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1. 发明申请

WO2009068869A1 ORGANIC THIN FILM TRANSISTORS AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：WO2009068869A1
公开(公告)日：2009-06-04
申请号：PCT/GB2008/003941
申请日：2008-11-27
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , WHITING, Gregory , HALLS, Jonathan , BURROUGHES, Jeremy , MURPHY, Craig
发明人： WHITING, Gregory , HALLS, Jonathan , BURROUGHES, Jeremy , MURPHY, Craig
IPC分类号： H01L51/10
CPC分类号： H01L51/105 , H01L51/002 , H01L51/0036 , H01L51/0039 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor, and a method of making the same, comprising a source (2) and drain (4) electrode and organic semi-conductive material (8) disposed therebetween in a channel region, in which the source and drain electrodes have disposed on them a thin self-assembled layer (14) of a material comprising a dopant moiety for chemically doping the organic semi-conductive material by accepting electrons, the dopant moiety having a redox potential of at least 0.3eV relative to a saturated calomel electrode in acetonitrile.
摘要翻译：一种有机薄膜晶体管及其制造方法，包括源极（2）和漏极（4）电极以及设置在沟道区域内的有机半导体材料（8），其中源极和漏极具有在其上设置薄的自组装层（14），其包含掺杂剂部分，用于通过接受电子来化学掺杂有机半导体材料，所述掺杂剂部分相对于饱和甘汞电极具有至少0.3eV的氧化还原电位在乙腈中。

2. 发明申请

WO2009098477A1 METHOD OF FABRICATING TOP GATE ORGANIC SEMICONDUCTOR TRANSISTORS 审中-公开
标题翻译：制造顶栅有机半导体晶体管的方法
公开(公告)号：WO2009098477A1
公开(公告)日：2009-08-13
申请号：PCT/GB2009/000342
申请日：2009-02-06
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , BURROUGHES, Jeremy , WHITING, Gregory , HALLS, Jonathan
发明人： BURROUGHES, Jeremy , WHITING, Gregory , HALLS, Jonathan
IPC分类号： H01L51/05 , H01L51/00
CPC分类号： H01L51/0541 , H01L27/283 , H01L51/0017
摘要： The present invention provides a method of fabricating a top-gate organic semiconductor transistor comprising: providing a substrate; depositing a source and drain electrode over the substrate; depositing an organic semiconductor material in a channel between the source and drain electrode and over at least a portion of the source and drain electrodes; depositing a dielectric material over the organic semiconductor material; depositing a gate electrode over the dielectric material and organic semiconductor material in the channel; removing a portion of the dielectric material and organic semiconductor material, wherein the gate electrode acts as a mask to shield the underlying organic semiconductor material and dielectric material during the step of removing.
摘要翻译：本发明提供一种制造顶栅有机半导体晶体管的方法，包括：提供衬底; 在所述衬底上沉积源极和漏极; 将有机半导体材料沉积在源电极和漏电极之间的沟道中以及在源电极和漏电极的至少一部分上方; 在所述有机半导体材料上沉积电介质材料; 在沟道中的电介质材料和有机半导体材料上沉积栅电极; 去除介电材料和有机半导体材料的一部分，其中栅极用作掩模以在去除步骤期间屏蔽下面的有机半导体材料和电介质材料。

