专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011020319A8 FUSION PROTEIN REGULATING PLASMA GLUCOSE AND LIPID, ITS PREPARATION METHOD AND USE 审中-公开
标题翻译：融合蛋白调节等离子体葡萄糖和脂质，其制备方法和用途
公开(公告)号：WO2011020319A8
公开(公告)日：2012-03-15
申请号：PCT/CN2010071026
申请日：2010-03-12
申请人： CHONGQING FAGEN BIOMEDICAL INC , FAN KAI , ZHAO ZHIQUAN , ZHANG CHUN , CHEN YONG , LUO HUA , YANG LI , LIU HONGHONG
发明人： FAN KAI , ZHAO ZHIQUAN , ZHANG CHUN , CHEN YONG , LUO HUA , YANG LI , LIU HONGHONG
IPC分类号： C12N15/06 , A61K38/26 , A61P3/04 , A61P3/06 , A61P3/10 , C07K14/50 , C07K14/605 , C12N15/63
CPC分类号： C07K14/43 , A61K38/00 , C07K14/50 , C07K14/605 , C07K2319/00
摘要： Provided is a fusion protein, which comprises human fibroblast growth factor 21 and glucagon-like-peptide-1 or its analogs. Also provided is the medicament composition comprising the fusion protein, which can be used for treating or preventing obesity, diabetes, hyperglycemia and hyperlipidemia etc.
摘要翻译：提供了一种融合蛋白，其包含人成纤维细胞生长因子21和胰高血糖素样肽-1或其类似物。还提供了包含融合蛋白的药物组合物，其可用于治疗或预防肥胖症，糖尿病，高血糖症和高脂血症等。

2. 发明申请

WO2008116994A3 ARTICLE HAVING A NANOTEXTURED SURFACE WITH SUPERHYDROPHOBIC PROPERTIES 审中-公开
标题翻译：具有超级性能的纳米表面的物品
公开(公告)号：WO2008116994A3
公开(公告)日：2008-11-27
申请号：PCT/FR2008050350
申请日：2008-02-29
申请人： ESSILOR INT , CENTRE NAT RECH SCIENT , REYSSAT MATHILDE , CHEN YONG , PEPIN ANNE , QUERE DAVID , BIVER CLAUDINE , VAGHARCHAKIAN LAURIANNE
发明人： REYSSAT MATHILDE , CHEN YONG , PEPIN ANNE , QUERE DAVID , BIVER CLAUDINE , VAGHARCHAKIAN LAURIANNE
IPC分类号： B08B17/06 , G02B1/10
CPC分类号： B08B17/06 , B08B17/065 , G02B1/118 , G02B27/0006 , Y10T428/24355 , Y10T428/31
摘要： The invention relates to an article having a nanotextured surface with superhydrophobic properties, comprising a network of preferably regular vertical tabs, characterised in that the tab network fulfils the following conditions: the surface fraction of the tabs Øs is such that 3% = Øs = 13%, preferably 5% = Øs = 12%, preferably 5% = Øs = 13%, even better 5.5% = Øs = 13%, even better 6% = Øs = 13%, and better still 8% = Øs = 13%; the pitch p of the network is such that 100nm = p = 250 nm; the height h of the tabs is such that 100nm = h = 400 nm, preferably 250 = h = 400 nm, even better 300 = h = 400 nm; and the lateral surface of the tabs is inclined at most by an angle of ± 20°, preferably ± 10° or even better ± 5°, in relation to the vertical axis of the tabs.
摘要翻译：本发明涉及具有超疏水性质的纳米纹理表面的制品，其包括优选规则的垂直突片的网络，其特征在于，所述突片网络满足以下条件：所述突出部分的表面部分使得3％=Øs= 13 ％，优选5％=Øs= 12％，优选5％=Øs= 13％，甚至更好5.5％=Øs= 13％，甚至更好6％=Øs= 13％，更好仍为8％=Øs= 13％ ; 网络的节距p使得100nm = p = 250nm; 片的高度h使得100nm = h = 400nm，优选250 = h = 400nm，甚至更好300 = h = 400nm; 并且翼片的侧表面相对于翼片的垂直轴线最多倾斜±20°，优选±10°或甚至更好±5°的角度。

