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    • 4. 发明申请
    • METHOD FOR PRODUCING INSULATION STRUCTURES
    • 制造绝缘结构的方法
    • WO2004026759A3
    • 2004-12-23
    • PCT/DE0303049
    • 2003-09-12
    • CONTI TEMIC MICROELECTRONICAIKELE MATTHIASENGELHARDT ALBERTFREY MARCUSHARTMANN BERNHARDSEIDEL HELMUT
    • AIKELE MATTHIASENGELHARDT ALBERTFREY MARCUSHARTMANN BERNHARDSEIDEL HELMUT
    • B81C1/00
    • B81C1/00698B81B2201/0235B81B2203/033B81C2201/0178
    • The invention relates to methods for producing insulation structures for micromechanical sensors according to a monocrystalline surface technique. According to known methods, silicon structures defined by deep trenches are etched and the lower side thereof facing the substrate is exposed by a release etch step. The filling of said trenches with a dielectrically insulating material, such as silicon dioxide, enables the silicon structure to be solidly clutched on three sides. The invention is based on the fact that instead of filling trenches, thin-walled silicon is converted into an electrically non-conductive material. This can be carried out, for example, by means of thermal oxidation of narrow silicon sections previously exposed by trenches. In a minimal configuration, two trenches (holes) must be etched per section with the desired structural depth. The interlying silicon section must be narrow enough to be able to be fully thermally oxidised.
    • 本发明涉及用于制造单晶表面技术中的微机械传感器的绝缘结构的方法。 在已知的方法中,由深沟槽沟槽限定的硅结构通过释放 - 蚀刻步骤被蚀刻并且在其底侧上暴露于衬底。 随后,用诸如二氧化硅的介电绝缘材料填充这些沟槽,导致通过三面单侧开口Umklammerung牢固地锚固具有填充沟槽的硅结构。 本发明的基本思想是将薄壁硅转变成不导电材料而不是填入沟槽中。 这可以例如通过先前由沟槽暴露的窄硅网的热氧化来实现。 在最小配置中,每个条纹的两个沟槽(孔)必须用所需的纹理深度进行蚀刻。 插入的硅棒必须足够窄,才能被热完全氧化。