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1. 发明申请

WO2004036656A2 NON-DESTRUCTIVE ANALYSIS METHOD FOR DETERMINING THE QUALITY OF A SOLAR CELL, AND APPLICATION OF THE SAME 审中-公开
标题翻译：无破坏分析方法用于太阳能电池及其使用质量评价。
公开(公告)号：WO2004036656A2
公开(公告)日：2004-04-29
申请号：PCT/DE0303372
申请日：2003-10-09
申请人： HAHN MEITNER INST BERLIN GMBH , LUCK ILKA , RUDIGIER EVELINE , SCHEER ROLAND
发明人： LUCK ILKA , RUDIGIER EVELINE , SCHEER ROLAND
IPC分类号： G01N21/65 , H01L31/00
CPC分类号： G01N21/65
摘要： Known analysis methods do not enable a correlation to be identified between the structural properties of a semiconductor layer and the electrical properties of a solar cell mounted on the same. The inventive analysis method is based on rapid and non-destructive Raman spectroscopy by which means significant structural parameters (FWHM) relating to the structural properties of a processed absorber layer can be determined in a solar cell. The knowledge of such structural parameters enables a correlation to be established with electric parameters (Voc) which are relevant in terms of the expected electrical properties of the finished processed solar cell. A linear correlation is indicated between the parameters with a saturation region of satisfying electrical properties and a threshold value of a region of unsatisfying electrical properties of the solar cell. The inventive analysis method thus enables the electrical quality of the finished processed solar cell to be determined, exclusively from the structural parameters of the absorber layer. Accordingly, it can be decided in situ, in a production line for, for example, polycrystalline solar cells with heterojunctions, whether an absorber layer analysed ex situ can be reprocessed or must be extracted.
摘要翻译：随着分析的公知的方法可被检测的半导体层的结构特性和基于它的太阳能电池的电特性之间没有相关性。根据本发明的分析方法是基于快速和非破坏性拉曼光谱法，处理后的吸收体层的结构特性的显著结构参数（FWHM）可以在太阳能电池相对于找到。与具有用于完全处理太阳能电池的预期的电特性相关的电参数（VOC）的连接的这样的结构参数的知识然后制备。它示出了具有满意的电特性的饱和区域和限制值的太阳能电池的不令人满意的电特性的区域中的参数之间的线性关系。与根据本发明的分析方法中，吸收层，因此只能得出结论，完全加工的太阳能电池的从结构参数的当前知识的电质量。根据这一决定可以在一个生产线例如由直原位连接多晶太阳能电池是否非原位分析吸收层可以被进一步处理，或者需要进行排序。

2. 发明申请

WO02084729A3 METHOD FOR PRODUCING A CHALCOGENIDE-SEMICONDUCTOR LAYER OF THE ABC2 TYPE WITH OPTICAL PROCESS MONITORING 审中-公开
标题翻译：用于生产型ABC2的硫族化合物半导体层与光学过程控制
公开(公告)号：WO02084729A3
公开(公告)日：2003-04-10
申请号：PCT/DE0201342
申请日：2002-04-04
申请人： HAHN MEITNER INST BERLIN GMBH , SCHEER ROLAND , PIETZKER CHRISTIAN
发明人： SCHEER ROLAND , PIETZKER CHRISTIAN
IPC分类号： H01L21/477 , C23C14/06 , C23C16/52 , C23C16/56 , C30B25/10 , G01R31/26 , H01L21/00 , H01L21/06 , H01L21/16 , H01L21/302 , H01L21/461 , H01L21/66 , H01L31/0296 , H01L31/032 , H01L31/18 , H01L45/00
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： The aim of the invention is to provide a method for monitoring the chalcogenation process and, in doing so, to enable this process to be controlled and the determination of its end point. To this end, a method is used in which, during production, the resulting layer is irradiated with light, the reflected light is detected, and the light signal recorded according to time is assigned to characteristic points of the layer production. According to the method, the chalcogenide semiconductor layer is produced by firstly applying, in succession, both metallic precursor layers consisting of elements A and B, and a chalcogenation process with simultaneous optical process monitoring is subsequently carried out during which the series of layers A B is irradiated with light of at least one coherent light source. The light diffusely scattered on the surface is detected, and the scattered light signal measured according to time is evaluated whereby characteristic changes in the resulting layer during chalcogenation are assigned to four significant points of the scattered light curve.
摘要翻译：本发明的目的是提供用于控制chalcogenizing dadurGh提供一种方法和使过程的控制并确定其端点。这个目的是通过在其生产过程中所得到的层被光照射的方法来实现，检测反射光，并且所述硫族化物半导体层中产生的记录为定时光信号中的层形成的特征点是根据实现在本发明相关的功能由第一连续的元件A和B的两个金属前体层被施加，然后用同步光学过程控制一个Chalkogenisierungsprozess执行，其中，所述层序列AB照射至少一个相干光源的光，检测该漫散射光的表面上，和被评估为通过供给安排在Henden层Chakogenisierung期间的范围内的散射光信号曲线特定CHARAC-变化，使得4个显著点的散射光信号测量的时间的函数的是吨。

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