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1. 发明申请

WO2009020524A1 RINSING METHODOLOGIES FOR BARRIER PLATE AND VENTURI CONTAINMENT SYSTEMS IN TOOLS USED TO PROCESS MICROELECTRONIC WORKPIECES WITH ONE OR MORE TREATMENT FLUIDS, AND RELATED APPARATUSES 审中-公开
标题翻译：用于加工具有一种或多种处理液的微电子工具的工具中的障板和VENTURI容纳系统的冲洗方法及相关装置
公开(公告)号：WO2009020524A1
公开(公告)日：2009-02-12
申请号：PCT/US2008/009015
申请日：2008-07-25
申请人： FSI INTERNATIONAL, INC. , DEKRAKER, David , COLLINS, Jimmy, D. , GAST, Tracy, A. , ROSE, Alan, D. , WILLIAMSON, Richard, E.
发明人： DEKRAKER, David , COLLINS, Jimmy, D. , GAST, Tracy, A. , ROSE, Alan, D. , WILLIAMSON, Richard, E.
IPC分类号： H01L21/00
CPC分类号： H01L21/67051
摘要： Tool for treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like. The invention provides an approach for rapid, efficient rinsing of wetted surface(s), and is particularly advantageous when used to rinse the lower surface of moveable barrier structures such as a barrier plate that overlies a workpiece being treated in such a manner to define a tapering flow channel over the workpiece. Rather than spray rinsing liquid onto the surface in a manner that generates undue splashing, droplet, or mist generation, the liquid is flowingly dispensed, preferably under laminar flow conditions, onto a surface that is in fluid communication with the surface to be rinsed. A smooth, uniform wetting and sheeting action results to accomplish rinsing with a significantly reduced risk of generating particle contamination.
摘要翻译：用一种或多种处理材料处理微电子工件的工具，包括液体，气体，流化固体，分散体，它们的组合等。本发明提供了一种用于快速，有效地冲洗湿润表面的方法，并且当用于冲洗可移动阻挡结构的下表面（例如覆盖待处理的工件的阻挡板）的下表面是特别有利的，以限定工件上的流通通道变细。不会以产生不适当的飞溅，液滴或雾气的方式将冲洗液体喷淋到表面上，液体优选地在层流条件下流动地分配到与要漂洗的表面流体连通的表面上。平滑，均匀的润湿和压片动作导致完成冲洗，并显着降低产生颗粒污染的风险。

2. 发明申请

WO2008008154A2 BARRIER STRUCTURE AND NOZZLE DEVICE FOR USE IN TOOLS USED TO PROCESS MICROELECTRONIC WORKPIECES WITH ONE OR MORE TREATMENT FLUIDS 审中-公开
标题翻译：用于加工具有一种或多种处理液的微电子工件的工具中使用的障碍物结构和喷嘴装置
公开(公告)号：WO2008008154A2
公开(公告)日：2008-01-17
申请号：PCT/US2007/014325
申请日：2007-06-20
申请人： FSI INTERNATIONAL, INC. , COLLINS, Jimmy, D. , DEKRAKER, David , GAST, Tracy, A. , ROSE, Alan, D.
发明人： COLLINS, Jimmy, D. , DEKRAKER, David , GAST, Tracy, A. , ROSE, Alan, D.
IPC分类号： H01L21/00
CPC分类号： H01L21/67051
摘要： The present invention provides a tool for treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like.
摘要翻译：本发明提供了一种用一种或多种处理材料处理微电子工件的工具，包括液体，气体，流化固体，分散体，它们的组合等。

