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1. 发明申请

WO2014035820A1 METHOD OF SILICON ETCH FOR TRENCH SIDEWALL SMOOTHING 审中-公开
标题翻译：用于固化平板玻璃的硅蚀刻方法
公开(公告)号：WO2014035820A1
公开(公告)日：2014-03-06
申请号：PCT/US2013/056382
申请日：2013-08-23
申请人： APPLIED MATERIALS, INC.
发明人： YU, Keven , KUMAR, Ajay
IPC分类号： H01L21/3065 , H01L21/31
CPC分类号： H01L21/3065 , B81C1/00619 , H01L21/30655 , H01L21/31138 , H01L21/76898
摘要： Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of the trench, the trench having a protective layer formed by plasma generated by a second process gas such as oxygen or a polymerization gas. In another embodiment, a method involves etching a semiconductor wafer to generate a trench having a smooth sidewall. The method includes plasma etching the semiconductor wafer with one or more first process gases including a fluorine gas, simultaneously performing deposition and plasma etching the semiconductor wafer with one or more second process gases including a fluorine gas and a polymerization gas mix, and performing deposition with one or more third process gases including a polymerization gas.
摘要翻译：描述了用于沟槽侧壁平滑化的硅蚀刻方法。在一个实施例中，一种方法包括通过等离子体蚀刻来平滑在半导体晶片中形成的沟槽的侧壁。该方法包括使用氟气产生的等离子体对半导体晶片进行定向蚀刻，以平滑沟槽的侧壁，该沟槽具有由诸如氧气或聚合气体的第二工艺气体产生的等离子体形成的保护层。在另一个实施例中，一种方法包括蚀刻半导体晶片以产生具有平滑侧壁的沟槽。该方法包括使用一种或多种包括氟气的第一工艺气体对半导体晶片进行等离子体蚀刻，同时用包含氟气和聚合气体混合物的一种或多种第二工艺气体进行沉积和等离子体蚀刻半导体晶片，并且一种或多种第三工艺气体，包括聚合气体。

2. 发明申请

WO2014085037A1 METHOD FOR ETCHING EUV MATERIAL LAYERS UTILIZED TO FORM A PHOTOMASK 审中-公开
标题翻译：用于蚀刻用于形成光电子的EUV材料层的方法
公开(公告)号：WO2014085037A1
公开(公告)日：2014-06-05
申请号：PCT/US2013/068462
申请日：2013-11-05
申请人： APPLIED MATERIALS, INC.
发明人： YU, Keven , CHANDRACHOOD, Madhavi , SABHARWAL, Amitabh , KUMAR, Ajay
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： G03F1/00 , G03F1/22 , G03F1/80
摘要： A method and apparatus for etching photomasks are provided herein. In one embodiment, a method of etching an ARC layer or an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having an ARC layer or an absorber layer partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas in to a processing chamber, applying a source RF power to form a plasma from the gas mixture, applying a first type of RF bias power to the substrate for a first period of time, applying a second type of RF bias power away from the substrate for a second period of time, and etching the ARC layer or the absorber layer through the patterned layer in the presence of the plasma.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，蚀刻设置在光掩模上的ARC层或吸收层的方法包括将膜堆叠转移到蚀刻室中，该膜堆具有通过图案化层局部暴露的ARC层或吸收层，提供气体将包含至少一种含氟气体的混合物加入到处理室中，施加源RF功率以从气体混合物形成等离子体，将第一类型的RF偏置功率施加到衬底上第一时间段，施加第二类型的RF偏置功率远离衬底持续第二段时间，并且在存在等离子体的情况下通过图案化层蚀刻ARC层或吸收层。

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