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1. 发明申请

WO2010008711A2 CATHODE WITH INNER AND OUTER ELECTRODES AT DIFFERENT HEIGHTS 审中-公开
标题翻译：内外电极在不同高度的阴极
公开(公告)号：WO2010008711A2
公开(公告)日：2010-01-21
申请号：PCT/US2009/046994
申请日：2009-06-11
申请人： APPLIED MATERIALS, INC. , HOFFMAN, Daniel, J. , BUCHBERGER, Douglas, A. , KATS, Semyon, L. , KATZ, Dan
发明人： HOFFMAN, Daniel, J. , BUCHBERGER, Douglas, A. , KATS, Semyon, L. , KATZ, Dan
IPC分类号： H05H1/34 , H01L21/205 , H01L21/3065
CPC分类号： H01L21/6833
摘要： An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing.
摘要翻译：用于在衬底的外围边缘之上和之外产生均匀等离子体的设备具有电介质体，该电介质体具有嵌入其中的上电极和环形电极。上电极的外周与环形电极的内周重叠。在一个实施例中，上电极和环形电极通过钼通孔电耦合。在一个实施例中，上电极耦合到DC电源以提供用于夹持衬底的静电力。在一个实施例中，上电极连接到射频源，用于将一种或多种处理气体激发到等离子体中进行基板处理。

2. 发明申请

WO2009117532A1 METHOD AND APPARATUS FOR CONTROLLING GAS INJECTION IN PROCESS CHAMBER 审中-公开
标题翻译：用于控制过程室中气体注入的方法和装置
公开(公告)号：WO2009117532A1
公开(公告)日：2009-09-24
申请号：PCT/US2009/037584
申请日：2009-03-18
申请人： APPLIED MATERIALS, INC. , PANAGOPOULOS, Theodoros , PATERSON, Alexander , HOLLAND, John, P. , KATZ, Dan , HAMMOND, Edward, P.
发明人： PANAGOPOULOS, Theodoros , PATERSON, Alexander , HOLLAND, John, P. , KATZ, Dan , HAMMOND, Edward, P.
IPC分类号： H01L21/205 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/45574 , H01J37/3244 , H01J37/32449
摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, a gas distribution apparatus may include a plurality of gas inlets configured to deliver a process gas to a process chamber; and a plurality of flow controllers having outlets coupled to the plurality of gas inlets for independently controlling the flow rate through each of the plurality of gas inlets. The gas distribution apparatus may be coupled to a process chamber for controlling the delivery of one or more process gases thereto.
摘要翻译：本文提供了处理衬底的方法和装置。在一些实施例中，气体分配设备可以包括多个气体入口，其构造成将处理气体输送到处理室; 以及多个流量控制器，其具有联接到所述多个气体入口的出口，用于独立地控制通过所述多个气体入口中的每一个的流量。气体分配装置可以联接到处理室，用于控制一种或多种处理气体的输送。

3. 发明申请

WO2003055287A3 PLASMA REACTOR WITH OVERHEAD RF ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION 审中-公开
公开(公告)号：WO2003055287A3
公开(公告)日：2003-07-03
申请号：PCT/US2002/030407
申请日：2002-09-25
申请人： APPLIED MATERIALS, INC.
发明人： HOFFMAN, Daniel, J. , YIN, Gerald, Zheyao , YE, Yan , KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , ZHAO, Xiaoye , CHIANG, Kang-Lie , HAGEN, Robert, B. , MILLER, Matthew, L.
IPC分类号： H01J37/32
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.

4. 发明申请

WO2003054913A3 GAS DISTRIBUTION PLATE ELECTRODE FOR A PLASMA REACTOR 审中-公开
公开(公告)号：WO2003054913A3
公开(公告)日：2003-07-03
申请号：PCT/US2002/039067
申请日：2002-12-05
申请人： APPLIED MATERIALS, INC.
发明人： KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , YE, Yan , HAGEN, Robert, B. , ZHAO, Xiaoye , KUMAR, Ananda, H. , CHIANG, Kang-Lie , NOORBAKHSH, Hamid , WANG, Shiang-Bau
IPC分类号： H01J37/32
摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

