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1. 发明申请

WO2008147154A2 ORGANIC PHOTOELECTRIC DEVICE AND MATERIAL USED THEREIN 审中-公开
标题翻译：有机光电器件及其使用的材料
公开(公告)号：WO2008147154A2
公开(公告)日：2008-12-04
申请号：PCT/KR2008/003076
申请日：2008-05-30
申请人： CHEIL INDUSTRIES INC. , JUNG, Ho-Kuk , KANG, Eui-Su , KANG, Myeong-Soon , PARK, Jin-Seong , YU, Eun-sun , HUH, Dal-Ho , CHAE, Mi-Young , KWON, Jang-Hyuk , JANG, Jin , PARK, Tae-Jin , JEON, Woo-Sik
发明人： JUNG, Ho-Kuk , KANG, Eui-Su , KANG, Myeong-Soon , PARK, Jin-Seong , YU, Eun-sun , HUH, Dal-Ho , CHAE, Mi-Young , KWON, Jang-Hyuk , JANG, Jin , PARK, Tae-Jin , JEON, Woo-Sik
IPC分类号： C09K11/06
CPC分类号： C09K11/06 , C07D213/30 , C07D221/08 , C07D221/10 , C07D263/57 , C07D277/24 , C07F7/0836 , C09B57/00 , C09B57/007 , C09B57/10 , C09K2211/1029 , C09K2211/1033 , C09K2211/1037 , C09K2211/1044 , C09K2211/1059 , C09K2211/186 , H01L51/0077 , H01L51/0085 , H01L51/5016 , H01L51/5036 , H01L2251/554 , H05B33/14
摘要： The present invention relates to an organic photoelectric device and a material used therein. The organic photoelectric device includes a substrate, an anode disposed on the substrate, a hole transport layer (HTL) disposed on the anode, an emission layer disposed on the hole transport layer (HTL), and a cathode disposed on the emission layer. The emission layer is characterized in that it includes a host and a phosphorescent dopant, and the host has a difference between the reduction potential or oxidation potential of the host and the reduction potential or oxidation potential of the phosphorescent dopant of less than 0.5eV. The organic photoelectric device according to the present invention is capable of accomplishing higher efficiency and a lower driving voltage than those of the conventional organic photoelectric device, and has a simplified structure resulting in saving of manufacturing cost.
摘要翻译：本发明涉及一种有机光电装置及其中使用的材料。有机光电装置包括基板，设置在基板上的阳极，设置在阳极上的空穴传输层（HTL），设置在空穴传输层（HTL）上的发射层，以及设置在发射层上的阴极。发光层的特征在于其包括主体和磷光掺杂剂，并且主体在主体的还原电位或氧化电位与磷光掺杂剂的还原电位或氧化电位之间具有小于0.5eV的差异。根据本发明的有机光电装置能够实现比传统的有机光电装置更高的效率和更低的驱动电压，并且具有简化的结构，从而节省制造成本。

2. 发明申请

WO2006030994A1 CIRCUIT AND METHOD FOR DRIVING ORGANIC LIGHT EMITTING DIODE 审中-公开
标题翻译：用于驱动有机发光二极管的电路和方法
公开(公告)号：WO2006030994A1
公开(公告)日：2006-03-23
申请号：PCT/KR2004/002348
申请日：2004-09-15
申请人： JANG, Jin , GOH, Joon-Chul
发明人： JANG, Jin , GOH, Joon-Chul
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0262 , G09G2320/043
摘要： A drive circuit for organic light emitting diodes (OLEDs), and a method for driving OLEDs, using the drive circuit. The drive circuit includes pixel circuits, each of which includes a first transistor for receiving a data voltage, and outputting a drive current to an OLED, a second transistor for transmitting the data voltage to the first transistor, a third transistor for connecting the gate and drain of the first transistor, a capacitor for storing a gate voltage of the first transistor, and a fourth transistor connected to the drain of the first transistor. The OLED is connected to the source of the first transistor by a fifth transistor, or is directly connected to the source of the first transistor without using the fifth transistor. The drive circuit generates drive current, based on a non-uniformity-compensated threshold voltage of the first transistor, thereby obtaining a uniform luminance of the OLED.
摘要翻译：用于有机发光二极管（OLED）的驱动电路，以及使用驱动电路驱动OLED的方法。驱动电路包括像素电路，每个像素电路包括用于接收数据电压的第一晶体管，以及向OLED输出驱动电流;第二晶体管，用于将数据电压传输到第一晶体管;第三晶体管，用于连接栅极和第一晶体管的漏极，用于存储第一晶体管的栅极电压的电容器和连接到第一晶体管的漏极的第四晶体管。 OLED通过第五晶体管连接到第一晶体管的源极，或者直接连接到第一晶体管的源极而不使用第五晶体管。驱动电路基于第一晶体管的不均匀补偿阈值电压产生驱动电流，从而获得OLED的均匀亮度。

