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1. 发明申请

WO2009120353A3 SEMICONDUCTOR BURIED GRATING FABRICATION METHOD 审中-公开
标题翻译： SEMICONDUCTOR BURIED GRATING FABRICATION方法
公开(公告)号：WO2009120353A3
公开(公告)日：2009-12-30
申请号：PCT/US2009001889
申请日：2009-03-27
申请人： CORNING INC , LI YABO , SONG KECHANG , VISOVSKY NICHOLAS J , ZAH CHUNG-EN
发明人： LI YABO , SONG KECHANG , VISOVSKY NICHOLAS J , ZAH CHUNG-EN
IPC分类号： H01L21/00
CPC分类号： G03F7/0005 , G02B6/124 , G02B6/136 , H01S5/12
摘要： Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure.
摘要翻译：在半导体激光器结构中形成光栅轮廓的方法包括以下步骤：提供包括晶片衬底的半导体晶片，设置在晶片衬底上的蚀刻停止层，设置在蚀刻停止层上方的光栅层，设置在光栅上的蚀刻掩模层层和设置在蚀刻掩模层上的光致抗蚀剂层，形成光致抗蚀剂光栅图案，通过干蚀刻将光致抗蚀剂光栅图案转移到光栅层中，以及去除光致抗蚀剂层，选择性地湿蚀刻光栅层以形成光栅轮廓光栅层。在蚀刻掩模和蚀刻停止层之间放置光栅层控制选择性湿蚀刻步骤。该方法还包括通过选择性湿蚀刻去除蚀刻掩模层而不改变光栅轮廓，并且重新生长上覆层以产生半导体激光器结构。

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