3. 发明申请

WO2013003013A1 ACID TREATMENT STRATEGIES USEFUL TO FABRICATE MICROELECTRONIC DEVICES AND PRECURSORS THEREOF 审中-公开
标题翻译：用于制造微电子设备及其前身的酸处理策略
公开(公告)号：WO2013003013A1
公开(公告)日：2013-01-03
申请号：PCT/US2012/041832
申请日：2012-06-11
申请人： FSI INTERNATIONAL, INC. , DEKRAKER, David
发明人： DEKRAKER, David
IPC分类号： C23G1/02
CPC分类号： H01L21/67051 , H01L21/02052 , H01L21/02057
摘要： A method of treating one or more wafers is provided. The method comprises the steps of: a) providing at least one wafer, that has first and second opposed major faces and at least one feature, such as a metal silicide, that is sensitive to a neutralizing chemistry on the first major face; b) causing an acidic chemistry, such as a sulfuric acid and/or phosphoric acid, to contact the first major face of the wafer and causing the wafer to spin; c) after causing the acidic chemistry to contact the wafer, causing a non-etching rinsing fluid to contact the first major face while the wafer is spinning; and d) during at least a portion of the time that the non-etching rinsing fluid is caused to contact the first major face of the spinning wafer, causing a neutralizing liquid to contact the second major face of the spinning wafer.
摘要翻译：提供一种处理一个或多个晶片的方法。该方法包括以下步骤：a）提供至少一个晶片，其具有第一和第二相对的主面以及对第一主面上的中和化学物质敏感的至少一个特征，例如金属硅化物; b）使酸性化学物质如硫酸和/或磷酸与晶片的第一主面接触并使晶片旋转; c）在使酸性化学物质接触晶片之后，在晶片旋转时使非蚀刻冲洗液接触第一主面; 以及d）在非蚀刻冲洗液与纺丝晶片的第一主面接触的至少一段时间内，使中和液体接触旋转晶片的第二主面。

4. 发明申请

WO2009139816A1 PROCESS FOR TREATMENT OF SEMICONDUCTOR WAFER USING WATER VAPOR CONTAINING ENVIRONMENT 审中-公开
标题翻译：使用含水环境的半导体波形处理方法
公开(公告)号：WO2009139816A1
公开(公告)日：2009-11-19
申请号：PCT/US2009/002367
申请日：2009-04-16
申请人： FSI INTERNATIONAL, INC. , CHRISTENSON, Kurt, K. , DEKRAKER, David
发明人： CHRISTENSON, Kurt, K. , DEKRAKER, David
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： H01L21/02052
摘要： A process is provided for treating a semiconductor wafer at a target wafer temperature. This process includes the following steps: a) determining the target wafer temperature of the semiconductor wafer during a given wafer treatment process step; b) providing a treatment chamber having at least one semiconductor wafer disposed therein; c) dispensing water vapor into the treatment chamber in an amount to provide the chamber with an atmospheric environment having a dew point sufficiently close to the target wafer temperature to provide a temperature regulating effect; and d) initiating the given wafer treatment process step when the atmospheric environment of the treatment chamber is at the dew point of step c).
摘要翻译：提供了用于在目标晶片温度下处理半导体晶片的工艺。该过程包括以下步骤：a）在给定的晶片处理工艺步骤期间确定半导体晶片的目标晶片温度; b）提供具有设置在其中的至少一个半导体晶片的处理室; c）将水蒸气分配到处理室中，其量使得室具有露点足够靠近目标晶片温度的大气环境，以提供温度调节效果; 以及d）当处理室的大气环境处于步骤c）的露点时，启动给定的晶片处理工艺步骤。