3. 发明申请

WO2004042805A1 PHASE TRANSITION METHOD OF AMORPHOUS MATERIAL USING CAP LAYER 审中-公开
标题翻译：使用CAP层的非晶材料的相变过程
公开(公告)号：WO2004042805A1
公开(公告)日：2004-05-21
申请号：PCT/KR2003/002362
申请日：2003-11-06
申请人： JANG, Jin , CHOI, Jonghyun
发明人： JANG, Jin , CHOI, Jonghyun
IPC分类号： H01L21/20
CPC分类号： H01L21/02667 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02672 , H01L21/268
摘要： The present invention provides a phase transition method of an amorphous material, comprising steps of: depositing the amorphous material on a dielectric substrate; forming a cap layer on the amorphous material; depositing a metal on the cap layer; and crystallizing the amorphous material. According to the present invention, the surface of the amorphous material is protected by the cap layer, so that clean surface can be obtained and the roughness of the surface can be remarkably reduced during thermal process and sample handling. In addition, the cap layer is disposed between the amorphous material and the metal to diffuse the metal, so that the metal contamination due to the direct contact of the metal and the amorphous material in the conventional method can be remarkably reduced.
摘要翻译：本发明提供了一种非晶材料的相变方法，包括以下步骤：将非晶材料沉积在电介质基片上; 在所述非晶材料上形成盖层; 在所述盖层上沉积金属; 并使非晶材料结晶。根据本发明，无定形材料的表面被盖层保护，从而可以获得清洁的表面，并且在热处理和样品处理期间可以显着降低表面的粗糙度。此外，盖层设置在非晶材料和金属之间以使金属扩散，从而可以显着降低由于金属和非晶材料在常规方法中的直接接触引起的金属污染。

4. 发明申请

WO2009017622A1 ULTRA THIN SINGLE CRYSTALLINE SEMICONDUCTOR TFT AND PROCESS FOR MAKING SAME 审中-公开
标题翻译：超薄单晶半导体TFT及其制造方法
公开(公告)号：WO2009017622A1
公开(公告)日：2009-02-05
申请号：PCT/US2008/008873
申请日：2008-07-22
申请人： CORNING INCORPORATED , AHN, Sung E , CITES, Jeffrey S , JANG, Jin , WANG, Chuanche , WILLIAMS, Carlo A
发明人： AHN, Sung E , CITES, Jeffrey S , JANG, Jin , WANG, Chuanche , WILLIAMS, Carlo A
IPC分类号： H01L29/786 , H01L21/762
CPC分类号： H01L29/78603 , H01L21/2007 , H01L29/78654
摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing a cleaved surface of the exfoliation layer; subjecting the cleaved surface of the exfoliation layer to a dry etching process to produce a single crystal semiconductor layer of about 5-20 nm thickness; and forming a thin film transistor in the thin semiconductor layer.
摘要翻译：用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露剥离层的切割表面; 使剥离层的切割表面进行干蚀刻工艺以产生约5-20nm厚度的单晶半导体层; 以及在所述薄半导体层中形成薄膜晶体管。

