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1. 发明申请

WO2019104325A1 RF POWER AMPLIFIER WITH COMBINED BASEBAND, FUNDAMENTAL AND HARMONIC TUNING NETWORK 审中-公开
公开(公告)号：WO2019104325A1
公开(公告)日：2019-05-31
申请号：PCT/US2018/062612
申请日：2018-11-27
申请人： CREE, INC.
发明人： ARIGONG, Bayaner , JANG, Haedong , WILSON, Richard , TRANG, Frank , MU, Qianli , HASHIMOTO, Ej
IPC分类号： H03F1/56 , H03F3/195 , H04B1/04 , H03H7/38 , H03F1/02
CPC分类号： H03H7/40 , H01L2223/6655 , H03F1/0205 , H03F1/0222 , H03F1/565 , H03F3/193 , H03F3/195 , H03F3/245 , H03F2200/387 , H03F2200/391 , H03F2200/451 , H03H7/38 , H03H11/30 , H03H2007/013 , H04B1/0458
摘要： An impedance matching network (116) for a radio frequency (RF) amplifier device (108) includes a baseband termination circuit (122) having reactive components configured to present low impedance to signals in a baseband frequency range that is below a fundamental frequency range associated with the RF amplifier device (108). The network (116) also includes a fundamental frequency matching circuit (124) having reactive components configured to substantially match an output impedance of the RF amplifier device (108) in the fundamental frequency range to a predetermined value. The network (116) also includes a second-order harmonic termination circuit (126) having reactive components configured to present low impedance at second order harmonics of RF signals having a fundamental frequency in the fundamental frequency range. Other embodiments include amplifier circuits comprising the network (116) and an RF amplifier device (108), as well as packaged RF amplifiers that include a metal flange (202), an RF transistor (214), and an integrated passive device (216) comprising the network (116).

2. 发明申请

WO2020117652A1 PACKAGED TRANSISTOR DEVICES WITH INPUT-OUTPUT ISOLATION AND METHODS OF FORMING PACKAGED TRANSISTOR DEVICES WITH INPUT-OUTPUT ISOLATION 审中-公开
公开(公告)号：WO2020117652A1
公开(公告)日：2020-06-11
申请号：PCT/US2019/063961
申请日：2019-12-02
申请人： CREE, INC.
发明人： TRANG, Frank , JANG, Haedong , MOKHTI, Zulhazmi
IPC分类号： H01L23/66 , H01L23/64 , H01L23/552
摘要： Packaged transistor devices are provided that include a transistor on a base of the packaged transistor device, the transistor comprising a control terminal and an output terminal, a first bond wire electrically coupled between an input lead and the control terminal of the transistor, a second bond wire electrically coupled between an output lead and the output terminal of the transistor, and an isolation material that is physically between the first bond wire and the second bond wire, wherein the isolation material is configured to reduce a coupling between the first bond wire and the second bond wire.

3. 发明申请

WO2020018761A2 RADIO FREQUENCY TRANSISTOR AMPLIFIERS AND OTHER MULTI-CELL TRANSISTORS HAVING ISOLATION STRUCTURES 审中-公开
公开(公告)号：WO2020018761A2
公开(公告)日：2020-01-23
申请号：PCT/US2019/042359
申请日：2019-07-18
申请人： CREE, INC.
发明人： TRANG, Frank , MU, Qianli , JANG, Haedong , MOKHTI, Zulhazmi
IPC分类号： H01L23/482 , H01L23/00 , H01L29/06 , H01L23/522
摘要： A multi-cell transistor includes a semiconductor structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.

4. 发明申请

WO2020197852A1 IN-TRANSISTOR LOAD MODULATION 审中-公开
公开(公告)号：WO2020197852A1
公开(公告)日：2020-10-01
申请号：PCT/US2020/023128
申请日：2020-03-17
申请人： CREE, INC.
发明人： MOKHTI, Zulhazmi A. , TRANG, Frank , JANG, Haedong
IPC分类号： H03F1/02 , H03F3/193 , H03F3/21 , H01L23/66
摘要： A power amplifier includes a semiconductor die having a main amplifier and a peaking amplifier. The main amplifier includes at least one first transistor, and the peaking amplifier includes at least one second transistor that is different than the first transistor. The peaking amplifier is configured to modulate a load impedance of the main amplifier responsive to a common gate bias applied to respective gates of the first and second transistors. Related fabrication and methods of operation are also discussed.

