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1. 发明申请

WO1994029681A1 SIMULTANEOUS DETERMINATION OF LAYER THICKNESS AND SUBSTRATE TEMPERATURE DURING COATING 审中-公开
标题翻译：涂层在同时厘定厚度和基质温度
公开(公告)号：WO1994029681A1
公开(公告)日：1994-12-22
申请号：PCT/DE1994000168
申请日：1994-02-16
申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
发明人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. , BÖBEL, Friedrich , BAUER, Norbert
IPC分类号： G01J05/00
CPC分类号： G01B11/0633 , G01J5/60
摘要： The invention describes a process and device for measuring temperature and layer thickness during coating by prior art methods in semiconductor manufacturing, plasma, ion and other dry-etching plants and in the production of optical coatings. The current results of layer thickness and temperature measurements may be used in process control. The interference phenomena in thermal substrate radiation on the growing layer continuously cause the emissivity epsilon to change during coating, thus preventing the use of pyrometric temperature measurement, which gives rise to particular problems in multi-layer systems in which the current emissivity depends on the thickness of all the layer, their optical constants, the temperature-dependence of the optical constant and the observation angle and wavelength. The present invention solves these fundamental problems by determining the reflectivity R of the wafer using a reflectometer. According to the law of the conservation of energy, for non-transparent substrates epsilon = 1 - R, and hence the current emissivity of the entire (multi-layer) system can be directly determined with the reflectometer. The temperature is measured by means of a given evaluation rule, while the thickness is found by comparing the reflectometer curve with the theoretical layer thickness dependence.
摘要翻译：本发明描述了在与半导体制造设备，等离子体，离子等干式蚀刻，并在生产光学层的公知的涂布技术涂覆工艺用于温度测量和层厚的方法和装置。层厚度和温度测量的当前测量值可以用于工艺控制。为一体的热衬底辐射到生长层的干扰现象的结果，连续地涂布，因此不能被应用于一个测温温度测量期间EPSILON发射率的变化。特别成问题的是多层系统的测温温度测量，当前发射率是依赖于它的光学常数中，光学常数的温度依赖关系，观察角度和观测波长的所有层的厚度。这个基本问题将通过本发明的晶片的反射率R用反射计测定所要解决。由于能量守恒定律是有效的用于非透明基板的ε-= 1 - R，使得总（多层）系统的实际发射率与反射计直接确定。温度测量然后通过确定的评估规则进行的，而厚度是由Reflektometerkurve与理论膜厚依赖性进行比较来确定。

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