3. 发明申请

WO2002059121A1 MONOMER FOR USE IN PREPARATION OF A POLYMER TO BE USED IN OPTICAL DEVICES 审中-公开
标题翻译：用于制备用于光学装置的聚合物的单体
公开(公告)号：WO2002059121A1
公开(公告)日：2002-08-01
申请号：PCT/GB2002/000294
申请日：2002-01-23
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , BURROUGHES, Jeremy , TOWNS, Carl , POUNDS, Thomas , HALLS, Jonathan
发明人： BURROUGHES, Jeremy , TOWNS, Carl , POUNDS, Thomas , HALLS, Jonathan
IPC分类号： C07D417/14
CPC分类号： H01L51/0036 , C07D417/14 , C08G61/10 , C09K11/06 , C09K2211/1007 , C09K2211/1051 , C09K2211/1092 , C09K2211/1408 , C09K2211/1416 , C09K2211/1425 , C09K2211/1458 , C09K2211/1483 , H01L51/0039 , H01L51/0043 , H01L51/4253 , H01L51/5012 , Y02E10/549 , Y02P70/521 , Y10S428/917
摘要： A monomer having general Formula (I) which may be substituted or unsubstituted: where E and E are the same or different and are reactive groups capable of undergoing chain extension; X is O, S, NR 5 , R 5 C-CR 6 or R 5 C=CR 6 ; Y is O, S, NR 7 , R 7 C-CR 8 or R 7 C=CR 8 ; R 5 , R 6 R 7 and R 8 are the same or different and each is independently H or a substituent group; and each Ar is the same or different and is independently a substituted or unsubstituted aryl or heteroaryl group.
摘要翻译：具有通式（I）的单体，其可以是取代或未取代的：其中E和E相同或不同，并且是能够进行链延长的反应性基团; X为O，S，NR5，R5C-CR6或R5C = CR6; Y是O，S，NR7，R7C-CR8或R7C = CR8; R5，R6，R7和R8相同或不同，各自独立地为H或取代基; 并且每个Ar相同或不同，并且独立地为取代或未取代的芳基或杂芳基。

4. 发明申请

WO2007128965A1 ELECTRIC DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：电气设备及其制造方法
公开(公告)号：WO2007128965A1
公开(公告)日：2007-11-15
申请号：PCT/GB2007/001245
申请日：2007-04-04
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LIMITED , ZHENG, Zijian , HUCK, Wilhelm , FRIEND, Richard , HALLS, Jonathan , BURROUGHES, Jeremy
发明人： ZHENG, Zijian , HUCK, Wilhelm , FRIEND, Richard , HALLS, Jonathan , BURROUGHES, Jeremy
IPC分类号： H01L51/40 , H01L51/50 , H01L27/32
CPC分类号： H01L51/0005 , H01L27/3241 , H01L51/0014 , H01L51/50
摘要： A process for manufacturing an electrical device, the process comprising the steps: providing a substrate; bringing a stamp into contact with the substrate whereby areas of the substrate contacted by the stamp have decreased wettability; and depositing a liquid comprising an electrically active material over areas of the substrate located between the areas of decreased wettability.
摘要翻译：一种用于制造电气设备的方法，所述方法包括以下步骤：提供基板; 使印模与基板接触，由此与印模接触的基板的区域具有降低的润湿性; 以及将包含电活性材料的液体沉积在位于所述润湿性降低的区域之间的所述基底的区域上。

5. 发明申请

WO2010015833A1 SURFACE TREATED SUBSTRATES FOR TOP GATE ORGANIC THIN FILM TRANSISTORS 审中-公开
标题翻译：用于顶栅有机薄膜晶体管的表面处理基板
公开(公告)号：WO2010015833A1
公开(公告)日：2010-02-11
申请号：PCT/GB2009/001941
申请日：2009-08-07
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , KUGLER, Thomas , BURROUGHES, Jeremy , CARTER, Julian , HALLS, Jonathan , NEWSOME, Christopher
发明人： KUGLER, Thomas , BURROUGHES, Jeremy , CARTER, Julian , HALLS, Jonathan , NEWSOME, Christopher
IPC分类号： H01L51/05
CPC分类号： H01L51/105 , H01L51/0094 , H01L51/0096 , H01L51/0541 , H01L51/0562 , Y02E10/549
摘要： A method of forming a top gate transistor comprising the steps of providing a substrate carrying source and drain electrodes defining a channel region therebetween; treating at least part of the surface of the channel region to reduce its polarity; and depositing a semiconductor layer in the channel.
摘要翻译：一种形成顶栅晶体管的方法，包括以下步骤：提供在其间限定沟道区的衬底承载源极和漏电极; 处理通道区域的至少一部分表面以降低其极性; 以及在沟道中沉积半导体层。

