会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • METHOD FOR MANUFACTURING MAGNETIC FIELD DETECTION DEVICES AND DEVICES THREFROM
    • 用于制造磁场检测装置的方法和装置
    • WO2005013385A3
    • 2005-06-02
    • PCT/IB2004002543
    • 2004-07-30
    • FIAT RICERCHEPULLINI DANIELEMARTORANA BRUNETTOPERLO PIERO
    • PULLINI DANIELEMARTORANA BRUNETTOPERLO PIERO
    • G01R33/06H01F10/32H01F41/30H01L43/10H01L43/12G01R33/09H01L43/08
    • B82Y25/00B82Y40/00G01R33/06H01F10/3227H01F10/3254H01F10/3268H01F41/301H01F41/306H01F41/307H01L43/10H01L43/12
    • A method for manufacturing magnetic field detection devices is described, said method comprising the operations of manufacturing a magneto-resistive. element (10, 20) comprising regions with metallic conduction (13, 23) and regions with semi-conductive conduction (11, 31). Said method comprises the following operations: - forming metallic nano-particles (37) to obtain said regions with metallic conduction (13, 23); - providing a semiconductor substrate (31); - applying said metallic nano-particles (37) to said semiconductor substrate (31) to obtain a disordered mesoscopic structure. A magnetic device is also described, comprising a spin valve, said spin valve (110) comprising a plurality of layers (111, 112, 113, 114, 115, 116, 117) arranged in a stack which in turn comprises at least one free magnetic layer (111) able to be associated to a temporary magnetisation (MT), a spacer layer (133) and a permanent magnetic layer (112) associated to a permanent magnetisation (MP). The spacer element (133) is obtained by means of a mesoscopic structure of nanoparticles in a metallic matrix produced in accordance with the method for manufacturing magnetoresistive elements of the invention.
    • 描述了用于制造磁场检测装置的方法,所述方法包括制造磁阻的操作。 元件(10,20)包括具有金属导电的区域(13,23)和具有半导电传导的区域(11,31)。 所述方法包括以下操作: - 形成金属纳米颗粒(37)以获得具有金属传导的所述区域(13,23); - 提供半导体衬底(31); - 将所述金属纳米颗粒(37)施加到所述半导体衬底(31)以获得无序的介观结构。 还描述了一种磁性装置,其包括自旋阀,所述自旋阀(110)包括布置成堆叠的多个层(111,112,113,114,115,116,117),所述层又包括至少一个自由 能够与临时磁化(MT)相关联的磁性层(111),与永久磁化(MP)相关联的间隔层(133)和永久磁性层(112)。 间隔元件(133)通过根据本发明的磁阻元件的制造方法制造的金属基体中的纳米粒子的介观结构获得。
    • 4. 发明申请
    • MAGNETIC TRANSDUCTION SENSOR DEVICE, MANUFACTURING PROCESS AND DETECTION PROCESS THEREFORM
    • 磁感应传感器装置,制造工艺及其检测过程
    • WO2005033644A2
    • 2005-04-14
    • PCT/IB2004003173
    • 2004-09-29
    • FIAT RICERCHEPULLINI DANIELEPERLO PIERO
    • PULLINI DANIELEPERLO PIERO
    • B60C23/04G01K13/08G01L1/12G01L9/00G01L9/16G01P15/105G01L1/00
    • B60C23/0408G01P15/105
    • Magnetic pressure sensor device, of the type comprising at least one magnetic layer (11) able to vary a magnetisation associated thereto in response to a pressure (P) exerted thereon. Said device (20; 30; 40; 50) comprises a plurality of layers (11, 12, 13, 14, 15, 16, 17) arranged in a stack, said magnetic layer (11) able to vary a magnetisation associated thereto in response to a pressure (P) comprising a free magnetic layer (11), able to be associated to a temporary magnetisation (MT), said free magnetic layer (11) belonging to said plurality of layers (11, 12, 13, 14, 15, 16, 17), which further comprises at least a spacer layer (13; 23; 33) and a permanent magnetic layer (12) associated to a permanent magnetisation (MP). Said sensor device (20) further comprises a compressible layer (21; 31; 42) and a layer with high magnetic coercivity (22; 32; 42) associated to said plurality of layers (11, 12, 13, 14, 15, 16, 17).
    • 该磁压力传感器装置包括至少一个能够响应于施加在其上的压力(P)而改变与其相关联的磁化的磁性层的磁性层。 所述装置(20; 30; 40; 50)包括布置在堆叠中的多个层(11,12,13,14,15,16,17),所述磁性层(11)能够改变与其相关联的磁化 响应于包括能够与临时磁化(MT)相关联的自由磁性层(11)的压力(P),属于所述多个层(11,12,13,14,14)的所述自由磁性层(11) 15,16,17),其还包括至少间隔层(13; 23; 33)和与永久磁化(MP)相关联的永久磁性层(12)。 所述传感器装置(20)还包括可压缩层(21; 31; 42)和与所述多个层(11,12,13,14,15,16)相关联的具有高磁矫顽力(22; 32; 42) ,17)。