3. 发明申请

WO2006083310A3 NANOWIRE DEVICE WITH (111) VERTICAL SIDEWALLS AND METHOD OF FABRICATION 审中-公开
标题翻译：具有（111）垂直边的纳米器件和制造方法
公开(公告)号：WO2006083310A3
公开(公告)日：2006-10-05
申请号：PCT/US2005022699
申请日：2005-06-28
申请人： HEWLETT PACKARD DEVELOPMENT CO , ISLAM SAIFUL M , CHEN YONG , WANG SHIH-YUAN
发明人： ISLAM SAIFUL M , CHEN YONG , WANG SHIH-YUAN
IPC分类号： B81B7/00
CPC分类号： H01L27/1203 , B82Y10/00 , G11C2213/81 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/861
摘要： A nano-scale device 10, 20, 30, 60 and method 40, 50, 70 of fabrication provide a nanowire 14, 24, 34, 64 having (111) vertical sidewalls 14a, 22e, 34a, 64a. The nano-scale device includes a semiconductor-on-insulator substrate 12, 22, 32, 62 polished in a [110] direction, the nanowire, and an electrical contact 26, 35 at opposite ends of the nanowire 24, 34. The method 40, 50, 70 includes wet etching 42, 52, 72 a semiconductor layer 12a, 22a, 32a. 62a of the semiconductor-on-insulator substrate to form 44, 54 the nanowire 24, 34 extending between a pair of islands 22f, 32f in the semiconductor layer 22a, 32a. The method 50 further includes depositing 56 an electrically conductive material on the pair of islands to form the electrical contacts 26, 36. A nano-pn diode 60 includes the nanowire 64 as a first nano-electrode, a pn-junction 66 verically stacked on the nanowire 64, and a second nano-electrode 68 on a (110) horizontal planar end of the pn-junction. The nano-pn diode 60 may be fabricated in array of the diodes on the semiconductor-on-insulator substrate 62.
摘要翻译：具有（111）垂直侧壁14a，22e，34a，64a的纳米级器件10,20,30,60和制造方法40,50,70制成纳米线14,24,34,64。纳米级器件包括在[110]方向上抛光的绝缘体上半导体衬底12,22,32,62，纳米线和在纳米线24,34的相对端的电接触26,35。 40,50,70包括湿蚀刻42,52,72半导体层12a，22a，32a。 62a，以形成44,54在半导体层22a，32a中的一对岛状物22f，32f之间延伸的纳米线24,34。方法50还包括在该对岛上沉积56导电材料以形成电接触26,36。纳米pn二极管60包括作为第一纳米电极的纳米线64，纳米线64和在pn结的（110）水平平面端上的第二纳米电极68。可以在绝缘体上半导体衬底62上的二极管的阵列中制造纳米pn二极管60。

4. 发明申请

WO2007076236A3 METHOD FOR CORRECTING A MOBILE SUBSCRIBER IDENTIFICATION 审中-公开
标题翻译：用于校正移动订户标识的方法
公开(公告)号：WO2007076236A3
公开(公告)日：2007-12-27
申请号：PCT/US2006061841
申请日：2006-12-11
申请人： MOTOROLA INC , CHEN YONG , CHEN JING , WEI CHONG-SHENG
发明人： CHEN YONG , CHEN JING , WEI CHONG-SHENG
IPC分类号： G06F21/00 , G07F7/08 , H04L29/06 , H04W8/20
CPC分类号： H04W8/20
摘要： A method for correcting a mobile subscriber identification is useful for improving Quality of Service (QoS). The method comprises receiving from a mobile device at a Device Management (DM) server a device management message including a first subscriber identification that identifies the mobile device (step 510). The first subscriber identification is then compared with a second subscriber identification, which second subscriber identification is stored in a memory associated with the DM server (step 515). The DM server then transmits to the mobile device a status code indicating a mismatch between the first and second subscriber identifications (step 520).
摘要翻译：用于校正移动用户标识的方法对于提高服务质量（QoS）是有用的。该方法包括在设备管理（DM）服务器处从移动设备接收包括识别移动设备的第一用户标识的设备管理消息（步骤510）。然后将第一用户标识与第二用户标识进行比较，第二用户识别被存储在与DM服务器相关联的存储器中（步骤515）。然后，DM服务器向移动设备发送指示第一和第二用户标识之间的不匹配的状态码（步骤520）。

