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1. 发明申请

WO2016078862A1 METROLOGY METHOD AND APPARATUS 审中-公开
标题翻译：计量方法和装置
公开(公告)号：WO2016078862A1
公开(公告)日：2016-05-26
申请号：PCT/EP2015/074460
申请日：2015-10-22
申请人： ASML NETHERLANDS B.V.
发明人： LU, Yen-Wen , CHEN, Jay, Jianhui , LIU, Wei , MENCHTCHIKOV, Boris , WANG, Jen-Shiang , HUANG, Te-Chih
IPC分类号： G03F7/20
CPC分类号： G01N21/8806 , G01B11/272 , G01N21/9501 , G01N2021/8822 , G03F7/70516 , G03F7/70633 , G03F7/70683
摘要： Disclosed herein is a method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction order; determining the overlay error from by the corrected characteristics; and adjusting characteristics of the lithographic process based on the overlay error.
摘要翻译：本文公开了一种确定第一结构和第二结构之间的覆盖误差的方法，其中第一结构和第二结构位于衬底上的不同层上，并通过光刻工艺成像到衬底上，该方法包括：获得明显叠加错误; 获得由除了第一和第二结构的不对准之外的因素引起的系统误差; 并通过从明显重叠错误中去除系统误差来确定覆盖误差。该方法可以替代地包括通过第一和第二结构的重叠部分获得衍射衍射级数的明显特征; 获得衍射级的校正特性; 通过校正的特征确定覆盖误差; 并基于叠加误差调整光刻过程的特性。

2. 发明申请

WO2017202602A1 SELECTION OF SUBSTRATE MEASUREMENT RECIPES 审中-公开
标题翻译：基板测量配方的选择
公开(公告)号：WO2017202602A1
公开(公告)日：2017-11-30
申请号：PCT/EP2017/061049
申请日：2017-05-09
申请人： ASML NETHERLANDS B.V.
发明人： WANG, Jen-Shiang , CHEN, Jay, Jianhui
IPC分类号： G03F7/20 , G01D18/00 , G01N21/95
摘要： A method including: obtaining a relationship between a performance indicator of a substrate measurement recipe and a parameter of the substrate measurement recipe; deriving a range of the parameter from the relationship, wherein absolute values of the performance indicator satisfy a first condition or a magnitude of variation of the performance indicator satisfies a second condition, when the first parameter is in the range; selecting a substrate measurement recipe that has the parameter in the range; and inspecting a substrate with the selected substrate measurement recipe.
摘要翻译：一种方法，包括：获得衬底测量配方的性能指标与衬底测量配方的参数之间的关系; 当所述第一参数在所述范围内时，从所述关系导出所述参数的范围，其中，所述性能指标的绝对值满足第一条件或所述性能指标的变化幅度满足第二条件; 选择具有该范围中的参数的衬底测量配方; 并用选定的基板测量配方检查基板。

3. 发明申请

WO2019224176A1 METHOD FOR DETERMINING STACK CONFIGURATION OF SUBSTRATE 审中-公开
公开(公告)号：WO2019224176A1
公开(公告)日：2019-11-28
申请号：PCT/EP2019/063053
申请日：2019-05-21
申请人： ASML NETHERLANDS B.V.
发明人： LI, Danying , FAN, Chi-Hsiang , ELMALK, Abdalmohsen , ZHANG, Youping , CHEN, Jay, Jianhui , HUANG, Kui-Jun
IPC分类号： G03F7/20
摘要： Described herein is are method for determining a stack configuration for a substrate subjected a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map; and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.

4. 发明申请

WO2018141503A1 METROLOGY METHOD AND APPARATUS AND ASSOCIATED COMPUTER PRODUCT 审中-公开
公开(公告)号：WO2018141503A1
公开(公告)日：2018-08-09
申请号：PCT/EP2018/050344
申请日：2018-01-08
申请人： ASML NETHERLANDS B.V.
发明人： URBANCZYK, Adam, Jan , VAN DER LAAN, Hans , DA COSTA ASSAFRAO, Alberto , TSENG, Chien-Hung , CHEN, Jay, Jianhui
IPC分类号： G03F7/20 , G01N21/47 , H01L21/66 , G01N21/956
摘要： Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing (1020) measured target response spectral sequence data (1010) relating to the measurement response of actual targets (1000) to equivalent reference target response sequence data (1030) relating to a measurement response of the targets as designed; and performing (1040) a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining (1050) stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.

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