5. 发明申请

WO2008070181A2 MID-CHAMBER GAS DISTRIBUTION PLATE, TUNED PLASMA CONTROL GRID AND ELECTRODE 审中-公开
标题翻译：中间室气体分配板，调节的等离子体控制栅和电极
公开(公告)号：WO2008070181A2
公开(公告)日：2008-06-12
申请号：PCT/US2007/025090
申请日：2007-12-05
申请人： APPLIED MATERIALS, INC.
发明人： PATERSON, Alexander, M. , HOLLAND, John, P. , PANAGOPOULOS, Theodoros , HAMMOND, Edward, P., IV , HATCHER, Brian, K. , TODOROW, Valentin, N. , KATZ, Dan
IPC分类号： H05H1/34
CPC分类号： H01J37/32422 , H01J37/32091 , H01J37/321 , H01J37/32357 , H01J37/32449
摘要： A plasma reactor is provided for processing a workpiece such as a semiconductor wafer or a dielectric mask. The reactor chamber has a ceiling, a side wall and a workpiece support pedestal inside the chamber and facing the ceiling along an axis of symmetry and defining a chamber volume between the pedestal and the ceiling. An RF plasma source power applicator is provided at the ceiling. An in-situ electrode body inside the chamber lies divides the chamber into upper and lower chamber regions. The in-situ electrode comprises plural flow- through passages extending parallel to the axis and having different opening sizes, the passages being radially distributed by opening size in accordance with a desired radial distribution of gas flow resistance through the in-situ electrode body.
摘要翻译：提供用于处理诸如半导体晶片或介电掩模的工件的等离子体反应器。反应室在室内具有天花板，侧壁和工件支撑基座，并且沿着对称轴面向天花板并限定基座和天花板之间的室体积。在天花板上提供RF等离子源功率施加器。腔室内的原位电极体将腔室分成上腔室区域和下腔室区域。原位电极包括平行于轴线延伸并且具有不同开口尺寸的多个流通通道，通道根据通过原位电极体的气流阻力的期望径向分布通过开口尺寸径向分布。 / p>

6. 发明申请

WO2003055287A2 PLASMA REACTOR WITH OVERHEAD RF ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION 审中-公开
标题翻译：具有超声波射频电极的等离子体反应器被调谐到具有ARCING抑制的等离子体
公开(公告)号：WO2003055287A2
公开(公告)日：2003-07-03
申请号：PCT/US2002/030407
申请日：2002-09-25
申请人： APPLIED MATERIALS, INC.
发明人： HOFFMAN, Daniel, J. , YIN, Gerald, Zheyao , YE, Yan , KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , ZHAO, Xiaoye , CHIANG, Kang-Lie , HAGEN, Robert, B. , MILLER, Matthew, L.
IPC分类号： H05H1/00
CPC分类号： H01J37/32082 , H01J37/32183
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.
摘要翻译：一种用于处理半导体工件的等离子体反应器，包括具有室壁并包含用于保持半导体工件的工件支撑件的反应室，覆盖所述工件支撑件的顶部电极，包括所述室壁的一部分的电极，RF发电机用于将所述发电机的频率的功率提供给所述顶置电极并且能够将所述腔室内的等离子体保持在期望的等离子体离子密度水平。顶置电极具有电容，使得在所述室中以所述期望等离子体离子密度形成的所述架空电极和等离子体以电极 - 等离子体共振频率共振，所述发生器的所述频率至少接近所述电极 - 等离子体共振频率。反应器还包括形成在面向所述工件支撑件的所述顶置电极的表面上的绝缘层，所述RF发电机和所述架空电极之间的电容绝缘层，以及覆盖并接触所述顶部电极的表面的金属泡沫层，远离所述工件支撑件。

7. 发明申请

WO2009067104A1 PLASMA ETCH PROCESS FOR CONTROLLING LINE EDGE ROUGHNESS 审中-公开
标题翻译：用于控制线边缘粗糙度的等离子体蚀刻过程
公开(公告)号：WO2009067104A1
公开(公告)日：2009-05-28
申请号：PCT/US2007/025369
申请日：2007-12-11
申请人： APPLIED MATERIALS, INC.
发明人： BELEN, Rodolfo, P. , HAMMOND IV, Edward, P. , HATCHER, Brian, K. , KATZ, Dan , PANAGOPOULOS, Theodoros , PATERSON, Alexander, M. , TODOROW, Valentin, N.
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32165 , H01J37/32449 , H01L21/033
摘要： Line edge smoothness in a hardmask etch process is improved by widening the chamber pressure process window by applying VHF power and increasing the chamber pressure to near the maximum value of the widened process window.
摘要翻译：硬掩模蚀刻工艺中的线边缘平滑度通过使用VHF功率加宽腔室压力过程窗口并将腔室压力增加到接近加宽过程窗口的最大值来改善。