5. 发明申请

WO2006009626A3 IMPRINTING LITHOGRAPHY USING THE LIQUID/SOLID TRANSITION OF METALS AND THEIR ALLOYS 审中-公开
标题翻译：使用金属及其合金的液体/固体过渡进行压印
公开(公告)号：WO2006009626A3
公开(公告)日：2006-03-09
申请号：PCT/US2005020351
申请日：2005-06-08
申请人： HEWLETT PACKARD DEVELOPMENT CO , CHEN YONG
发明人： CHEN YONG
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method is provided for imprinting a pattern (18a) having nanoscale features from a mold (10) into the patternable layer (18) on a substrate (14). The method comprises: providing the mold (10); forming the patternable layer (18) on the substrate (14); and imprinting the mold (10) into the patternable layer (18), wherein the patternable layer (18) comprises a metal or alloy having a transition temperature from its solid form to its liquid form that is within a range of at least 10° above room temperature.
摘要翻译：提供了一种用于将具有纳米尺度特征的图案（18a）从模具（10）压印到基底（14）上的图案化层（18）中的方法。该方法包括：提供模具（10）; 在所述基板（14）上形成所述可图案层（18）; 以及将所述模具（10）压印到所述图案化层（18）中，其中所述可图案层（18）包括具有从其固体形式到其液体形式的转变温度的金属或合金，所述液体形式在至少10°以上的范围内室内温度。

6. 发明申请

WO2005070167A8 NANOSCALE ELECTRIC LITHOGRAPHY 审中-公开
公开(公告)号：WO2005070167A8
公开(公告)日：2006-12-07
申请号：PCT/US2005000901
申请日：2005-01-12
申请人： UNIV CALIFORNIA , CHEN YONG
发明人： CHEN YONG
IPC分类号： G03F7/00
CPC分类号： B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , G03G13/28 , G03G13/283 , G03G13/286
摘要： A nanoscale lithographic method in which a reusable conductive mask, having a pattern of conductive surfaces and insulating surfaces, is positioned upon a substrate whose surface contains an electrically responsive resist layer over a buried conductive layer. When an electric field is applied between the conductive mask and buried conductive layer, the resist layer is altered in portions adjacent the conductive areas of the mask. Selective processing is performed on the surface of the substrate, alter mask removal, to remove portions of the resist layer according to the pattern transferred from the mask. The substrate may be a target substrate, or the substrate may be utilized for a lithographic masking step of another substrate. In one aspect of the invention the electrodes to which the charge is applied are divided, such as into a plurality of rows and columns wherein any desired pattern may be created without the need to fabricate specific masks.
摘要翻译：一种纳米级光刻方法，其中具有导电表面和绝缘表面图案的可重复使用的导电掩模位于其表面在掩埋导电层上包含电响应抗蚀剂层的基底上。当在导电掩模和掩埋导电层之间施加电场时，抗蚀剂层在与掩模的导电区域相邻的部分中改变。在基板的表面上进行选择性处理，改变掩模去除，以根据从掩模转印的图案去除抗蚀剂层的部分。衬底可以是目标衬底，或者衬底可以用于另一衬底的光刻掩模步骤。在本发明的一个方面，施加电荷的电极被分割成多个行和列，其中可以创建任何期望的图案，而不需要制造特定的掩模。