5. 发明申请

WO2019147666A1 RF POWER AMPLIFIER WITH FREQUENCY SELECTIVE IMPEDANCE MATCHING NETWORK 审中-公开
公开(公告)号：WO2019147666A1
公开(公告)日：2019-08-01
申请号：PCT/US2019/014744
申请日：2019-01-23
申请人： CREE, INC.
发明人： JANG, Haedong , CANNING, Timothy , HERRMANN, Bjoern , MOKHTI, Zulhazmi , TRANG, Frank , WILSON, Richard
IPC分类号： H03F1/02 , H03F1/56 , H03F3/189 , H03F3/193
摘要： An amplifier circuit (400) includes an input port (202), an output port (204), and a reference potential port (214), an RF amplifier device (206) having an input terminal (208) electrically coupled to the input port (202), an output terminal (210) electrically coupled to the output port (204), and a reference potential terminal (212) electrically coupled to the reference potential port (214). An impedance matching network (416) is electrically connected to the output terminal (210), the reference potential port (214), and the output port (204). The impedance matching network (416) includes a reactive efficiency optimization circuit (222) that forms a parallel resonant circuit at a center frequency of the fundamental frequency range. The impedance matching network (416) includes a reactive frequency selective circuit (240) that substantially negates a phase shift of the RF signal in phase at the center frequency and exhibits a linear transfer characteristic in a baseband frequency range.

6. 发明申请

WO2019060535A1 BROADBAND HARMONIC MATCHING NETWORK 审中-公开
公开(公告)号：WO2019060535A1
公开(公告)日：2019-03-28
申请号：PCT/US2018/051936
申请日：2018-09-20
申请人： CREE, INC.
发明人： WILSON, Richard , JANG, Haedong , CANNING, Timothy
IPC分类号： H03F1/56 , H03F3/24 , H03F3/195
摘要： Exemplary impedance matching circuit for an amplifier device comprises a broadband impedance transformer configured to transform, over a fundamental frequency range, an impedance associated with an input port or an output port of the impedance matching circuit; and to transmit RF signals having a fundamental frequency within the fundamental frequency range. The impedance matching circuit also includes a phase shifter circuit configured to phase-shift higher-order harmonics of the RF signals having a fundamental frequency within the fundamental frequency range; and to transmit, with substantially matched impedance, the RF signals having a fundamental frequency within the fundamental frequency range. The impedance matching circuit also includes a high-pass impedance transformer configured to match an impedance of the RF signals having a fundamental frequency within the fundamental frequency range; and to transmit, with low reflection, second-order harmonics of the RF signals having a fundamental frequency within the fundamental frequency range. embodiments also include amplifier circuits comprising an RF amplifier and embodiments of the impedance matching circuit.

7. 发明申请

WO2020191137A1 ASYMMETRIC DOHERTY AMPLIFIER CIRCUIT WITH SHUNT REACTANCES 审中-公开
公开(公告)号：WO2020191137A1
公开(公告)日：2020-09-24
申请号：PCT/US2020/023526
申请日：2020-03-19
申请人： CREE, INC.
发明人： JANG, Haedong , ARISTUD, Sonoko , MARBELL, Marvin , CHIDURALA, Madhu
IPC分类号： H03F1/02 , H03F3/195 , H03F3/24 , H03F1/56
摘要： In an asymmetric Doherty amplifier circuit (36), one or more shunt reactive components are added to at least one side of an impedance inverter (38) connecting the amplifier outputs, to reduce a capacitance imbalance between the two amplifiers (14a, 14b) caused by their different parasitic capacitances (C DS1 , C DS2 ). This enables the (adjusted) parasitic capacitances to be incorporated into a quarter-wavelength transmission line, having a 90-degree phase shift, for the impedance inverter (38). In one embodiment, a shunt inductance (L SH ) is connected between the impedance inverter, on the side of the larger amplifier (14b), and RF signal ground. The inductance (L SH1 ) is sized to resonate away substantially the excess parasitic capacitance of the larger amplifier (14b). In another embodiment, a shunt capacitor (C SH ) is connected on the side of the smaller amplifier (14a), thus raising its total capacitance to substantially equal the parasitic capacitance of the larger amplifier (14b). In other embodiments shunt inductances (LSH, LSH1, LSH2) and/or capacitors (C SH , C SH1 , C SH2 ) may be added to one or both amplifiers (14a, 14b), and sized to effectively control a characteristic impedance of the impedance inverter (38).