6. 发明申请

WO2010015822A1 METHOD OF MAKING ORGANIC THIN FILM TRANSISTORS USING A LASER INDUCED THERMAL TRANSFER PRINTING PROCESS 审中-公开
标题翻译：使用激光诱导热转印印刷工艺制造有机薄膜晶体管的方法
公开(公告)号：WO2010015822A1
公开(公告)日：2010-02-11
申请号：PCT/GB2009/001925
申请日：2009-08-05
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , KUGLER, Thomas , BURROUGHES, Jeremy , CARTER, Julian , SMITH, Euan , HALLS, Jonathan , NEWSOME, Christopher
发明人： KUGLER, Thomas , BURROUGHES, Jeremy , CARTER, Julian , SMITH, Euan , HALLS, Jonathan , NEWSOME, Christopher
IPC分类号： H01L51/10
CPC分类号： H01L51/0022 , H01L51/0013 , H01L51/0036 , H01L51/0039 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.
摘要翻译：本发明提供一种制造有机薄膜晶体管（TFT）的方法，包括：提供衬底层; 提供栅电极层; 提供介电材料层; 提供有机半导体（OSC）材料层; 提供源极和漏极电极层; 并且其中使用激光诱导热成像（LITI）工艺沉积一层或多层。优选地，有机TFT是底栅器件，并且源极和漏极电极沉积在有机半导体层上，或者使用LITI沉积在电介质材料层上。进一步优选地，可以在OSC材料和源极和漏极电极层之间提供掺杂剂材料，其中掺杂剂材料也可以使用LITI沉积。还优选地，其中掺杂剂可以是电荷中性掺杂剂，例如取代的TCNQ或F4TCNQ。

7. 发明申请

WO2008122780A2 ACTIVE MATRIX OPTICAL DEVICE 审中-公开
标题翻译：有源矩阵光学器件
公开(公告)号：WO2008122780A2
公开(公告)日：2008-10-16
申请号：PCT/GB2008/001190
申请日：2008-04-03
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , BURROUGHES, Jeremy , BALE, Mark , GARBETT, Mark , HALLS, Jonathan
发明人： BURROUGHES, Jeremy , BALE, Mark , GARBETT, Mark , HALLS, Jonathan
IPC分类号： H01L27/32
CPC分类号： H01L27/3246 , H01L27/3258 , H01L27/3274 , H01L51/0036 , H01L51/0039 , H01L51/0055 , H01L51/0545
摘要： An active matrix organic optical device comprising a plurality of organic thin film transistors and a plurality of pixels disposed on a common substrate, wherein a common bank layer is provided for the organic thin film transistors and the pixels, the common bank layer defining a plurality of wells, wherein some of the wells contain the organic semiconducting material of the organic thin film transistors therein and others of the wells contain organic optically active material of the pixels therein.
摘要翻译：一种有源矩阵有机光学器件，包括多个有机薄膜晶体管和设置在公共衬底上的多个像素，其中为有机薄膜晶体管和像素提供公共堤层，公共堤层限定多个孔，其中一些阱包含有机薄膜晶体管的有机半导体材料，其中的阱包含其中的像素的有机光学活性材料。

8. 发明申请

WO2006064183A1 METHOD OF PREPARING OPTO-ELECTRONIC DEVICE 审中-公开
标题翻译：制备光电器件的方法
公开(公告)号：WO2006064183A1
公开(公告)日：2006-06-22
申请号：PCT/GB2005/004678
申请日：2005-12-07
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , WILSON, Richard , BURROUGHES, Jeremy , HALLS, Jonathan
发明人： WILSON, Richard , BURROUGHES, Jeremy , HALLS, Jonathan
IPC分类号： H01L51/42
CPC分类号： B05D5/12 , B82Y10/00 , H01L31/18 , H01L51/0003 , H01L51/0015 , H01L51/0026 , H01L51/0036 , H01L51/0037 , H01L51/0046 , H01L51/424 , H01L51/4253 , H01L51/50 , H01L51/5048 , Y02E10/549
摘要： A method is provided to produce an opto-electronic device comprising a substrate (15), a first electrode layer (16), a second electrode layer (19) of opposite polarity to said first electrode layer, any interlayers (17, 18) and, between said first and second electrode layers, a first functional material (2) in interfacial contact with a second functional material (3), wherein the first functional material (2) has the structure of a laterally porous film and the second functional material (3) is a film disposed over and interpenetrating with the film of the first functional material (2).
摘要翻译：提供了一种制造光电子器件的方法，该光电器件包括与所述第一电极层相反极性的衬底（15），第一电极层（16），第二电极层（19），任何中间层（17,18）和在所述第一和第二电极层之间，与第二功能材料（3）界面接触的第一功能材料（2），其中所述第一功能材料（2）具有横向多孔膜的结构和所述第二功能材料 3）是设置在第一功能材料（2）的膜上并与之互穿的膜。

