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    • 4. 发明申请
    • METHOD OF MAKING GLASS INCLUDING USE OF BORON OXIDE FOR REDUCING GLASS REFITING TIME
    • 制造玻璃的方法,包括使用氧化硼以减少玻璃反射时间
    • WO2007106274A3
    • 2008-05-15
    • PCT/US2007003753
    • 2007-02-12
    • GUARDIAN INDUSTRIESHULME RICHARDTHOMSEN SCOTT VPLATT KARL PLANDA LEONID M
    • HULME RICHARDTHOMSEN SCOTT VPLATT KARL PLANDA LEONID MLANDA KSENIA A
    • C03C3/078
    • C03C1/004C03C3/091
    • This invention relates to a method of making soda-lime-silica based glass. In certain example embodiments, boron oxide (e.g., B 2 O 3 ) is used in the glass for reducing the refining time (or increasing the refining rate) thereof. The boron oxide may be introduced into the glass batch or melt in the form of boric acid, sodium tetraborate pentahydrate, sodium tetraborate decahydrate, sodium pentahydrate, or in any other suitable form. In certain example embodiments, the resulting soda-lime-silica based glass ends up including from about 0.1 to 3%, more preferably from about 0.1 to 2.5%, and most preferably from about 0.5 to 2.0% (e.g., about 1%), boron oxide. It has been found that the use of boron oxide, and/or the form in which the same is introduced into the glass, is advantageous in that it permits the refining time of the glass to be substantially reduced.
    • 本发明涉及一种制造钠钙二氧化硅基玻璃的方法。 在某些示例性实施方案中,在玻璃中使用氧化硼(例如B 2 O 3 O 3)以减少精炼时间(或提高其提炼速度)。 或者以硼酸,四硼酸钠五水合物,四硼酸钠十水合物,五水合钠或任何其它合适形式的形式将硼氧化物引入玻璃批料或熔融。 在某些示例性实施方案中,所得到的钠钙二氧化硅基玻璃最终包括约0.1至3%,更优选约0.1至2.5%,最优选约0.5至2.0%(例如约1%), 氧化硼。 已经发现,使用氧化硼和/或将其引入玻璃中的形式是有利的,因为其允许玻璃的精炼时间显着降低。
    • 10. 发明申请
    • METHOD OF MAKING FRONT ELECTRODE OF PHOTOVOLTAIC DEVICE HAVING ETCHED SURFACE AND CORRESPONDING PHOTOVOLTAIC DEVICE
    • 具有蚀刻表面和相应光伏器件的光电器件的正面电极的制造方法
    • WO2010045041A2
    • 2010-04-22
    • PCT/US2009059478
    • 2009-10-05
    • GUARDIAN INDUSTRIESKRASNOV ALEXEYLU YIWEITHOMSEN SCOTT V
    • KRASNOV ALEXEYLU YIWEITHOMSEN SCOTT V
    • H01L31/18H01L31/0224H01L31/0236
    • H01L31/1884H01L31/022466H01L31/0236Y02E10/50
    • Certain example embodiments of this invention relate to a photovoltaic (PV) device including an electrode such as a front electrode/contact, and a method of making the same. In certain example embodiments, the front electrode has a textured (e.g., etched) surface that faces the photovoltaic semiconductor film of the PV device. The front electrode has a transparent conductive oxide (TCO) film having first and second layers (continuous or discontinuous) of the same material (e.g., zinc oxide, zinc aluminum oxide, indium-tin-oxide, or tin oxide), where the first TCO layer is sputter-deposited using a ceramic sputtering target(s) and the second TCO layer of the same material is sputter-deposited using a metallic or substantially metallic sputtering target(s). This allows the better quality TCO of the film, deposited more slowly via the ceramic target(s), to be formed using the ceramic target and the lesser quality TCO of the film to be deposited more quickly and cost effectively via the metallic target(s). After the etching, most or all of the better quality ceramic-deposited TCO remains whereas much of the lesser quality metallic-deposited TCO of the film was removed during the etching process.
    • 本发明的某些示例性实施例涉及包括诸如前电极/触点的电极的光伏(PV)装置及其制造方法。 在某些示例性实施例中,前电极具有面向PV器件的光电半导体膜的有纹理(例如蚀刻)的表面。 前电极具有透明导电氧化物(TCO)膜,其具有相同材料(例如氧化锌,氧化锌铝,氧化铟锡或氧化锡)的第一和第二层(连续或不连续),其中第一 使用陶瓷溅射靶溅射沉积TCO层,并且使用金属或基本上金属的溅射靶溅射沉积相同材料的第二TCO层。 这允许通过使用陶瓷靶材形成的通过陶瓷靶材更缓慢地沉积的膜的更好的质量TCO,并且通过金属靶材更快速且成本有效地沉积的膜的质量较差的TCO(s )。 在蚀刻之后,大部分或全部较好质量的陶瓷沉积的TCO保留,而在蚀刻过程中除去较薄质量的金属沉积的TCO。