7. 发明申请

WO03106481A8 A PROCESS OF PRODUCING ALA-GLN DIPEPTIDE 审中-公开
标题翻译：生产ALA-GLN药剂的方法
公开(公告)号：WO03106481A8
公开(公告)日：2004-06-24
申请号：PCT/CN0300417
申请日：2003-05-30
申请人： UNIV XIAMEN , ZHAO YUFEN , TANG GUO , ZHOU NING , HU LIMING , CHEN YONG
发明人： ZHAO YUFEN , TANG GUO , ZHOU NING , HU LIMING , CHEN YONG
IPC分类号： C07K5/062 , A61K38/04 , C07K1/06 , C07K5/04 , C07K5/06
CPC分类号： C07K5/06026 , Y02P20/55
摘要： The present invention relates to a process of producing Ala-Gln dipeptide, comprising of: the amino acid protected at N-end reacts with triphenyl phosphine and hexachloroethane in an organic solvent, forming an active ester; the active ester reacts with glutamine in an organic solvent and an aqueous inorganic base solution, acidizing the result reaction mixture with an inorganic acid, deprotected the protection group at N-end. The raw materials are inexpensive. The synthesis process is not difficult. It is not necessary to separate the intermediate, or to purify it. It is easy to separate and purify the product. The reagents used in the process are less toxicity so that it is suit for environment.
摘要翻译：本发明涉及一种产生Ala-Gln二肽的方法，包括：N-端保护的氨基酸在有机溶剂中与三苯基膦和六氯乙烷反应，形成活性酯; 活性酯与有机溶剂中的谷氨酰胺和无机碱水溶液反应，用无机酸酸化结果反应混合物，使保护基在N末端脱保护。原料价格便宜。合成过程并不困难。没有必要分离中间体或净化它。容易分离和净化产品。该方法中使用的试剂毒性较小，适合环境使用。

8. 发明申请

WO2007094886A3 ONE POT SYNTHESIS OF TETRAZOLE DERIVATIVES OF SIROLIMUS 审中-公开
标题翻译：一锅法合成四螺旋四唑衍生物
公开(公告)号：WO2007094886A3
公开(公告)日：2007-11-29
申请号：PCT/US2006061909
申请日：2006-12-12
申请人： ABBOTT LAB , DHAON MADHUP , HSIAO CHU-NUNG , PATEL SUBHASH , BONK PETER , CHEMBURKAR SANJAY , CHEN YONG
发明人： DHAON MADHUP , HSIAO CHU-NUNG , PATEL SUBHASH , BONK PETER , CHEMBURKAR SANJAY , CHEN YONG
IPC分类号： C07D498/18 , A61K31/395
CPC分类号： C07D498/18
摘要： A single-step, one-pot process to obtain zotarolimus and other rapamycin derivatives on large scale that improves currently available syntheses. In one embodiment, dried rapamycin is dissolved in isopropylacetate . After cooling and 2,6-Lutidine addition, triflic anhydride is slowly added at -30° C. Salts are removed by filtration. Tetrazole, followed by a tert-base diisopropylethylamine is added. After incubation at room temperature, the product is concentrated and purified by a silica gel column using THF/heptane as eluant. The product is collected, concentrated, and purified using an acetone/heptane column. The product-containing fractions are concentrated. The product is dissolved in t-BME and precipitated with heptane. The solids are dissolved in acetone, treated with butylated-hydroxy toluene, and the solution concentrated. The process is repeated twice with acetone to remove solvents. At least one stabilizing agent is added, such as BHT at 0.5% before drying.
摘要翻译：大规模获得zotarolimus和其他雷帕霉素衍生物的单步一锅法工艺，改进了目前可用的合成方法。在一个实施方案中，将干燥的雷帕霉素溶解在乙酸异丙酯中。冷却并加入2,6-二甲基吡啶后，在-30℃缓慢加入三氟甲磺酸酐。过滤除去盐。加入四唑，然后加入叔丁基二异丙基乙胺。在室温下温育后，将产物浓缩并通过硅胶柱使用THF /庚烷作为洗脱液进行纯化。收集产物，浓缩并使用丙酮/庚烷柱纯化。含产物的级分被浓缩。将产物溶解在t-BME中并用庚烷沉淀。将固体溶于丙酮中，用丁基化羟基甲苯处理，浓缩溶液。该过程用丙酮重复两次以除去溶剂。在干燥前加入至少一种稳定剂，例如0.5％的BHT。