8. 发明申请

WO2003054913A2 GAS DISTRIBUTION PLATE ELECTRODE FOR A PLASMA REACTOR 审中-公开
标题翻译：用于等离子体反应器的气体分布板电极
公开(公告)号：WO2003054913A2
公开(公告)日：2003-07-03
申请号：PCT/US2002/039067
申请日：2002-12-05
申请人： APPLIED MATERIALS, INC.
发明人： KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , YE, Yan , HAGEN, Robert, B. , ZHAO, Xiaoye , KUMAR, Ananda, H. , CHIANG, Kang-Lie , NOORBAKHSH, Hamid , WANG, Shiang-Bau
IPC分类号： H01J37/32
CPC分类号： H01J37/3244
摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.
摘要翻译：本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管背板，后板和前板结合在一起并形成组件。组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径至少一个孔的流速。此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的，与孔对齐。

9. 发明申请

WO2003036680A1 MERIE PLASMA REACTOR WITH SHOWERHEAD RF ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION 审中-公开
标题翻译： MERIE等离子体反应器，带有SHOWERHEAD RF电极，被调谐到等离子体，具有防止抑制
公开(公告)号：WO2003036680A1
公开(公告)日：2003-05-01
申请号：PCT/US2002/030399
申请日：2002-09-24
申请人： APPLIED MATERIALS, INC.
发明人： HOFFMAN, Daniel, J. , YE, Yan , KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , ZHAO, Xiaoye , CHIANG, Kang-Lie , HAGEN, Robert, B. , MILLER, Matthew, L.
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32183 , H01J37/3266
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaing a plasma within the chamber at a desired plasma ion density level. The overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve circulating magnetic field which stirs the plasma to improve plasma on density districution uniformity.
摘要翻译：一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以发电机到顶置电极并且能够以期望的等离子体离子密度水平维持腔室内的等离子体。以期望的等离子体离子密度在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。反应器还包括一组围绕晶片表面的等离子体处理区域的MERIE磁体，其产生缓慢循环的磁场，其搅拌等离子体以改善循环磁场，其搅拌等离子体以改善等离子体的密度分布均匀性。

10. 发明申请

WO2003016591A1 PROCESS CHAMBER HAVING MULTIPLE GAS DISTRIBUTORS AND METHOD 审中-公开
标题翻译：具有多种气体分配器和方法的过程室
公开(公告)号：WO2003016591A1
公开(公告)日：2003-02-27
申请号：PCT/US2002/026172
申请日：2002-08-15
申请人： APPLIED MATERIALS, INC.
发明人： KHOLODENKO, Arnold, V. , KATZ, Dan , CHENG, Wing, L.
IPC分类号： C23C16/455
CPC分类号： C23C16/45519 , C23C16/455
摘要： A substrate processing chamber (110) has a substrate support (150) to support a substrate, and an exhaust conduit (162) about the substrate support. A first process gas distributor (142) directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor (144) directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer (170) energizes the first and second process gases in the chamber. A controller (133) operates the substrate support, gas flow meters, gas energizer, and throttle valve (164), to process the substrate in the energized gas.
摘要翻译：衬底处理室（110）具有用于支撑衬底的衬底支撑件（150）和围绕衬底支撑件的排气导管（162）。第一工艺气体分配器（142）以第一流量引导诸如非反应性气体的第一工艺气体，例如非反应性气体，并以第一流量引导排气管道，以形成围绕衬底的非反应性气体帘幕。第二工艺气体分配器（144）以比第一流量低的第二流量将第二工艺气体（例如反应性CVD或蚀刻剂气体）引向衬底的中心部分。气体激发器（170）激励腔室中的第一和第二处理气体。控制器（133）操作衬底支撑件，气体流量计，气体激励器和节流阀（164），以处理通电气体中的衬底。

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