8. 发明申请

WO2020102641A1 BROADBAND IMPEDANCE MATCHING NETWORK USING LOW-PASS TYPE BROADBAND MATCHING, SECOND HARMONIC REFLECTION PHASE SHIFTING AND HIGH PASS COMPLEX CONJUGATE MATCHING IN COMBINATION 审中-公开
公开(公告)号：WO2020102641A1
公开(公告)日：2020-05-22
申请号：PCT/US2019/061645
申请日：2019-11-15
申请人： CREE, INC.
发明人： JANG, Haedong , WILSON, Richard , HERRMANN, Björn , MOKHTI, Zulhazmi
IPC分类号： H03H7/38 , H03F1/56
摘要： The operative bandwidth of a broadband RF amplifier (M1) is improved by using a low-pass type broadband impedance transformer (LPMN), instead of a broadband matching network, in a multi-stage impedance matching network connected, e.g., to the amplifier input, the output, or both. The multi-stage impedance matching network comprises three stages connected in series. The first stage is a low- pass type broadband impedance transformer (LPMN, LPMN 1 ) that provides broadband low reflection fundamental impedances and high reflection for the second harmonics. The second stage is a phase shifter that controls the location of the second harmonic reflection coefficient phases. The third stage is a high-pass input matching circuit (MN, ΜΝ 1 ) that transforms the complex conjugate device input impedance to a real impedance. The three-stage impedance matching network provides the fundamental and harmonic frequency impedances for broadband operations, as well as controllability of the second harmonic reflection coefficient phases where the device performances are consistent across the intended bandwidth..

9. 发明申请

WO2020018761A3 RADIO FREQUENCY TRANSISTOR AMPLIFIERS AND OTHER MULTI-CELL TRANSISTORS HAVING ISOLATION STRUCTURES 审中-公开
公开(公告)号：WO2020018761A3
公开(公告)日：2020-01-23
申请号：PCT/US2019/042359
申请日：2019-07-18
申请人： CREE, INC.
发明人： TRANG, Frank , MU, Qianli , JANG, Haedong , MOKHTI, Zulhazmi
IPC分类号： H01L23/482 , H01L23/00 , H01L29/06 , H01L23/522
摘要： A multi-cell transistor (100) includes a semiconductor structure (110), a plurality of unit cell transistors (170) that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.

10. 发明申请

WO2020014199A1 IMPROVED DRAIN AND/OR GATE INTERCONNECT AND FINGER STRUCTURE 审中-公开
公开(公告)号：WO2020014199A1
公开(公告)日：2020-01-16
申请号：PCT/US2019/040960
申请日：2019-07-09
申请人： CREE, INC.
发明人： MOKHTI, Zulhazmi , TRANG, Frank , JANG, Haedong
IPC分类号： H01L23/482 , H01L29/78 , H01L29/06 , H01L29/417 , H01L29/778
摘要： Pursuant to some embodiments of the present invention, transistor devices are provided that include a semiconductor structure, a gate finger extending on the semiconductor structure in a first direction, and a gate interconnect extending in the first direction and configured to be coupled to a gate signal at an interior position of the gate interconnect, where the gate interconnect is connected to the gate finger at a position offset from the interior position of the gate interconnect.

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