9. 发明申请

WO2009077742A1 ELECTRONIC DEVICES AND METHODS OF MAKING THE SAME USING SOLUTION PROCESSING TECHNIQUES 审中-公开
标题翻译：电子设备及其使用解决方案处理技术制备相同方法
公开(公告)号：WO2009077742A1
公开(公告)日：2009-06-25
申请号：PCT/GB2008/004141
申请日：2008-12-17
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , HALLS, Jonathan , WHITING, Gregory
发明人： HALLS, Jonathan , WHITING, Gregory
IPC分类号： H01L51/40
CPC分类号： H01L51/0012 , H01L51/0541 , H01L51/0545 , H01L51/56
摘要： A method of manufacturing an electronic device, the method comprising: providing a substrate (200); forming a patterned layer of removable material (202) on the substrate; depositing, using an indiscriminate deposition method, a layer of a surface energy modifying material (204) over the substrate comprising the patterned layer of removable material; removing the removable material from the substrate thereby forming a patterned surface of the substrate with surface energy modifying material in those areas not previously covered by the removable material and no surface energy modifying material in those areas previously covered by the removable material; and depositing one or more active components (206, 208) from solution on the patterned surface of the substrate using an indiscriminate deposition technique whereby a patterned layer of the one or more active components is formed based on the pattern of surface energy modifying material on the substrate
摘要翻译：一种制造电子器件的方法，所述方法包括：提供衬底（200）; 在所述衬底上形成可移除材料（202）的图案化层; 使用不加选择的沉积方法沉积在包含可移除材料的图案化层的衬底上的表面能改性材料层（204）; 从衬底移除可移除材料，从而在先前未被可除去材料覆盖的那些区域中形成具有表面能改性材料的衬底的图案化表面，并且在先前被可除去材料覆盖的那些区域中没有表面能改变材料; 以及使用不加选择的沉积技术将溶液中的溶液中的一种或多种活性组分（206,208）沉积在所述图案化的表面上，由此基于所述表面能改变材料的图案形成所述一种或多种活性组分的图案化层基质

10. 发明申请

WO2008122774A1 ORGANIC THIN FILM TRANSISTORS 审中-公开
标题翻译：有机薄膜晶体管
公开(公告)号：WO2008122774A1
公开(公告)日：2008-10-16
申请号：PCT/GB2008/001183
申请日：2008-04-03
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , HALLS, Jonathan , WHITING, Gregory
发明人： HALLS, Jonathan , WHITING, Gregory
IPC分类号： H01L51/05
CPC分类号： H01L51/052 , H01L51/0018 , H01L51/0541 , H01L51/0545
摘要： A method of forming an organic thin film transistor comprising: providing a structure comprising source (2) and drain (4) electrodes with a channel region therebetween, a gate electrode (1), and a dielectric layer (10) disposed between the source (2) and drain (4) electrodes and the gate electrode (1); and patterning the dielectric layer (10) using the source (2) and drain (4) electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.
摘要翻译：一种形成有机薄膜晶体管的方法，包括：提供包括源极（2）和漏极（4）电极的结构，其间具有沟道区，栅电极（1）和介于电介质层（10）之间的电介质层（10） 2）和漏极（4）电极和栅电极（1）; 以及使用所述源极（2）和所述漏极（4）电极作为掩模对所述介电层（10）进行构图，以在所述沟道区域中形成比所述沟道区域相邻的介电材料区域更薄的电介质材料区域。

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