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1. 发明申请

WO2017075993A1 THIN FILM TRANSISTOR AND METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY APPARATUS 审中-公开
标题翻译：薄膜晶体管及其方法，阵列基板和显示装置
公开(公告)号：WO2017075993A1
公开(公告)日：2017-05-11
申请号：PCT/CN2016/085100
申请日：2016-06-07
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： HSIN, Lungpao
IPC分类号： H01L29/786
CPC分类号： H01L29/78618 , H01L27/1248 , H01L27/1259 , H01L29/45 , H01L29/4908 , H01L29/6675 , H01L29/66757 , H01L29/78675
摘要： A method for forming a thin film transistor (TFT), a related TFT, an array substrate, and a display apparatus are provided. The method comprises: forming a pattern of an active layer (02) on a base substrate (01) and insulated from a gate electrode (06); forming a first initial ohmic contacting layer (03) and a second initial ohmic contacting layer (04) on the active layer (02); forming a source electrode (08) on the first initial ohmic contacting layer (03), and a drain electrode (09) on the second initial ohmic contacting layer (04); and performing a heating treatment to the base substrate (01) having the source electrode (08) and the drain electrode (09) thereon, such that metal atoms in the source electrode (08) diffuse to the first initial ohmic contacting layer (03) to form a first ohmic contacting layer (10), and metal atoms in the drain electrode (09) diffuse to the second initial ohmic contacting layer (04) to form a second ohmic contacting layer (11).
摘要翻译：提供了一种用于形成薄膜晶体管（TFT），相关TFT，阵列基板和显示装置的方法。该方法包括：在基础衬底（01）上形成有源层（02）的图案并与栅电极（06）绝缘; 在有源层（02）上形成第一初始欧姆接触层（03）和第二初始欧姆接触层（04）; 在所述第一初始欧姆接触层（03）上形成源电极（08），以及在所述第二初始欧姆接触层（04）上形成漏电极（09）; 并对其上具有源电极（08）和漏电极（09）的基础基板（01）进行加热处理，使得源电极（08）中的金属原子扩散到第一初始欧姆接触层（03）以形成第一欧姆接触层（10），并且漏电极（09）中的金属原子扩散到第二初始欧姆接触层（04）以形成第二欧姆接触层（11）

2. 发明申请

WO2017016235A1 LIGHT EMITTING DIODE, DISPLAY SUBSTRATE AND DISPLAY DEVICE HAVING THE SAME, AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：发光二极管，显示基板及其显示装置及其制造方法
公开(公告)号：WO2017016235A1
公开(公告)日：2017-02-02
申请号：PCT/CN2016/078554
申请日：2016-04-06
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： FANG, Jingang , LIU, Xiaodi , WANG, Dongfang , HSIN, Lungpao
IPC分类号： H01L27/12 , H01L21/77 , H01L27/32
CPC分类号： H01L51/5265 , H01L27/3211 , H01L27/3244 , H01L51/5218 , H01L51/56 , H01L2227/323 , H01L2251/305 , H01L2251/308 , H01L2251/558
摘要： A light emitting diode comprising a plurality of sub-pixels comprises a first electrode layer, wherein the first electrode layer is a reflective electrode layer, a second electrode layer, a light emitting layer between the first electrode layer and the second electrode layer, a first microcavity tuning layer sandwiched by the first electrode layer and the light emitting layer within the plurality of sub-pixels and a second microcavity tuning layer sandwiched by the first microcavity tuning layer and the light emitting layer within at least one of the plurality of sub-pixels. The first microcavity tuning layer is sandwiched by the first electrode layer and the second microcavity tuning layer within the at least one of the plurality of sub-pixels. The first microcavity tuning layer is made of a material including a transparent conductive material in a first state and the second microcavity tuning layer is made of a material including a transparent conductive material in a second state. The first state and the second state are different states selected from a crystalline state and an amorphous state.
摘要翻译：包括多个子像素的发光二极管包括第一电极层，其中第一电极层是反射电极层，第二电极层，在第一电极层和第二电极层之间的发光层，第一电极层由多个子像素内的第一电极层和发光层夹持的微腔调谐层和由第一微腔调谐层和发光层夹在第一微腔调谐层内的多个子像素中的至少一个子像素。第一微腔调谐层被多个子像素中的至少一个子像素内的第一电极层和第二微腔调谐层夹在中间。第一微腔调谐层由包括第一状态的透明导电材料的材料制成，第二微腔调谐层由包括第二状态的透明导电材料的材料制成。第一状态和第二状态是从结晶状态和非晶态选择的不同状态。

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