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1. 发明申请

WO2012022349A3 METHOD FOR PRODUCING A SOLAR CELL WITH A SELECTIVE EMITTER 审中-公开
标题翻译：一种用于生产太阳能电池具有选择性发射极
公开(公告)号：WO2012022349A3
公开(公告)日：2013-07-18
申请号：PCT/DE2011075181
申请日：2011-08-02
申请人： CENTROTHERM PHOTOVOLTAICS AG , OLKOWSKA-OETZEL JOLANTA , ISENBERG JOERG , TEPPE ANDREAS , GEIGER MATTHIAS
发明人： OLKOWSKA-OETZEL JOLANTA , ISENBERG JOERG , TEPPE ANDREAS , GEIGER MATTHIAS
IPC分类号： H01L31/18
CPC分类号： H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Method for producing a solar cell with a selective emitter comprising the steps of forming (10, 12, 14) a dopant-containing glass layer (55) on at least one part of a surface of a solar cell substrate (50), forming (16) a weakly doped emitter (58) in regions of the solar cell substrate (50) that are covered by the glass layer (55) by indiffusing (16) dopant from the glass layer (55) into the solar cell substrate (50), locally indiffusing (18) additional dopant from the glass layer (55) into the solar cell substrate (50) by locally heating (18) regions of the solar cell substrate (50) that are located below the glass layer (55) for the purpose of locally forming (18) heavily doped emitter regions (60), wherein, as dopant-containing glass layer (55), such a glass layer (55) is formed (10, 12, 14) on the at least one part of the surface of the solar cell substrate (50), which glass layer has a lower dopant concentration in a first partial layer (52) of the glass layer (55), said first partial layer being located nearer the surface of the solar cell substrate (50), than in a second partial layer (54) of the glass layer (55), said second partial layer being located further away from the surface of the solar cell substrate (50).
摘要翻译：一种用于轻掺杂发射极的制造太阳能电池与包含形成在太阳能电池基板（50）的表面的至少一部分上含有掺杂剂玻璃层（55）中的步骤（10，12，14）的选择性发射极，形成（16）处理（（58）覆盖在（玻璃层55）的太阳能电池基板50）（的区域由从玻璃层（55）（在该太阳能电池基板50的掺杂剂）的内部，局部扩散（18）附加的从玻璃层的掺杂剂的向内扩散16）（55 （）（在太阳能电池基板50）代入（通过局部加热18）位于（在玻璃层下方55），用于本地培训18的目的在太阳能电池基板（50）的）的区域）重掺杂发射极区域（60，其中含有作为掺杂剂玻璃层（ 55）这样的玻璃层（55形成）在所述至少（太阳能电池基板50）（10，12的表面的一部分，14）是一个 ř接近位于（50）的太阳能电池基板的玻璃层（55）具有从所述玻璃层（55）的所述太阳能电池基板（50）远离位于第二局部层（54）的表面的杂质浓度比在一个进一步的第一部分层（52）的表面上。

2. 发明申请

WO2011085715A3 METHOD FOR CREATING A TWO-STAGE DOPING IN A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：方法培训两级掺杂在半导体衬底
公开(公告)号：WO2011085715A3
公开(公告)日：2012-08-16
申请号：PCT/DE2011000013
申请日：2011-01-11
申请人： CENTROTHERM PHOTOVOLTAICS AG , TEPPE ANDREAS , GEIGER MATTHIAS , SCHLOSSER REINHOLD , ISENBERG JOERG , KUEHN TINO , MUENZER ADOLF , KELLER STEFFEN
发明人： TEPPE ANDREAS , GEIGER MATTHIAS , SCHLOSSER REINHOLD , ISENBERG JOERG , KUEHN TINO , MUENZER ADOLF , KELLER STEFFEN
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for creating a two-stage doping in a semiconductor substrate (80), wherein in a doping area (89) to be provided with the two-stage doping (90, 92), dopant is diffused into the semiconductor substrate (80) by means of heavy diffusion (10) and in this way a high surface concentration of dopant is created, and after the heavy diffusion (10) the semiconductor substrate (80) is locally heated (12) in areas (91) of the two-stage doping (90, 92) to be doped more heavily and an oxide layer (88) is created (16) on the doping area (89).
摘要翻译：成由强扩散来提供形成在半导体衬底（80）的两级掺杂，其中，在所述两级掺杂（90，92）中的一个的方法，杂质区（89）（10）在所述半导体衬底（80）的掺杂剂被扩散，并在这时，形成高表面浓度掺杂剂，强扩散（10）之后在两级掺杂（90，92）在半导体衬底（80）的更强烈的掺杂区域（91）被局部加热（12），并且在杂质区域（89）形成氧化物层（88）（16）。

