE INSTRUMENTS, INC.MARTIN, Marc, J.BAKER, David, G.DUFT, Thomas, L.
    • G03B27/42
    • G03F7/70691B82Y10/00G03F7/70033
    • A step and repeat mechanism (16), used with an X-ray lithography system (10) for moving a wafer (40) to be exposed from position to position beneath the source of X-rays (34), includes stages (46, and 48) for moving the wafer (40) to be exposed with six degrees of freedom. In addition, the mechanism (16) includes three motors (58-1, 58-2 and 58-3) for moving the wafer (40) in small increments in the Z direction. Sensors (74, 92, 94 and 96) are included for determining the plane of the mask (38) and the plane of each of the various sections (86) of wafer (40) to be exposed so that appropriate tip and tilt adjustments by the three fine Z motors (58-1, 58-2 and 58-3) can be made to cause the average plane of each section (86) of the wafer (40) to be parallel to the plane of the mask (38). Included in the mechanism (16) is a substage plate (50) which is adjusted by the three triangularly positioned fine Z motors (58-1, 58-2 and 58-3).
    • 与X射线光刻系统(10)一起使用的步骤和重复机构(16),用于移动待从X射线源(34)的下方的位置暴露的晶片(40) 和48),用于以六个自由度移动待暴露的晶片(40)。 此外,机构(16)包括用于在Z方向上以小增量移动晶片(40)的三个马达(58-1,58-2和58-3)。 包括传感器(74,92,94和96),用于确定掩模(38)的平面和要暴露的晶片(40)的各个部分(86)中的每一个的平面,以便适当的尖端和倾斜调整由 可以使三个细Z电动机(58-1,58-2和58-3)使得晶片(40)的每个部分(86)的平均平面平行于掩模(38)的平面, 。 机构(16)包括由三个三角定位的精细Z马达(58-1,58-2和58-3)调节的分段板(50)。