9. 发明申请

WO2005070167A3 NANOSCALE ELECTRIC LITHOGRAPHY 审中-公开
公开(公告)号：WO2005070167A3
公开(公告)日：2007-05-31
申请号：PCT/US2005000901
申请日：2005-01-12
申请人： UNIV CALIFORNIA , CHEN YONG
发明人： CHEN YONG
IPC分类号： B41D7/00 , B05D1/00 , B05D3/00 , B41C1/06 , B41F9/00 , B41F33/00 , G03F7/00 , H01T14/00 , H05C1/04 , H05H1/48
CPC分类号： B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , G03G13/28 , G03G13/283 , G03G13/286
摘要： A nanoscale lithographic method in which a reusable conductive mask, having a pattern of conductive surfaces and insulating surfaces, is positioned upon a substrate whose surface contains an electrically responsive resist layer over a buried conductive layer. When an electric field is applied between the conductive mask and buried conductive layer, the resist layer is altered in portions adjacent the conductive areas of the mask. Selective processing is performed on the surface of the substrate, alter mask removal, to remove portions of the resist layer according to the pattern transferred from the mask. The substrate may be a target substrate, or the substrate may be utilized for a lithographic masking step of another substrate. In one aspect of the invention the electrodes to which the charge is applied are divided, such as into a plurality of rows and columns wherein any desired pattern may be created without the need to fabricate specific masks.
摘要翻译：一种纳米级光刻方法，其中具有导电表面和绝缘表面图案的可重复使用的导电掩模位于其表面在掩埋导电层上包含电响应抗蚀剂层的基底上。当在导电掩模和掩埋导电层之间施加电场时，抗蚀剂层在与掩模的导电区域相邻的部分中改变。在基板的表面上进行选择性处理，改变掩模去除，以根据从掩模转印的图案去除抗蚀剂层的部分。衬底可以是目标衬底，或者衬底可以用于另一衬底的光刻掩模步骤。在本发明的一个方面，施加电荷的电极被分割成多个行和列，其中可以创建任何期望的图案，而不需要制造特定的掩模。

10. 发明申请

WO2005117023A3 A COMPOSITION OF MATTER WHICH RESULTS IN ELECTRONIC SWITCHING THROUGH INTRA- OR INTER- MOLECULAR CHARGE TRANSFER BETWEEN MOLECULES AND ELECTRODES INDUCED BY AN ELECTRICAL FIELD 审中-公开
标题翻译：通过电场诱导的分子和电极之间的内部或内部电荷转移的电子切换结果的结果的组成
公开(公告)号：WO2005117023A3
公开(公告)日：2006-08-03
申请号：PCT/US2005016999
申请日：2005-05-17
申请人： HEWLETT PACKARD DEVELOPMENT CO , CHEN YONG , ZHANG XIAO-AN , BRATKOVSKI ALEXANDRE M , WILLIAMS STANLEY R
发明人： CHEN YONG , ZHANG XIAO-AN , BRATKOVSKI ALEXANDRE M , WILLIAMS STANLEY R
IPC分类号： G11C13/02 , C25C7/02 , G03G9/00 , G11C13/00 , H01L51/00
CPC分类号： G11C13/0019 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/14 , G11C2213/56 , H01L51/0051 , H01L51/0059 , H01L51/0064 , H01L51/0067 , H01L51/0078 , H01L51/0591 , H01L51/0595
摘要： A composition of matter is provided that results in a change of electrical properties through intra-molecular charge transfer or inter-molecular charge transfer or charge transfer between a molecule (12) and an electrode (14, 16; 14', 16'), wherein the charge transfer is induced by an electric field.
摘要翻译：提供了一种物质组合物，其通过在分子（12）和电极（14,16; 14'，16'）之间的分子内电荷转移或分子间电荷转移或电荷转移导致电性质的变化，其中电荷转移由电场引发。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式