3. 发明申请

WO2011107092A2 METHOD FOR DOPING A SEMICONDUCTOR SUBSTRATE, AND SOLAR CELL HAVING TWO-STAGE DOPING 审中-公开
标题翻译：方法用于掺杂半导体衬底太阳电池两级掺杂
公开(公告)号：WO2011107092A2
公开(公告)日：2011-09-09
申请号：PCT/DE2011075033
申请日：2011-03-03
申请人： CENTROTHERM PHOTOVOLTAICS AG , TEPPE ANDREAS , GEIGER MATTHIAS , SCHLOSSER REINHOLD , MUENZER ADOLF , SCHOENE JAN , ISENBERG JOERG , KUEHN TINO , KELLER STEFFEN
发明人： TEPPE ANDREAS , GEIGER MATTHIAS , SCHLOSSER REINHOLD , MUENZER ADOLF , SCHOENE JAN , ISENBERG JOERG , KUEHN TINO , KELLER STEFFEN
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/068 , H01L21/02587 , H01L21/02675 , H01L21/268 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for doping a semiconductor substrate (50), wherein the semiconductor substrate (50) is heated by irradiation (14) with laser radiation (60) and at the same time dopant from a dopant source (54) is diffused (16) into the semiconductor substrate (50) in heated regions (52), and wherein when the semiconductor substrate (50) is heated by the irradiation (14) with laser radiation (60), a surface portion of the semiconductor substrate (50) that is less than 10% of the total surface of all irradiated regions (62) is melted (18) and recrystallized (20). The invention further relates to a solar cell.
摘要翻译：（50）扩散的一种用于与激光辐射（60），而在被加热的区域（52）从在所述半导体衬底中的掺杂剂源（54）的掺杂剂掺杂的半导体衬底（50），其中所述半导体衬底（50）是通过照射（14）加热方法（16），并且其中，在所述加热通过辐照（14）利用激光辐射在半导体基板（50）（60）包括一表面的半导体基片的熔融（20）部分（50）（18）和重结晶是小于10％所有暴露的区域的总面积（62），以及太阳能电池。

4. 发明申请

WO2010052565A3 METHOD FOR MANUFACTURING A SOLAR CELL WITH A TWO-STAGE DOPING 审中-公开
标题翻译：用于制造具有两级放电的太阳能电池的方法
公开(公告)号：WO2010052565A3
公开(公告)日：2012-04-26
申请号：PCT/IB2009007380
申请日：2009-11-09
申请人： CENTROTHERM PHOTOVOLTAICS AG , ESTURO-BRETON AINHOA , GEIGER MATTHIAS , KELLER STEFFEN , SCHLOSSER REINHOLD , VOYER CATHARINE , MAIER JOHANNES , BRESELGE MARTIN , MUENZER ADOLF , FRIESS TOBIAS , KUEHN TINO
发明人： ESTURO-BRETON AINHOA , GEIGER MATTHIAS , KELLER STEFFEN , SCHLOSSER REINHOLD , VOYER CATHARINE , MAIER JOHANNES , BRESELGE MARTIN , MUENZER ADOLF , FRIESS TOBIAS , KUEHN TINO
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/022425 , Y02E10/547 , Y02P70/521
摘要： Method for manufacturing a solar cell with a two-stage doping (88, 89) including the following method steps of forming (14, 48) an oxide layer (82), which can be penetrated by a first dopant, on at least one part of the surface of a solar cell substrate (80), of forming (16; 50) an opening in the oxide layer (82) in at least one high-doping region (88) by removing (16; 50) the oxide layer (82) in this high-doping region (88), of diffusing (28) the first dopant into the at least one high- doping region (88) of the solar cell substrate (80) through the opening and of diffusing (28) the first dopant into the solar cell substrate (80) through the oxide layer (82), wherein the diffusing-in (28) through the openings and through the oxide layer (82) takes place at the same time in a common diffusion step and the solar cell substrate (80) is diffused (28) in the common diffusion step (28) in an at least partially hydrophilic state.
摘要翻译：一种用于制造具有两级掺杂（88,89）的太阳能电池的方法，包括以下方法步骤：在至少一个部分上形成（14,48）可被第一掺杂剂渗透的氧化物层（82）通过去除（16; 50）氧化物层（16; 50）在至少一个高掺杂区域（88）中在氧化物层（82）中形成（16; 50）开口的太阳能电池基板（80）的表面; 82）在该高掺杂区域（88）中通过开口将第一掺杂剂扩散（28）至太阳能电池基板（80）的至少一个高掺杂区域（88）并扩散（28）第一掺杂剂通过氧化物层（82）进入太阳能电池基板（80），其中通过开口和通过氧化物层（82）的扩散（28）在公共扩散步骤中同时进行，并且太阳能电池基板（80）在共同扩散步骤（28）中以至少部分亲水状态扩散（28）。

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