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    • 8. 发明申请
    • BURIED INSULATOR ISOLATION FOR SOLAR CELL CONTACTS
    • 用于太阳能电池接触的绝缘绝缘体隔离
    • WO2009094575A2
    • 2009-07-30
    • PCT/US2009/031882
    • 2009-01-23
    • APPLIED MATERIALS, INC.
    • BORDEN, PeterXU, Li
    • H01L31/042H01L31/05
    • H01L31/062H01L31/022425Y02E10/50
    • The present invention relates to methods and apparatuses for providing a buried insulator isolation for solar cell contacts. According to certain aspects, the invention places a buried oxide under the emitter of a polysilicon emitter solar cell. The oxide provides an excellent passivation layer over most of the surface. Holes in the oxide provide contact areas, increasing the current density to enhance efficiency. The oxide isolates the contacts from the substrate, achieving the advantage of a selective emitter structure without requiring deep diffusions. The oxide further enables use of screen printing on advanced shallow emitter cells. Positioning of the grid lines close to the openings also enables use of a very thin emitter to maximize blue response.
    • 本发明涉及用于为太阳能电池触点提供掩埋绝缘体隔离的方法和设备。 根据某些方面,本发明将埋置氧化物置于多晶硅发射极太阳能电池的发射极下方。 氧化物在大部分表面上提供了优异的钝化层。 氧化物中的孔提供接触面积,增加电流密度以提高效率。 氧化物将触点与衬底隔离,实现了选择性发射极结构的优点而不需要深扩散。 氧化物进一步使得能够在先进的浅发射器单元上使用丝网印刷。 网格线靠近开口的位置也可以使用非常薄的发射器来最大化蓝色响应。
    • 10. 发明申请
    • SIMPLIFIED BACK CONTACT FOR POLYSILICON EMITTER SOLAR CELLS
    • 简单的背面接触多晶硅发射太阳能电池
    • WO2009126803A2
    • 2009-10-15
    • PCT/US2009/040063
    • 2009-04-09
    • APPLIED MATERIALS, INC.
    • BORDEN, Peter G.XU, Li
    • H01L31/042
    • H01L31/0682H01L31/022441H01L31/1804Y02E10/547Y02P70/521
    • The present invention relates to forming contacts for solar cells. According to one aspect, an interdigitated back contact (IBC) cell design according to the invention requires only one patterning step to form the interdigitated junctions (vs. two for alternate designs). According to another aspect, the back contact structure includes a silicon nitride or a nitrided tunnel dielectric. This acts as a diffusion barrier, so that the properties of the tunnel dielectric can be maintained during a high temperature process step, and boron diffusion through the tunnel dielectric can be prevented. According to another aspect, the process for forming the back contacts requires no deep drive-in diffusions.
    • 本发明涉及形成太阳能电池的触点。 根据一个方面,根据本发明的叉指式背接触(IBC)电池设计仅需要一个构图步骤来形成叉指结点(相对于替代设计的两个接合)。 根据另一方面,背接触结构包括氮化硅或氮化隧道电介质。 这充当扩散阻挡层,使得可以在高温工艺步骤期间保持隧道电介质的性质,并且可以防止通过隧道电介质的硼扩散。 根据另一方面,用于形成背部接触的方法不需要深度驱动扩散。