5. 发明申请

WO2009099535A2 THIN FILM TRANSISTOR HAVING LONG LIGHTLY DOPED DRAIN ON SOI SUBSTRATE AND PROCESS FOR MAKING SAME 审中-公开
标题翻译：在SOI衬底上具有长焦深漏极的薄膜晶体管及其制造方法
公开(公告)号：WO2009099535A2
公开(公告)日：2009-08-13
申请号：PCT/US2009/000533
申请日：2009-01-27
申请人： CORNING INCORPORATED , JANG, Jin , WANG, Chuanche , WILLIAMS, Carlo A
发明人： JANG, Jin , WANG, Chuanche , WILLIAMS, Carlo A
IPC分类号： H01L29/861
CPC分类号： H01L29/78621 , H01L27/3262
摘要： Methods and apparatus for producing a thin film transistor (TFT) result in: a glass or glass ceramic substrate; a single crystal semiconductor layer; a source structure disposed on the single crystal semiconductor layer; a drain structure disposed on the single crystal semiconductor layer; and a gate structure located with respect to the drain structure defining a lightly doped drain region therein, wherein a lateral length of the lightly doped drain region is such that the TFT exhibits a relatively low carrier mobility and moderate sub-threshold slope suitable for OLED display applications.
摘要翻译：用于制造薄膜晶体管（TFT）的方法和设备导致：玻璃或玻璃陶瓷衬底; 单晶半导体层; 设置在单晶半导体层上的源极结构; 设置在单晶半导体层上的漏极结构; 以及相对于在其中限定轻掺杂漏极区的漏极结构定位的栅结构，其中轻掺杂漏极区的横向长度使得TFT表现出相对较低的载流子迁移率和适合于OLED显示的适度亚阈值斜率应用。

6. 发明申请

WO2011040685A1 METHOD FOR FABRICATING FLEXIBLE BOARD USING SOLUTION PROCESS 审中-公开
标题翻译：使用解决方案制造柔性板的方法
公开(公告)号：WO2011040685A1
公开(公告)日：2011-04-07
申请号：PCT/KR2010/000618
申请日：2010-02-02
申请人： KYUNGHEE UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION , JANG, Jin , CHOI, Min Hee , HAN, Seung Hoon
发明人： JANG, Jin , CHOI, Min Hee , HAN, Seung Hoon
IPC分类号： H01L21/208
CPC分类号： B29C41/36 , B29C41/085 , B29C41/12 , B29C41/14 , B29C41/22 , B29K2105/167 , B29L2007/00 , B29L2031/3425 , B82Y30/00
摘要： Disclosed is a method for fabricating a flexible board using carbon nanotubes. The method includes applying a carbon nanotube-containing ink onto a substrate to form a deposited layer, and coating a polymeric or monomeric solution on the deposited carbon nanotube layer to form a thin film layer. In accordance with the method, the spin-coated carbon nanotube layer is coated with the polymeric or monomeric chemical solution to minimize an area where the base substrate contacts the polymeric film and thereby to advantageously form a flexible board readily separable from the substrate without applying any external stress or laser.
摘要翻译：公开了一种使用碳纳米管制造柔性板的方法。该方法包括将含碳纳米管的油墨施加到基材上以形成沉积层，并在沉积的碳纳米管层上涂覆聚合物或单体溶液以形成薄膜层。根据该方法，旋涂的碳纳米管层被涂覆有聚合物或单体化学溶液以最小化基底基材接触聚合物膜的面积，从而有利地形成易于与基材分离的柔性基板，而不施加任何外部应力或激光。

7. 发明申请

WO2009134075A9 MANUFACTURING METHOD OF INVERSE STAGGERED POLY-SI TFT WITH CENTER OFF-SET 审中-公开
公开(公告)号：WO2009134075A9
公开(公告)日：2009-11-05
申请号：PCT/KR2009/002255
申请日：2009-04-29
申请人： KYUNGHEE UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION , JANG, Jin , OH, Jae-Hwan , KANG, Dong-Han
发明人： JANG, Jin , OH, Jae-Hwan , KANG, Dong-Han
IPC分类号： H01L29/78
摘要： Disclosed herein is a method for manufacturing a poly-Si TFT with a center offset structure, including (1) preparing a buffer layer on a substrate, (2) preparing a gate electrode with a center offset structure on the buffer layer, (3) forming a gate insulating film on the gate electrode, (4) forming an active layer on the gate insulating film, (5) depositing an n+ amorphous silicon based ohmic contact layer over the active layer, (6) placing source/drain electrodes on the n+ amorphous silicon based ohmic contact layer, and (7) forming a passivation film as a protective layer on the source/drain electrodes. According to the disclosed method, an offset pattern is formed in the center of a gate constituting the TFT to form an offset region in the middle of an active layer channel, so that complicated processes for fabrication of the TFT may be simplified and leakage current may be noticeably inhibited.