5. 发明申请

WO2008143909A1 PROCESS FOR TREATMENT OF SUBSTRATES WITH WATER VAPOR OR STEAM 审中-公开
标题翻译：用水蒸气或蒸汽处理底物的方法
公开(公告)号：WO2008143909A1
公开(公告)日：2008-11-27
申请号：PCT/US2008/006198
申请日：2008-05-15
申请人： FSI INTERNATIONAL, INC. , BUTTERBAUGH, Jeffery, W. , DEKRAKER, David , WILLIAMSON, Richard, E.
发明人： BUTTERBAUGH, Jeffery, W. , DEKRAKER, David , WILLIAMSON, Richard, E.
IPC分类号： H01L21/306 , H01L21/02
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/6708
摘要： A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors. In another aspect, a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors are dispensed onto a portion of the substrate surface that is less than the entire surface of the substrate in an amount effective to treat the portion of the substrate surface, and the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate may be enveloped with a water vapor and/or a optionally nitrogen gas environment during the treatment steps.
摘要翻译：处理基材的方法在一个方面包括将其表面上具有材料的基材放置在处理室中; 引导液体处理组合物流冲击基底表面; 并引导水蒸汽流冲击基底表面和/或冲击液体处理组合物。本发明的一个优选的方面是从基底去除材料，优选光刻胶，其中处理组合物是包含硫酸和/或其干燥物质和前体的液体硫酸组合物。在另一方面，包含硫酸和/或其干燥物质和前体的液体硫酸组合物以有效处理基材部分的量分配到基材表面的小于基材整个表面的部分上表面，并且液体硫酸组合物暴露于水蒸汽中，其量有效地将液体硫酸组合物的温度升高到暴露于水蒸气之前的液体硫酸组合物的温度以上。在处理步骤期间，基底可以被水蒸气和/或任选的氮气环境包围。

6. 发明申请

WO2011156669A2 METHODOLOGIES FOR RINSING TOOL SURFACES IN TOOLS USED TO PROCESS MICROELECTRONIC WORKPIECES 审中-公开
标题翻译：用于加工微电子工件的工具中冲压工具表面的方法
公开(公告)号：WO2011156669A2
公开(公告)日：2011-12-15
申请号：PCT/US2011/039904
申请日：2011-06-10
申请人： FSI INTERNATIONAL, INC. , STIYER, Mark A. , DEKRAKER, David
发明人： STIYER, Mark A. , DEKRAKER, David
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/04
摘要： Rinsing methodologies and components to accomplish rinsing of tool surfaces in tools that are used to process one or more microelectronic workpieces. The invention can be used to rinse structures that overlie a workpiece being treated in such a manner to function in part as a lid over the process chamber while also defining a tapering flow channel over the workpiece. Rather than spray rinsing liquid onto the surface in a manner that generates undue splashing, droplet, or mist generation, a swirling flow of rinse liquid is generated on a surface of at least one fluid passage upstream from the surface to be rinsed. The swirling flow then provides smooth, uniform wetting and sheeting action to accomplish rinsing with a significantly reduced risk of generating particle contamination.
摘要翻译：冲洗方法和组件，用于在用于处理一个或多个微电子工件的工具中完成工具表面的冲洗。本发明可以用于冲洗覆盖在待处理工件上的结构，以使其部分地作为处理室上的盖而起作用，同时还在工件上限定了一个渐缩的流动通道。不会以产生不适当的飞溅，液滴或雾气的方式将冲洗液体喷淋到表面上，而是在要冲洗的表面上游的至少一个流体通道的表面上产生冲洗液体的旋转流。然后旋转流动提供平滑，均匀的润湿和薄片动作，以显着降低产生颗粒污染的风险来完成冲洗。

7. 发明申请

WO2011136913A1 WET PROCESSING OF MICROELECTRONIC SUBSTRATES WITH CONTROLLED MIXING OF FLUIDS PROXIMAL TO SUBSTRATE SURFACES 审中-公开
标题翻译：具有控制流体混合的微电子基底的湿处理以接地表面
公开(公告)号：WO2011136913A1
公开(公告)日：2011-11-03
申请号：PCT/US2011/031945
申请日：2011-04-11
申请人： FSI INTERNATIONAL, INC. , WAGENER, Thomas J. , BUTTERBAUGH, Jeffery W. , DEKRAKER, David
发明人： WAGENER, Thomas J. , BUTTERBAUGH, Jeffery W. , DEKRAKER, David
IPC分类号： B05B1/02
CPC分类号： H01L21/6708 , H01L21/67051
摘要： The present invention provides methods and apparatuses for controlling the transition between first and second treatment fluids during processing of microelectronic devices using spray processor tools
摘要翻译：本发明提供用于在使用喷雾处理器工具处理微电子装置的过程中控制第一和第二处理流体之间的转变的方法和装置

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