8. 发明申请

WO2005022619A1 METHOD FOR FORMING SILICON THIN-FILM ON FLEXIBLE METAL SUBSTRATE 审中-公开
标题翻译：在柔性金属基材上形成硅薄膜的方法
公开(公告)号：WO2005022619A1
公开(公告)日：2005-03-10
申请号：PCT/KR2004/002213
申请日：2004-09-02
申请人： JANG, Jin , CHOI, Jong-Hyun , KIM, Seung-Soo , OH, Jae-Hwan , CHON, Jun-Hyuk
发明人： JANG, Jin , CHOI, Jong-Hyun , KIM, Seung-Soo , OH, Jae-Hwan , CHON, Jun-Hyuk
IPC分类号： H01L21/20
CPC分类号： C23C16/56 , C23C16/0272 , C23C16/24 , H01L21/02425 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/78603
摘要： Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
摘要翻译：公开了一种在基板上形成硅薄膜的方法，更具体地说，涉及一种在柔性金属基板上形成质量好的多晶硅薄膜的方法。准备金属基板（110），使金属基板（110）的表面变平。在金属基板（110）上形成绝缘膜（120）。在绝缘膜（120）上形成非晶硅层（130）。金属层（140）形成在非晶硅层（130）上。将金属基板（110）上的样品加热并结晶。

9. 发明申请

WO2010035935A1 ORGANIC THIN FILM DEVICE 审中-公开
标题翻译：有机薄膜装置
公开(公告)号：WO2010035935A1
公开(公告)日：2010-04-01
申请号：PCT/KR2009/002626
申请日：2009-05-19
申请人： KYUNGHEE UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION , JANG, Jin , RYU, Mi-Sun
发明人： JANG, Jin , RYU, Mi-Sun
IPC分类号： H01L51/00
CPC分类号： H01L51/448 , Y02E10/549
摘要： Disclosed herein is an organic thin film device. The organic thin film device includes a UV barrier layer, which has a UV blocking effect, in addition to at least one electrode and at least one organic semiconductor layer on a substrate. The organic thin film device employs a film or a coating liquid which comprises phenolic derivatives or cyanoacrylate derivatives exhibiting a UV-blocking effect in a wavelength of 400nm or less, so that photodecomposition of an organic material for use in fabrication of the organic thin film device by UV rays and sunlight can be minimized, thereby innovatively increasing lifetime of the device.
摘要翻译：本文公开了一种有机薄膜器件。除了至少一个电极和衬底上的至少一个有机半导体层之外，有机薄膜器件还包括具有UV阻挡效应的UV阻挡层。有机薄膜器件采用膜或涂覆液体，其包含在400nm或更小的波长下表现出UV阻挡作用的酚类衍生物或氰基丙烯酸酯衍生物，从而有机材料的光分解用于制造有机薄膜器件通过紫外线和阳光可以最小化，从而创新地增加设备的使用寿命。

10. 发明申请

WO2010030068A1 METHOD FOR PHASE TRANSITION OF AMORPHOUS MATERIAL 审中-公开
标题翻译：非晶材料相转移方法
公开(公告)号：WO2010030068A1
公开(公告)日：2010-03-18
申请号：PCT/KR2009/002625
申请日：2009-05-19
申请人： KYUNGHEE UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION , JANG, Jin , OH, Jae-Hwan , KANG, Dong-Han , CHEON, Jun-Hyuk
发明人： JANG, Jin , OH, Jae-Hwan , KANG, Dong-Han , CHEON, Jun-Hyuk
IPC分类号： H01L21/8247
CPC分类号： H01L21/02672 , H01L21/02532 , H01L27/1277
摘要： Disclosed herein is a method of crystallizing an amorphous material for use in fabrication of thin film transistors. The method includes forming an amorphous silicon layer on a substrate, depositing a Ni metal layer on part of the amorphous silicon layer, and heat-treating the amorphous silicon layer to cause phase transition of the amorphous silicon, wherein the Ni metal layer is deposited to an average thickness of 0.79Å or less. The method can crystallize an amorphous material for use in thin film transistors using the metal induced lateral crystallization while restricting thickness and density of Ni, thereby minimizing current leakage in the thin film transistor.
摘要翻译：本文公开了一种使用于制造薄膜晶体管的非晶材料的结晶方法。该方法包括在衬底上形成非晶硅层，在非晶硅层的一部分上沉积Ni金属层，并对非晶硅层进行热处理以引起非晶硅的相变，其中Ni金属层被沉积到平均厚度为0.79Å以下。该方法可以使用金属诱导横向结晶在薄膜晶体管中使用非晶材料，同时限制Ni的厚度和密度，从而最小化薄膜晶体管中的电流泄漏。

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